Different temperature dependence of carrier transport properties between Al _x Ga _{1– x} N/In _y Ga _{1– y}

Abstract

The temperature dependence of carrier transport properties of AlxGa 1−x N/InyGa 1−y N/GaN and AlxGa 1−x N/GaN heterostructures has been investigated.It is shown that the Hall mobility in Al 0.25 Ga 0.75 N/In 0.03 Ga 0.97 N/GaN heterostructures is higher than that in Al 0.25 Ga 0.75 N/GaN heterostructures at temperatures above 500 K, even the mobility in the former is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Al 0.25 Ga 0.75 N/In 0.03 Ga 0.97 N/GaN heterostructures decreases slightly, whereas the electron sheet density in Al 0.25 Ga 0.75 N/GaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa 1−y N/GaN heterointerface induced by the compressive strain in the InyGa 1−y N channel, which effectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.

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