2005
DOI: 10.1016/j.susc.2005.06.077
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DIET in highly charged ion interaction with silicon surfaces

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Cited by 6 publications
(2 citation statements)
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“…When a highly charged ion interacts with a solid surface, it releases its huge potential energy on a small area of a few tens of square nanometers in a short of time 10 fs. As a result, it causes remarkable effects, such as a high yield of secondary particle emission [2][3][4], and formation of hillock or crater nanostructures whose morphology and sizes strongly depend on the ion charge and the materials to be exposed [5][6][7][8][9]. The mechanism of ion guiding inside an insulating capillary is explained tentatively as self-organized formation of patches of charged areas, which reflect succeeding ions and just allow them to pass through [10,11].…”
Section: Introductionmentioning
confidence: 99%
“…When a highly charged ion interacts with a solid surface, it releases its huge potential energy on a small area of a few tens of square nanometers in a short of time 10 fs. As a result, it causes remarkable effects, such as a high yield of secondary particle emission [2][3][4], and formation of hillock or crater nanostructures whose morphology and sizes strongly depend on the ion charge and the materials to be exposed [5][6][7][8][9]. The mechanism of ion guiding inside an insulating capillary is explained tentatively as self-organized formation of patches of charged areas, which reflect succeeding ions and just allow them to pass through [10,11].…”
Section: Introductionmentioning
confidence: 99%
“…As a consequence of energy transfer between HCI and surface as described before, secondary particles are released from the impact site of single HCI. Compared to the case for the irradiation with singly charged ion, yield of secondary particle is considerably high, and proton yield increases as the 5th power of charge state for the surface of hydrogen terminated Si [13]. Although sputtering yield and penetration depth would depend on the kinetic energy, emission intensity itself did not depend on the kinetic energy [11].…”
Section: Fig 3 Ccd Image Of Emitted Light When the Mocvd Film Of Ermentioning
confidence: 83%