Differential electron scattering cross-sections at low electron energies: The influence of screening parameter

Čalkovský, Martin; Müller, Erich; Hugenschmidt, Milena; Gerthsen, D.

doi:10.1016/j.ultramic.2019.112843

Cited by 3 publications

(3 citation statements)

References 24 publications

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“…Several different expressions for η in the SR‐DSCSs are available in the literature, 24 which yield different MC‐simulation results 17 . Suitable DSCSs for MC simulations depend on the material and the experimental conditions 18 .…”

Section: Methodsmentioning

confidence: 99%

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Quantitative analysis of backscattered‐electron contrast in scanning electron microscopy

Čalkovský

Müller

Gerthsen

2022

Journal of Microscopy

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Backscattered-electron scanning electron microscopy (BSE-SEM) imaging is a valuable technique for materials characterisation because it provides information about the homogeneity of the material in the analysed specimen and is therefore an important technique in modern electron microscopy. However, the information contained in BSE-SEM images is up to now rarely quantitatively evaluated. The main challenge of quantitative BSE-SEM imaging is to relate the measured BSE intensity to the backscattering coefficient η and the (average) atomic number 𝑍 to derive chemical information from the BSE-SEM image. We propose a quantitative BSE-SEM method, which is based on the comparison of Monte-Carlo (MC) simulated and measured BSE intensities acquired from wedge-shaped electron-transparent specimens with known thickness profile.The new method also includes measures to improve and validate the agreement of the MC simulations with experimental data. Two different challenging samples (ZnS/Zn(O x S 1-x )/ZnO/Si-multilayer and PTB7/PC 71 BM-multilayer systems) are quantitatively analysed, which demonstrates the validity of the proposed method and emphasises the importance of realistic MC simulations for quantitative BSE-SEM analysis. Moreover, MC simulations can be used to optimise the imaging parameters (electron energy, detection-angle range) in advance to avoid tedious experimental trial and error optimisation. Under optimised imaging conditions pre-determined by MC simulations, the BSE-SEM technique is capable of distinguishing materials with small composition differences.

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Section: Methodsmentioning

confidence: 99%

“…The applied screening parameters are given in the legend of Figure 2 (see reference Ref. 24). Additionally, the results for the Mott DSCS 25 are plotted in light blue.…”

Section: Methodsmentioning

confidence: 99%

Quantitative analysis of backscattered‐electron contrast in scanning electron microscopy

Čalkovský

Müller

Gerthsen

2022

Journal of Microscopy

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“…For quantitative understanding of HAADF-STEM images, comparison between experimental and simulated STEM intensity is required. This applies in particular for HAADF-STEM at low electron energies, where Z contrast from experimental HAADF-STEM images can be counterintuitive because materials with higher atomic number appear darker than materials with lower atomic number due to the thickness dependence of HAADF-STEM imaging [22]. One way to simulate STEM intensities is based on solving the analytical transport equation [23] with the scattering distribution of the multiple scattered electrons evaluated numerically by using a series of Legendre polynomials [24].…”

Section: Simulation Of the Haadf-stem Intensitymentioning

confidence: 99%

Versatile application of a modern scanning electron microscope for materials characterization

et al. 2020

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Scanning electron microscopy (SEM) is an indispensable characterization technique for materials science. More recently, scanning electron microscopes can be equipped with scanning transmission electron microscopy (STEM) detectors, which considerably extend their capabilities. It is demonstrated in this work that the correlative application of SEM and STEM imaging techniques provides comprehensive sample information on nanomaterials. This is highlighted by the use of a modern scanning electron microscope, which is equipped with in-lens and in-column detectors, a double-tilt holder for electron transparent specimens and a CCD camera for the acquisition of on-axis diffraction patterns. Using multi-walled carbon nanotubes and Pt/Al 2 O 3 powder samples we will show that a complete characterization can be achieved by combining STEM (massthickness and diffraction) contrast and SEM (topography and materials) contrast. This is not possible in a standard transmission electron microscope where topography information cannot be routinely obtained. We also exploit the large tilt angle range of the specimen holder to perform 180 degrees STEM tomography on multi-walled carbon nanotubes, which avoids the missing wedge artifacts.

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Metal-organic frameworks based single-atom catalysts for advanced fuel cells and rechargeable batteries

Xiao

et al. 2023

Journal of Energy Chemistry

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Differential electron scattering cross-sections at low electron energies: The influence of screening parameter

Cited by 3 publications

References 24 publications

Quantitative analysis of backscattered‐electron contrast in scanning electron microscopy

Quantitative analysis of backscattered‐electron contrast in scanning electron microscopy

Versatile application of a modern scanning electron microscope for materials characterization

Metal-organic frameworks based single-atom catalysts for advanced fuel cells and rechargeable batteries

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