Dielectric relaxation property and barrier layer formation in CrNbO4 oxides

Substitution of La and Fe with Dy and Mn in multiferroic La1−xDyxFe1−yMnyO3 nanocrystallites

“…The relaxation time of polarized materials is very short (10 À 11 s). At higher frequencies the orientations cannot follow the alternating field and thus dielectric parameters become constants [14,[32][33].…”

Structure and high dielectric permittivity of Li0.01M0.05Ni0.94O (M=V and W) ceramics

“…Hsiao). material consisting of grains which become semiconducting while grain boundaries are insulating [9,10].…”

Structure and dielectric properties of sodium-doped Ba(FeNb)0.5O3

“…In addition, the curve warps upwards at high temperature due to the influence of leakage conductivity [16], which is produced by a migration of Na + or oxygen vacancies at a high temperature. This phenomenon may be caused by the interfacial orientation and space charge polarizations effect [14,17], leading the dielectric constant to increase at high temperature. These dipoles may change their orientation due to the jumping of oxygen ions through vacant oxygen sites.…”