Differential Temperature Sensors Fully Compatible With a 0.35-$\mu$m CMOS Process

Aldrete-Vidrio, Eduardo; Mateo, D.; Altet, Josep

doi:10.1109/tcapt.2007.906349

Cited by 20 publications

(13 citation statements)

References 31 publications

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“…However, the Seebeck effect is also applicable to other combinations of metals (or alloys) nonspecified in these standards. For example, thermocouples can be implemented with materials commonly employed in CMOS technology, thus resulting in an on-chip non-standard thermocouple [39].…”

Section: B Typesmentioning

confidence: 99%

A Tutorial on Thermal Sensors in the 200th Anniversary of the Seebeck Effect

Reverter

2021

IEEE Sensors J.

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Two noteworthy events associated to the physics of thermal sensors were demonstrated and announced in 1821, exactly two hundred years ago. The first event was the Seebeck effect, which led to the development of thermocouples. The second was the study of the thermal dependence of the resistivity of pure metals, which led to the design of resistance temperature detectors (RTD). Sensors' science and technology has experienced remarkable advances in the last decades, but these two types of thermal sensors, whose physics were announced 200 years ago, are still nowadays the main sensor technology in many industrial applications that require the measurement of extreme temperatures. In such a 200 th anniversary, this tutorial aims to explain the operating principle, subtypes, input-output characteristic, limitations, and new trends under research of the four main types of thermal sensor: RTDs, thermistors, silicon sensors, and thermocouples. These are also compared with each other, highlighting the main advantages and disadvantages of each sensor technology.

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Section: B Typesmentioning

confidence: 99%

A Tutorial on Thermal Sensors in the 200th Anniversary of the Seebeck Effect

Reverter

2021

IEEE Sensors J.

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“…Various temperature sensors including thermocouples [40,66,67], infrared detectors, thermal-resistance [68,69,70] devices and thermistors [71,72,73] were investigated in the sense of the programmability, interfacing capability, accuracy, precision, and temperature range suitability for HVAC applications. Thermal sensors have issues with thermal distribution that is based on physical dimensions and shapes.…”

Section: The Temperature Sensormentioning

confidence: 99%

Embedded system for sensor communication and security

Feng

2012

IET Inf. Secur.

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“…In previous on-chip active sensors for differential temperature measurements [23], two temperature-sensing parasitic PNP devices were placed as a differential pair within an operational transconductance amplifier configuration. This sensor design approach yields a high sensitivity of up to 400 mV/mW [sensor output voltage/CUT power dissipation], but a drawback is the limited dynamic range of less than 1.5 mW with this sensitivity.…”

Section: A State Of the Artmentioning

confidence: 99%

“…This sensor design approach yields a high sensitivity of up to 400 mV/mW [sensor output voltage/CUT power dissipation], but a drawback is the limited dynamic range of less than 1.5 mW with this sensitivity. Generally, such differential sensors are optimal for the heterodyne approach ( [12], [13]) and the ac setup at low frequencies ( [23]) with external lock-in amplifier or spectrum analyzer, where the low-power products at do not saturate the sensor.…”

Section: A State Of the Artmentioning

confidence: 99%

Electrothermal Design Procedure to Observe RF Circuit Power and Linearity Characteristics With a Homodyne Differential Temperature Sensor

Onabajo

Altet

Aldrete-Vidrio

et al. 2011

IEEE Trans. Circuits Syst. I

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The focus in this paper is on the extraction of RF circuit performance characteristics from the dc output of an on-chip temperature sensor. Any RF input signal can be applied to excite the circuit under examination because only dissipated power levels are measured, which makes this approach attractive for online thermal monitoring and built-in test scenarios. A fully differential sensor topology is introduced that has been specifically designed for the proposed method by constructing it with a wide dynamic range, programmable sensitivity to dc, and RF power dissipation, as well as compatibility with CMOS technology. This paper also presents an outline of a procedure to model the local electrothermal coupling between heat sources and the sensor, which is used to define the temperature sensor's specifications as well as to predict the thermal signature of the circuit under test.A prototype chip with an RF amplifier and temperature sensor was fabricated in a conventional 0.18-m CMOS technology. The proposed concepts were validated by correlating RF measurements at 1 GHz with the measured dc voltage output of the on-chip sensor and the simulation results, demonstrating that the RF power dissipation can be monitored and the 1-dB compression point can be estimated with less than 1-dB error. The sensor circuitry occupies a die area of 0.012 mm , which can be shared when several on-chip locations are observed by placement of multiple temperature-sensing parasitic bipolar devices.Index Terms-CMOS temperature sensor, differential temperature sensing, electrothermal coupling, electrothermal IC design, homodyne measurement method, low-noise amplifier (LNA), on-chip temperature gradient measurement, radio frequency (RF) built-in test (BIT), radio frequency (RF) power detector.

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Differential Temperature Sensors Fully Compatible With a 0.35-$\mu$m CMOS Process

Cited by 20 publications

References 31 publications

A Tutorial on Thermal Sensors in the 200th Anniversary of the Seebeck Effect

A Tutorial on Thermal Sensors in the 200th Anniversary of the Seebeck Effect

Embedded system for sensor communication and security

Electrothermal Design Procedure to Observe RF Circuit Power and Linearity Characteristics With a Homodyne Differential Temperature Sensor

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