Dielectric response and transport properties of silicon films nano-textured by random voids

Salem, Mohamed Shaker; Naser, Gamal Madboly; El-Gamal, A.A.

doi:10.1007/s10854-020-04511-3

Cited by 4 publications

(4 citation statements)

References 63 publications

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“…However, the semiconducting nature of the film matrix is evident from the reduced intensity of the relaxation peak at elevated temperatures and its corresponding shift toward the higher frequency, as for the higher T S cases. From the Z Im versus log( f) plot, the relaxation time (τ) is determined using the following equation 53 1 2 f max = (7) where f max is the relaxation frequency where Z Im attains the peak magnitude. The ln(τ) versus the inverse of temperature plotted in Figure 6d identifies a linear distribution of data points following the Arrhenius law.…”

Section: Resultsmentioning

confidence: 99%

Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiO_xC_y:H) Films at the Amorphous-to-Nanocrystalline Transition Zone

Shyam

Das

2022

ACS Appl. Electron. Mater.

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The impedance characteristics and ac conductivity behavior of the silicon oxy-carbide (SiO x C y :H) network have been investigated during its transition from an amorphous dominated to a crystalline populated structure, grown by varying only the growth temperature (T S) from 160 to 180 °C. At elevated T S, the Si nanocrystals (Si-ncs) increased in size and number density, with corresponding elevation in crystallinity from 28 to 45%. Two distinct dielectric relaxations for the individual a-SiO x C y :H and nc-Si components were identified in the low-frequency and high-frequency zones, respectively, for the film deposited at higher T S (180 °C). In contrast, for the lower T S (160 °C)-grown film, a significant fraction of the ultra-nanocrystalline (unc-Si) component contributed only one consolidated relaxation peak at a moderate frequency. The scaling measurements of the imaginary part of impedance (−Z Im) revealed two distinct physical events for a-SiO x C y :H and nc-Si, both being temperature scale-independent. The activation energy of relaxation is low for the ordered nc-Si component and high for the disordered a-SiO x C y :H matrix. According to the Bode plot analysis, the presence of several defects in the grain boundary contributed a poor carrier lifetime to the nc-Si component, while the a-SiO x C y :H matrix with lesser defects had a longer carrier lifetime. An equivalent circuit model formed by parallel resistors and constant phase elements (R||CPE), following Nyquist plot analysis, demonstrated an intense association between the microstructural and charge carrier characteristics. The temperature-dependent ac-conductivity behavior of the mixed-phase material is well explained by the nonoverlapping small polaron tunneling model, at two individual stages across a transition from an amorphous to crystalline configuration around a small span of growth temperature.

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Section: Resultsmentioning

confidence: 99%

Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiO_xC_y:H) Films at the Amorphous-to-Nanocrystalline Transition Zone

Shyam

Das

2022

ACS Appl. Electron. Mater.

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“…In this case, it consists of a bi-layer of Silicon Nitride (Si3N4) and Silicon-Rich-Silicon Dioxide (SRO), with an aluminum gate as top-contact, and a p-type degenerately doped silicon well. The mechanisms by which this device emits light and its current-voltage relationship are still under investigation [14]. Some models of charge transport used to describe the relationship between the applied electric field and the current density of thin dielectric materials, as occurs in the LEC, are Fowler-Nordheim (FN) (1), Poole-Frenkel (PF) (2), and Trapassisted Tunneling (TAT) (3) [15].…”

Section: A Light Emitting Capacitor (Lec)mentioning

confidence: 99%

“…To increase the voltage, a 3-stage, 4-phase Dickson charge pump was designed as described in [14]; this configuration uses pass transistors instead of diodes, which is typical in conventional 2-phase Dickson charge pump configurations [20].…”

Section: Cmos Circuitry and Electrophotonic Simulationsmentioning

confidence: 99%

Verilog-A Modeling of an Electrophotonic Emitter-Waveguide-Detector (EWD) System Compatible with Standard CMOS Technology

Orozco Coy,

Gonzalez-Diaz,

Aceves-Mijares

et al. 2024

IEEE Latin Am. Trans.

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Lab-On-A-Chip (LOC) devices that utilize lightbased detection principles offer advantages compared with their electronic counterparts, such as higher sensitivity and not necessarily needing markers, simplifying their use, and reducing reagent consumption. Recently, the development of Si-based light emitters compatible with standard CMOS manufacturing processes has overcome one of the main obstacles in creating fully integrated electrophotonic systems on the same substrate. This groundbreaking achievement means the possibility of integrating photonic and driving circuitry in the same chip. However, due to its extreme novelty and specific electronic requirements, new design solutions must be tailored to further aid fulfilling the promise of a fully integrated electrophotonic system. The lack of existing circuit design models and tools hinders the advancement of this technology. To aid further in designing these systems, this article presents the development of a Verilog-A macromodel for an electrophotonic circuit composed of a Light Emitting Capacitor (LEC), a waveguide, and a sensor. The system was simulated in the Cadence Virtuoso environment, and a use case exhibits the system simulation including a CMOS circuit for emitter excitation and sensor reading.

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“…[1][2][3] In semiconductor materials nanovoids have very important effects in electrical, optical, mechanical, thermal, and chemical properties. [4][5][6][7][8][9] For III-N semiconductors, electrochemical etching for the formation of porous structures has been used for the lift-off of GaN from sapphire substrates. [10][11][12] Lift-off of GaN is very important for applications in electronic and optical devices, therefore a variety of methods have been recently proposed.…”

mentioning

confidence: 99%

Control of the formation of self-assembled nano-voids at the GaN/GaAs interface

Perez-Hernandez

Zambrano-Serrano

Gallardo-Hernández

et al. 2021

Appl. Phys. Express

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The self-assembling of nanovoids with a precisely controlled depth at the GaN/GaAs interface is reported and their formation mechanism discussed. During the very early stages of GaN growth by molecular beam epitaxy over GaAs(100) misoriented substrates, nano-pits are formed by chemical reactions of gallium and nitrogen with a GaAs sacrificial layer. The GaAs sacrificial layer is grown on top of a GaAs/AlGaAs superlattice that is used to efficiently stop the in-depth etch and to promote lateral etching. Thus, a nanostructure of wide voids and pedestals is self-assembled and confined at the interface. As an application, the lift-off of GaN epilayers from the substrate was carried out successfully, a fact that opens up the applicability of this process in other semiconductor systems.

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Dielectric response and transport properties of silicon films nano-textured by random voids

Cited by 4 publications

References 63 publications

Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiO_xC_y:H) Films at the Amorphous-to-Nanocrystalline Transition Zone

Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiO_xC_y:H) Films at the Amorphous-to-Nanocrystalline Transition Zone

Verilog-A Modeling of an Electrophotonic Emitter-Waveguide-Detector (EWD) System Compatible with Standard CMOS Technology

Control of the formation of self-assembled nano-voids at the GaN/GaAs interface

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Dielectric response and transport properties of silicon films nano-textured by random voids

Cited by 4 publications

References 63 publications

Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiOxCy:H) Films at the Amorphous-to-Nanocrystalline Transition Zone

Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiOxCy:H) Films at the Amorphous-to-Nanocrystalline Transition Zone

Verilog-A Modeling of an Electrophotonic Emitter-Waveguide-Detector (EWD) System Compatible with Standard CMOS Technology

Control of the formation of self-assembled nano-voids at the GaN/GaAs interface

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Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiO_xC_y:H) Films at the Amorphous-to-Nanocrystalline Transition Zone

Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiO_xC_y:H) Films at the Amorphous-to-Nanocrystalline Transition Zone