2011
DOI: 10.1016/j.snb.2011.09.074
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Dielectrically stabilized electrowetting on AF1600/Si3N4/TiO2 dielectric composite film

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Cited by 34 publications
(21 citation statements)
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“…Secondly, when DC voltage was applied, the CAs show less fluctuation than those under +DC voltage, indicating the reversibility of electrowetting on CEP by -DC is better than that under +DC voltage. Moreover, in short-term test, the CEP-based EWOD platform exhibited a good CA recovery with a hysteresis of less than 2 when under -DC voltage, this make CEP as an excellent candidate for dielectric material in the EWOD device [9] . In the long-term, as to be pointed out, the tiny decrease of initial CA and increase of active CA under voltage are mainly due to the evaporation of droplet, which can be prevented in practical EWOD devices.…”
Section: Methodsmentioning
confidence: 86%
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“…Secondly, when DC voltage was applied, the CAs show less fluctuation than those under +DC voltage, indicating the reversibility of electrowetting on CEP by -DC is better than that under +DC voltage. Moreover, in short-term test, the CEP-based EWOD platform exhibited a good CA recovery with a hysteresis of less than 2 when under -DC voltage, this make CEP as an excellent candidate for dielectric material in the EWOD device [9] . In the long-term, as to be pointed out, the tiny decrease of initial CA and increase of active CA under voltage are mainly due to the evaporation of droplet, which can be prevented in practical EWOD devices.…”
Section: Methodsmentioning
confidence: 86%
“…Therefore, an appropriate dielectric material layer with high dielectric strength and small thickness should be used to get high capacitance in EWOD device, which would lower the actuation voltage for commercial point of care microsystems. Indeed, many researches focusing on the fabrication and evaluation of high performance material have been reported to reduce the drive voltage of EWOD devices, such as barium strontium titanate (BST) through metal organic chemical vapor deposition (MOCVD) process [8] , Si3N4 through plasma-enhanced chemical vapor deposition (PECVD) process [9] , Al2O3 deposited by atomic layer deposition (ALD) [10] and Ta2O5 form by Sputtered-Anodized process [11] . Although those dielectric materials can reduce the drive voltage in an impressive range, they generally need rigorous and complex fabrication process.…”
Section: Introductionmentioning
confidence: 99%
“…27 Lee and Kong used a multi-layered dielectric layer composed of amorphous fluoropolymer (AF1600), Si 3 N 4 , and titania (TiO 2 ) to enhance the dielectric quality. 15 deposited on the SiO 2 , Si 3 N 4 , and parylene C films as the composite dielectrics. 17 The liquid SOG can effectively fill the pinholes on the dielectric film to reduce dielectric breakdown.…”
Section: Proposed Ewod System For Biomedical Applicationsmentioning
confidence: 99%
“…For example, Lee and Kong used a multi-layered dielectric layer composed of amorphous fluoropolymer (AF1600), Si 3 N 4 , and titania (TiO 2 ) to enhance the dielectric quality. 15 Tanu and Cheng used graphene as an electrode material for a decreased leakage current and diminished electrolysis. 16 Our research team has also increased the stability of EWOD devices for the manipulation of biomedical droplets with spin-on glass (SOG) and Si 3 N 4 films as the composite dielectric.…”
Section: Introductionmentioning
confidence: 99%
“…12 Electro-wetting can be used to force displacement of the liquid across adjacent layers. 17 Hygrochromic coatings (deposited on glass substrate) consisting of Bragg stacks (N ¼ 3 bilayers) of mesoporous oxides (L 1 layers: xTiO 2 (1 -x)Al 2 O 3 , L 2 layers: SiO 2 ) were fabricated by a modified sol-gel method according a procedure described previously. 13 The molar ratio x of mixed oxide layers was adjusted in order to fulfill the transparency condition in dry conditions (empty pores in all layers) with available porogen agents.…”
mentioning
confidence: 99%