Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier

Yang, Jong‐Ryul; Han, Sang‐Min; Baek, Dong‐Hyun

doi:10.3390/s17092069

Cited by 11 publications

(12 citation statements)

References 23 publications

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“…The value of RV in (12) gradually increases at the gate biasing voltage below the threshold voltage because of the decreases in the magnitude of the exponential function of (9). The increase of RV at the gate biasing voltage above the threshold voltage has been explained by the increase in the gain of the preamplifier by the self-biasing of the transconductance stage [26]. The tendencies of RV to increase under the different gate voltages are because of the change in the threshold voltage by the body bias, and the results in Fig.…”

Section: B Rv and Nep Of The Proposed Detector Icmentioning

confidence: 85%

“…As shown in Fig. 6, the output at each core is delivered to a preamplifier and differentially combined as the drain-source current at the input transconductance stage in the preamplifier [26]. The input stage of the preamplifier is self-biased by the DC output of the detector core, and the self-biased operation reduces the noise from the detector cores and the preamplifier transmitted to the output of the detector IC when the input signal is not incident.…”

Section: B Qualitative Analysismentioning

confidence: 99%

“…The cascode structure functions as the isolator that reduces the deterioration of the characteristics owing to leakages between signals having differential phases. A total of six core transistors are used in the proposed detector, and the dummy transistors in the preamplifier are designed to generate the reference voltage by using the same transistors for minimizing the effect of the DC offset of the preamplifier itself [26].…”

Section: B Qualitative Analysismentioning

confidence: 99%

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CMOS Plasmon Detector With Three Different Body-Biasing MOSFETs

Han

Yang

2020

IEEE Access

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A complementary metal-oxide-semiconductor (CMOS) plasmon detector using metaloxide-semiconductor field-effect transistors (MOSFETs) biased at three different body voltages is proposed for high sensitivity and a wide dynamic range. The detection core consists of three differential MOSFET detectors biased at different body voltages based on the photoresponse variation depending on the body potential. The sensitivity of the proposed detector is improved through an increase in the nonlinearity owing to the uses of transistors biased by negative body voltages, and the dynamic range of the detector is widened through the parallel-connected detectors individually biased at different body voltages. A 200-GHz signal is simultaneously incident to the detection cores configured in-parallel through the integrated differential antenna, and DC voltages converted using the different photoresponsivity of the cores are current-combined at the preamplifier and amplified with a three-stage folded-cascode operational amplifier. Simulation and measurement results of the proposed detector designed using TSMC 0.25-µm CMOS technology show that the negative body-biasing (set to 0, −0.2, and −0.4 V), in the MOSFET can improve the voltage responsivity of 2.63 times, the sensitivity by 2.9-fold compared to zero body-biasing, reaching a dynamic range of 11.1% in the CMOS plasmon detector. Raster-scanned imaging for 60-µm thick copper tapes with a line width of 6−12 mm attached to 10-mm thick Styrofoam demonstrates that the signal-to-noise ratio of 200-GHz images can be improved from 25.5 dB to 30.6 dB when using the proposed detector with three different body-biased MOSFETs.

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Section: B Rv and Nep Of The Proposed Detector Icmentioning

confidence: 85%

Section: B Qualitative Analysismentioning

confidence: 99%

Section: B Qualitative Analysismentioning

confidence: 99%

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CMOS Plasmon Detector With Three Different Body-Biasing MOSFETs

Han

Yang

2020

IEEE Access

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“…Figure 4a shows a differential detector structure operating at 200 GHz including the detector core and differential antenna with the output of the detector core connected to the external low noise voltage amplifier. On the other hand, Figure 4b consists of the same differential detector as in Figure 4a, but includes a preamplifier that operates in the sub-threshold region with a unity gain [27]. The preamplifier output is increased by the high transconductance of the preamplifier.…”

Section: Two Plasmon Detectorsmentioning

confidence: 99%

Quasi-static Analysis Based on an Equivalent Circuit Model for a CMOS Terahertz Plasmon Detector in the Subthreshold Region

Son¹,

Yang²

2019

Sensors

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An analytic method for a complementary metal-oxide-semiconductor (CMOS) terahertz plasmon detector operating in the subthreshold region is presented using the equivalent circuit model. With respect to design optimization of the detector, the signal transmission from the antenna port to the output of the detector is described by using the proposed circuit model, which does not include a complicated physical operating principle and mathematical expressions. Characteristics from the antenna port to the input gate node of the detector are analyzed through the superposition method by using the characteristic impedance of transmission lines. The superposition method shows that the effect of interconnection lines at the input is simplified with the optimum bias point. The characteristics of the plasmon detection are expressed by using small-signal analysis of the single transistor at the sub-threshold operation. The results of the small-signal analysis show that the unity gain preamplifier located between the detector core and the main amplifier can improve the detection performances such as the voltage responsivity and the noise equivalent power. The measurement results using the fabricated CMOS plasmon detector at 200 GHz suggest that the unity gain preamplifier improves the detector performances, which are the same results as we received from the proposed analytic method.

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“…A plasmon detector receives THz signals from the gate coupled to the integrated antenna and produces a DC voltage to the drain depending on the incident power of the THz signals [ 4 , 6 , 13 ]. The SNR of the detector array plays an important role in obtaining clear and accurate THz images [ 14 ]. The SNR of a single detector pixel can be improved at the chopping frequency by using a mechanical chopper and a lock-in amplifier because its performance is limited by the 1/f noise and DC offset near DC or low frequency range [ 7 ].…”

Section: Signal Conditioning Block For Thz Imaging Systemmentioning

confidence: 99%

Signal-Conditioning Block of a 1 × 200 CMOS Detector Array for a Terahertz Real-Time Imaging System

Yang

Lee²,

Han³

2016

Sensors

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A signal conditioning block of a 1 × 200 Complementary Metal-Oxide-Semiconductor (CMOS) detector array is proposed to be employed with a real-time 0.2 THz imaging system for inspecting large areas. The plasmonic CMOS detector array whose pixel size including an integrated antenna is comparable to the wavelength of the THz wave for the imaging system, inevitably carries wide pixel-to-pixel variation. To make the variant outputs from the array uniform, the proposed signal conditioning block calibrates the responsivity of each pixel by controlling the gate bias of each detector and the voltage gain of the lock-in amplifiers in the block. The gate bias of each detector is modulated to 1 MHz to improve the signal-to-noise ratio of the imaging system via the electrical modulation by the conditioning block. In addition, direct current (DC) offsets of the detectors in the array are cancelled by initializing the output voltage level from the block. Real-time imaging using the proposed signal conditioning block is demonstrated by obtaining images at the rate of 19.2 frame-per-sec of an object moving on the conveyor belt with a scan width of 20 cm and a scan speed of 25 cm/s.

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Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier

Cited by 11 publications

References 23 publications

CMOS Plasmon Detector With Three Different Body-Biasing MOSFETs

CMOS Plasmon Detector With Three Different Body-Biasing MOSFETs

Quasi-static Analysis Based on an Equivalent Circuit Model for a CMOS Terahertz Plasmon Detector in the Subthreshold Region

Signal-Conditioning Block of a 1 × 200 CMOS Detector Array for a Terahertz Real-Time Imaging System

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