2021
DOI: 10.1016/j.surfin.2021.101531
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Dielectrophoretic alignment and electrical characterization of CuO nanowire-based systems

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Cited by 2 publications
(3 citation statements)
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“…The average diameters of the individual CuO nanowires, determined from the SEM images, were 50–100 nm, and their lengths varied between 2 and 20 µm ( Figure 1a ). To optimize the dielectrophoretic alignment of nanowires of such lengths and to maximize the number of the nanowire interconnects, the distance between the metallic microelectrodes was varied from 2 to 8 µm [ 26 ]. The arrays of microelectrode pairs with different gap distances were grouped in four rows on a chip ( Figure 1b ).…”
Section: Resultsmentioning
confidence: 99%
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“…The average diameters of the individual CuO nanowires, determined from the SEM images, were 50–100 nm, and their lengths varied between 2 and 20 µm ( Figure 1a ). To optimize the dielectrophoretic alignment of nanowires of such lengths and to maximize the number of the nanowire interconnects, the distance between the metallic microelectrodes was varied from 2 to 8 µm [ 26 ]. The arrays of microelectrode pairs with different gap distances were grouped in four rows on a chip ( Figure 1b ).…”
Section: Resultsmentioning
confidence: 99%
“…These nanowires were assembled on arrays of Cr/Au (3/60 nm) microelectrodes lithographically pre-patterned on a commercially available Si/SiO 2 wafer substrate (MTI Corporation) diced in 10 × 10 mm 2 chips. To assemble the nanowires by dielectrophoresis, the chip was submerged in a suspension of the nanowires in IPA, and an AC voltage (5 V peak to peak, 5–50 kHz) was applied between the microelectrodes for 20 min [ 26 ]. Nanowires and microelectrodes were examined by scanning electron microscopy (SEM, Hitachi S4800) and atomic force microscopy (AFM, Asylum Research MFP-3D).…”
Section: Methodsmentioning
confidence: 99%
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