Dielectric strength of Al<sub>2</sub>O<sub>3</sub>/silicone composites after high‐temperature aging

Yao, Yiying; Chen, Zheng; Lü, Gongxuan; Boroyevich, Dushan; Ngo, Khai D. T.

doi:10.1002/app.41170

Cited by 7 publications

(3 citation statements)

References 23 publications

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“…The n-AlN fillers have a comparable length-scale level with the long molecular segment in the SE matrix and large specific surface areas due to the small size effect [45], leading to better filler/matrix interfacial compatibility and fewer interfacial defects compared with the m-SiC fillers. Furthermore, the O atoms in the Si-O-Si backbone and the hydroxyls at the one end of the silicone chains easily form hydrogen bonds with the sufficient hydroxyls on the surface of the n-AlN fillers [46], as shown in figures 16(b) and (c), respectively, forming a large number of anchoring sites and resulting in the Si-O vibration peak strengthening. Moreover, these anchoring sites formed by the hydrogen bonds perform a similar function as the crosslinking sites of the matrix molecular chains, improving the crosslinking degree, thermal and mechanical properties of S20N3, compared with S20.…”

Section: Effect Of N-aln Fillers On Matrix Molecular Chainsmentioning

confidence: 99%

Enhanced field-dependent conductivity and material properties of nano-AlN/micro-SiC/silicone elastomer hybrid composites for electric stress mitigation in high-voltage power modules

et al. 2022

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This paper reports an enhancement of the nonlinear conductivity, thermal and mechanical properties of micro-silicon carbide/silicone elastomer (m-SiC/SE) composites by adding nano-aluminum nitride (n-AlN) for power module encapsulation applications. The electrical properties (such as nonlinear conductivity characteristics and transient permittivity obtained from polarization current, and trap distributions obtained from thermally stimulated depolarization current) and material properties (including thermo-gravimetric analysis, coefficient of thermal expansion, and thermal conductivity, tensile strength, strain at break and Young’s modulus) of the pure SE, m-SiC/SE microcomposites, m-SiC/n-AlN/SE hybrid composites are investigated. The effect of the m-SiC fillers and n-AlN fillers on physicochemical properties of the SE matrix is analyzed by FT-IR spectroscopy and crosslinking degree. The measured nonlinear conductivity and transient permittivity are used for electric field simulation under DC stationary and square voltages. It is found that the addition of n-AlN fillers in the SE hybrid composite improves the nonlinear conductivity characteristics and mitigates the electric field under DC stationary and square voltages, compared to the SE microcomposite. Furthermore, the m-SiC/n-AlN/SE hybrid composite has a higher thermal degradation temperature, thermal conductivity, tensile strength, Young’s modulus, and crosslinking degree than the SE microcomposite, whereas their CTE and strain at break are lower. It is elucidated that the m-SiC/n-AlN/SE hybrid composite with enhanced nonlinear conductivity and material properties is a promising packaging material for high-voltage power modules.

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Section: Effect Of N-aln Fillers On Matrix Molecular Chainsmentioning

confidence: 99%

Enhanced field-dependent conductivity and material properties of nano-AlN/micro-SiC/silicone elastomer hybrid composites for electric stress mitigation in high-voltage power modules

et al. 2022

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“…In Table 2. Critical properties for encapsulation [195,196] addition, these high temperatures result in thermomechanical stresses which can cause cracking and in turn a loss of mechanical and dielectric strength [194,195]. The majority of commercial encapsulants also have a low k T , which if improved upon could alleviate some induced thermal stress and strains.…”

Section: Encapsulantmentioning

confidence: 99%

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Qin

Albano

Spencer

et al. 2023

J. Phys. D: Appl. Phys.

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Power semiconductor device is a fundamental driver for advancement in power electronics, the technology for electric energy conversion. Power devices based on wide-bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors allow for smaller chip size, lower loss and higher frequency as compared to the silicon (Si) counterpart, thus enabling a higher system efficiency and smaller form factor. Amongst the challenges for the development and deployment of WBG and UWBG devices is the efficient dissipation of heat, an unavoidable by-product of the higher power density. To mitigate the performance limitations and reliability issues caused by self-heating, thermal management is required at both device and package levels. Particularly, packaging is a crucial milestone for the development of any power device technology; WBG and UWBG devices have both reached this milestone recently. This paper provides a timely review on the thermal management of WBG and UWBG power devices with an emphasis on the packaged devices. Additionally, emerging UWBG devices hold good promise for high-temperature applications due to the low intrinsic carrier density and the increased dopant ionization at elevated temperatures. The fulfillment of this promise in system applications, in conjunction with overcoming the thermal limitations of some UWBG materials, require new thermal management and packaging technologies. To this end, we provide perspectives on the relevant challenges, potential solutions and research opportunities, highlighting the pressing needs for the device-package, electro-thermal co-design and the high-temperature packages that can withstand the high electric field expected in UWBG devices.

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“…This requires higher temperature resistance and better insulation performance of encapsulated insulation materials. Silicone elastomer, as one of the insulating materials, has been applied to the design and actual packaging of SiC power devices due to its good electrical insulation performance, high temperature resistance, elasticity, and viscosity [3,4]. Figure 1 shows the application of silicon elastomers in a SiC device packaging design.…”

Section: Introductionmentioning

confidence: 99%

Space charge characteristics of silicone elastomer for device packaging under positive square wave voltage

Zhang

Zhao

et al. 2022

High Voltage

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With the rapid development of power electronic devices towards high voltage and power, the insulation challenges faced by devices have attracted widespread attention. Silicone elastomer is widely used in device packaging as one insulating material, and the study of its insulating properties is helpful to the reliable operation of devices. To this end we obtained the space charge characteristics of silicone elastomer under positive square wave voltage by using the pulse-electroacoustic (PEA) method. Firstly based on the existing research and IEC standards, the selection criteria of the resistance and capacitance parameters of a PEA system for space charge measurement under square wave voltage are given. Through this experimental system, the space charge distribution under the positive square wave voltage with different waveform parameters is obtained, and the influences of the waveform parameters on the space charge accumulation are analysed. The amounts of charges under the action of square wave voltage with different waveform parameters are calculated, and the influences of waveform parameters on the amounts of charges are analysed. In addition, the reasons for the difference in the accumulation of positive and negative charges are explained through Schottky injection model, the synthesis reaction and the infrared spectrum of the silicone elastomer.

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Dielectric strength of Al₂O₃/silicone composites after high‐temperature aging

Cited by 7 publications

References 23 publications

Enhanced field-dependent conductivity and material properties of nano-AlN/micro-SiC/silicone elastomer hybrid composites for electric stress mitigation in high-voltage power modules

Enhanced field-dependent conductivity and material properties of nano-AlN/micro-SiC/silicone elastomer hybrid composites for electric stress mitigation in high-voltage power modules

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Space charge characteristics of silicone elastomer for device packaging under positive square wave voltage

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Dielectric strength of Al2O3/silicone composites after high‐temperature aging

Cited by 7 publications

References 23 publications

Enhanced field-dependent conductivity and material properties of nano-AlN/micro-SiC/silicone elastomer hybrid composites for electric stress mitigation in high-voltage power modules

Enhanced field-dependent conductivity and material properties of nano-AlN/micro-SiC/silicone elastomer hybrid composites for electric stress mitigation in high-voltage power modules

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Space charge characteristics of silicone elastomer for device packaging under positive square wave voltage

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Dielectric strength of Al₂O₃/silicone composites after high‐temperature aging