Difference Between Atomic Layer Deposition TiAl and Physical Vapor Deposition TiAl in Threshold Voltage Tuning for Metal Gated NMOSFETs

Li, Zhao-Yang; Wang, Xuejiao; Cai, Han-Lun; Yan, Zhao-Zhang; Jiang, Yu-Long; Wan, Jing

doi:10.1109/led.2021.3124801

IEEE Electron Device Lett.

2021

DOI: 10.1109/led.2021.3124801

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Difference Between Atomic Layer Deposition TiAl and Physical Vapor Deposition TiAl in Threshold Voltage Tuning for Metal Gated NMOSFETs

Zhao-Yang Li

Xuejiao Wang

Han-Lun Cai

et al.

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Cited by 8 publications

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Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration

Choi,

Sim,

Kim

et al. 2024

Materials Science in Semiconductor Processing

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Difference Between Atomic Layer Deposition TiAl and Physical Vapor Deposition TiAl in Threshold Voltage Tuning for Metal Gated NMOSFETs

Cited by 8 publications

References 19 publications

Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration

Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration

A machine learning framework for predicting physical properties in configuration space of gate alloys

Influence of Capping Layer on Threshold Voltage for HKMG FinFET With Short Channel

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