Dielectrophoretically aligned GaN nanowire rectifiers

Lee, S.-Y.; Kim, Tae-Hwan; Suh, Duk-Il; Suh, Eun‐Kyung; Cho, N.-K.; Seong, Woo

doi:10.1007/s00339-007-3890-3

Cited by 13 publications

(7 citation statements)

References 10 publications

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“…[13][14][15][16] The DAAD method for heterojunction GaN:Mn NWs structures was performed at a frequency of 5 kHz with 5 V p-p , an optimum condition for GaN:Mn NW suspensions with IPA. 8,12 As shown in Fig. 3a and b, the GaN:Mn NWs were well aligned near the edge of the outer electrodes.…”

Section: Methodsmentioning

confidence: 86%

“…To assemble the dispersed NWs on Si substrates and to maximize the device performance with high driving current, the DAAD method represents an interesting approach to address the alignment difficulty. [8][9][10][11][12] Recently, we improved the DAAD method and demonstrated that this technique can readily be used to deposit semiconductor NWs on a selected area and position by controlling the applied frequency and the electric field to the electrodes. 3,12 A similar assembly approach has been published elsewhere.…”

Section: Methodsmentioning

confidence: 99%

“…[8][9][10][11][12] Recently, we improved the DAAD method and demonstrated that this technique can readily be used to deposit semiconductor NWs on a selected area and position by controlling the applied frequency and the electric field to the electrodes. 3,12 A similar assembly approach has been published elsewhere. [13][14][15][16] The DAAD method for heterojunction GaN:Mn NWs structures was performed at a frequency of 5 kHz with 5 V p-p , an optimum condition for GaN:Mn NW suspensions with IPA.…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/n-Si)

Kim

Jang

Seong

et al. 2009

Journal of Elec Materi

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We demonstrated that manganese (Mn)-doped GaN nanowires (NWs) exhibit p-type characteristics using current-voltage (I-V) characteristics in both heterojunction p-n structures (GaN:Mn NWs/n-Si substrate) and p-p structures (GaN:Mn NWs/p-Si). The heterojunction p-n diodes were formed by the coupling of the Mn-doped GaN NWs with an n-Si substrate by means of an alternating current (AC) dielectrophoresis-assisted assembly deposition technique. The GaN:Mn NWs/n-Si diode showed a clear current-rectifying behavior with a forward voltage drop of 2.4 V to 2.8 V, an ideality factor of 30 to 37, and a parasitic resistance in the range of 93 kX to 130 kX. On the other hand, we observed that other heterojunction structures (GaN:Mn NWs/p-Si) showed no rectifying behaviors as seen in p-p junction structures.

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Section: Methodsmentioning

confidence: 86%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/n-Si)

Kim

Jang

Seong

et al. 2009

Journal of Elec Materi

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“…In order to realize an advanced interconnection and facilitate electrical contact between the nanorod LEDs and the metal electrodes, electrochemical deposition of Au was performed on top of the electrode and contact points between the nanorods and the electrodes. Rapid thermal annealing (RTA) was subsequently performed at 810 °C for 120 s in ambient N 2 (See more details about electrochemical deposition and RTA processes in Supplementary Information 2–3)4950.…”

Section: Resultsmentioning

confidence: 99%

Horizontally assembled green InGaN nanorod LEDs: scalable polarized surface emitting LEDs using electric-field assisted assembly

Park

Yoon

et al. 2016

Sci Rep

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In this study, we report the concerted fabrication process, which is easy to transform the size of active emitting area and produce polarized surface light, using the electric-field-assisted assembly for horizontally assembled many tiny nanorod LEDs between two metal electrodes. We fabricate the millions of individually separated 1D nanorod LEDs from 2D nanorod arrays using nanosphere lithography, etching and cutting process of InGaN/GaN LED structure on a flat sapphire substrate. The horizontally assembled InGaN-based nanorods LED device shows bright (~2,130 cd/m2) and uniform polarized (polarization ratio, ρ = ~0.61) green emissions from large area (0.7 cm × 0.6 cm) planar surface. The realization of a horizontally assembled nanorod LED device can prove the concept of an innovative idea to fabricate formable and scalable polarized surface LED lighting.

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“…To improve the effectiveness of manipulation, most of the experiments were performed on nanomaterials suspended in fluids. Techniques based on Langmuir-Blodgett film formation [3], microfluidic flow [4], electric [5] and magnetic [6] fields, dielectrophoresis [7], and optical tweezers [8] have been explored. Among all these methods, magnetic manipulation provides a cost-effective, non-contact, and versatile approach to control nanostructured materials in fluids over a large area.…”

Section: Introductionmentioning

confidence: 99%

Polymer Composites with Oriented Magnetic Nanowires as Fillers

Sun

Keshoju

2007

MRS Proc.

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Metallic nickel nanowires with excellent physical properties have been introduced into polydimethylsiloxane (PDMS) matrix to form polymer nanocomposites. Nanowires were synthesized by template-assisted electrochemical deposition. By utilizing ferromagnetic nickel nanowires, small external magnetic field can be used to control their alignment and distribution during composite synthesis. Unlike dielectrophoresis, optical tweezers, and microfluidic flow control, magnetic manipulation provides a cost-effective, non-contact, and versatile approach to control nanostructured materials in fluids over a large area. Polydimethylsiloxane composites with nanowires arranged in longitudinal, transverse, and random orientations with respect to the applied load direction were studied. Tensile tests showed that the composites with longitudinal arrangement have higher elastic modulus and tensile strength than the other composite samples. Experimentally obtained elastic modulus values were compared with the prediction of classical Halpin-Tsai model.

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Dielectrophoretically aligned GaN nanowire rectifiers

Cited by 13 publications

References 10 publications

Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/n-Si)

Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/n-Si)

Horizontally assembled green InGaN nanorod LEDs: scalable polarized surface emitting LEDs using electric-field assisted assembly

Polymer Composites with Oriented Magnetic Nanowires as Fillers

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