Differential Aging Sensor to Detect Recycled ICs using Sub-threshold Leakage Current

Alnuayri, Turki; Khursheed, Saqib; Martinez, Antonio Leonel Hernandez; Rossi, Daniele

doi:10.23919/date51398.2021.9473975

Cited by 6 publications

(3 citation statements)

References 14 publications

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“…We combined the N-CDIR aging sensor approach of stressing the SRO and relaxing the RRO during normal operation in [11] and the approach of using the aging sensor based on the subthreshold leakage current to measure the discharge time (τdv) [13] with a view to overcoming the limitations of [11] and of improving the sensitivity obtained in [13] and [23] that would be the new proposed subthreshold leakage current differential aging sensor.…”

Section: B Motivation and Contributionsmentioning

confidence: 99%

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Differential Aging Sensor Using Subthreshold Leakage Current to Detect Recycled ICs

Alnuayri

Khursheed

Martinez

et al. 2021

IEEE Trans. VLSI Syst.

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Electronic system components can fall prey to counterfeiting via untrustworthy parties in the semiconductor supply chain, which has established a worldwide span to reduce costs, time to market and increase productivity. Recently, the integrated circuits (ICs) counterfeiting has threatened systems security and reliability that utilize ICs in all domains. This paper focuses on the most counterfeited area-recycled and remarked ICs-and aims to develop a technique to distinguish between new and used digital ICs based on an aging sensor mechanism. Aging sensors have been studied based on path-delay fingerprinting and ring oscillators frequency degradation, but their resolution requires further development to accurately detect short usage. This study proposes a novel differential aging sensor to measure the discharge time (τdv) increase that depends on the subthreshold leakage current due to aging with two on-chip designs. Simulations were conducted using the GlobalFoundries 22nm for aging with bias temperature instability and hot carrier injection combined. The results show that the τdv increase is 14.72% after 15 days of usage and increases to 60.49% after 3 years. This further increases at higher temperatures; the highest simulated temperature (125°C), τdv increases by 55.93% after 15 days, and 310.17% after 3 years. Proposed method also outperformed the traditional frequency degradation based aging estimation method, which at nominal temperature is found to be 5.00% after 15 days and 23.68% after 3 years. Therefore, discharge time is a sensitive indicator for aging, surpasses frequency in detecting previous usage and is robust against process, voltage, and temperature variations.

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Section: B Motivation and Contributionsmentioning

confidence: 99%

“…The ROs frequency is measured directly from the RO output, based on the two-ROs (RRO and SRO) design proposed in [11] and the one RO and NVM design in [22]. Reading the discharge time in nanoseconds (ns) can be achieved by using a counter clock sensor structure proposed in [23,29], by counting the clock signals. Fig.…”

Section: A Proposed Aging Sensor Structurementioning

confidence: 99%

Differential Aging Sensor Using Subthreshold Leakage Current to Detect Recycled ICs

Alnuayri

Khursheed

Martinez

et al. 2021

IEEE Trans. VLSI Syst.

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“…A major part of vast chips are already reused by the manufacturer and it is not detected DfAC measures methods. In the literature several conventional methods are recommended [6]- [10]. But these methods are consuming more test time, no automation low detection capability, and critical [11].…”

Section: Introductionmentioning

confidence: 99%

An efficient unused integrated circuits detection algorithm for parallel scan architecture

Sathyanarayana,

Kanathur Ramaswamy,

Srikantaswamy

et al. 2024

IJECE

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In recent days, many integrated circuits (ICs) are operated parallelly to increase switching operations in on-chip static random access memory (SRAM) array, due to more complex tasks and parallel operations being executed in many digital systems. Hence, it is important to efficiently identify the long-duration unused ICs in the on-chip SRAM memory array layout and to effectively distribute the task to unused ICs in SRAM memory array. In the present globalization, semiconductor supply chain detection of unused SRAM in large memory arrays is a very difficult task. This also results in reduced lifetime and more power dissipation. To overcome the above-mentioned drawbacks, an efficient unused integrated circuits detection algorithm (ICDA) for parallel scan architecture is proposed to differentiate the ‘0’ and ‘1’ in a larger SRAM memory array. The proposed architecture avoids the unbalancing of ‘0’ and ‘1’ concentrations in the on-chip SRAM memory array and also optimizes the area required for the memory array. As per simulation results, the proposed method is more efficient in terms of reliability, the detection rate in both used and unused ICs and reduction of power dissipation in comparison to conventional methods such as backscattering side-channel analysis (BSCA) and network attached storage (NAS) algorithm.

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A Support Vector Regression based Machine Learning method for on-chip Aging Estimation

Alnuayri

Martinez

Khursheed

et al. 2021

2021 4th International Conference on Computing &Amp; Information Sciences (ICCIS)

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Differential Aging Sensor to Detect Recycled ICs using Sub-threshold Leakage Current

Cited by 6 publications

References 14 publications

Differential Aging Sensor Using Subthreshold Leakage Current to Detect Recycled ICs

Differential Aging Sensor Using Subthreshold Leakage Current to Detect Recycled ICs

An efficient unused integrated circuits detection algorithm for parallel scan architecture

A Support Vector Regression based Machine Learning method for on-chip Aging Estimation

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