Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films

Xu, Feifan; Shen, Bo; Lü, Lin; Miao, Zhenlin; Song, Jiafang; Yang, Zhigang; Zhang, G. Y.; Hao, Xiaojian; Wang, Boyu; Shen, Xu–Qiang; Okumura, Hajime

doi:10.1063/1.3294965

Cited by 46 publications

(32 citation statements)

References 28 publications

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“…Ga-polar GaN might suffer from Ga-vacancies and higher C incorporation, which increases yellow defect luminesecence. [30][31][32] It is concluded that the yellow luminescence is further suppressed if single N-polarity can be achieved.…”

Section: Optical Properties Of Gan Nrsmentioning

confidence: 99%

Controlling morphology and optical properties of self-catalyzed, mask-free GaN rods and nanorods by metal-organic vapor phase epitaxy

Tessarek

Bashouti

Heilmann

et al. 2013

Journal of Applied Physics

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Ductile relaxation in cracked metal-organic chemical-vapor-deposition-grownA simple self-catalyzed and mask-free approach will be presented to grow GaN rods and nanorods based on the metal-organic vapor phase epitaxy technique. The growth parameter dependent adjustment of the morphology of the structures will be discussed. Rods and nanorods with diameters reaching from a few lm down to 100 nm, heights up to 48 lm, and densities up to 8Á10 7 cm -2 are all vertically aligned with respect to the sample surface and exhibiting a hexagonal shape with smooth sidewall facets. Optical properties of GaN nanorods were determined using cathodoluminescence. It will be shown that the optical properties can be improved just by reducing the Ga precursor flow. Furthermore, for regular hexagonal shaped rods and nanorods, whispering gallery modes with quality factors up to 500 were observed by cathodoluminescence pointing out high morphological quality of the structures. Structural investigations using transmission electron microscopy show that larger GaN nanorods (diameter > 500 nm) contain threading dislocations in the bottom part and vertical inversion domain boundaries, which separate a Ga-polar core from a N-polar shell. In contrast, small GaN nanorods ($200 nm) are largely free of such extended defects. Finally, evidence for a self-catalyzed, Ga-induced vapor-liquid-solid growth will be discussed. V C 2013 AIP Publishing LLC. [http://dx

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Section: Optical Properties Of Gan Nrsmentioning

confidence: 99%

Controlling morphology and optical properties of self-catalyzed, mask-free GaN rods and nanorods by metal-organic vapor phase epitaxy

Tessarek

Bashouti

Heilmann

et al. 2013

Journal of Applied Physics

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“…In another paper [17], the anticorrelation between the YL intensity and the concentration of the V Ga -containing defects was observed for three high-resistivity GaN samples. Xu et al [55] noticed that in GaN samples with undetectable amount of Ga vacancies, the YL intensity was significantly higher than that in GaN samples containing V Ga with the concentration of ∼10 17 cm −3 . Suihkonen et al [56] also noted that the YL band in GaN is not related to Ga vacancies because no increase of the YL intensity with increasing concentration of V Ga was observed.…”

Section: Comparison Of Theory and Experimentsmentioning

confidence: 99%

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

et al. 2014

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In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow luminescence (YL) band gives way to a green luminescence (GL) band at high excitation intensity. We propose that the GL band with a maximum at 2.4 eV is caused by transitions of electrons from the conduction band to the 0/+ level of the isolated C N defect. The YL band, related to transitions via the −/0 level of the same defect, has a maximum at 2.1 eV and can be observed only for some high-purity samples. However, in less pure GaN samples, where no GL band is observed, another YL band with a maximum at 2.2 eV dominates the photoluminescence spectrum. The latter is attributed to the C N O N complex.

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“…3(c)). The yellow luminescence is caused by native defects such as vacancies, anti-sites and interstitials [24,25]. The very weak YL suggested that there is a low density of point defect in the grown samples.…”

Section: Resultsmentioning

confidence: 97%

Influence of GaCl carrier gas flow rate on properties of GaN films grown by hydride vapor-phase epitaxy

Shao

Zhang

et al. 2011

Journal of Alloys and Compounds

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Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films

Cited by 46 publications

References 28 publications

Controlling morphology and optical properties of self-catalyzed, mask-free GaN rods and nanorods by metal-organic vapor phase epitaxy

Controlling morphology and optical properties of self-catalyzed, mask-free GaN rods and nanorods by metal-organic vapor phase epitaxy

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

Influence of GaCl carrier gas flow rate on properties of GaN films grown by hydride vapor-phase epitaxy

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