Diffusion and activation of Zn implanted into InP:S

Jakieła, R.; Barcz, A.; Wegner, E.; Zagojski, A.

doi:10.1016/j.vacuum.2005.01.059

Cited by 10 publications

(8 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The Be profiles for samples annealed at different temperatures (see Figs 1b and 2) all exhibit a visible drop (kink). Similar behavior was already observed for diffusion of Zn in GaAs [22], Zn in InP [23], and Mn in GaAs [24]. As shown, the change in the SIMS profile shape indicates that the diffusion coefficient depends on the concentration of the studied element.…”

Section: Resultssupporting

confidence: 82%

Diffusion of Mn in gallium nitride: Experiment and modelling

Jakieła

Gas

Sawicki

et al. 2019

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted into a high structural quality gallium nitride layer crystallized by halide vapor phase epitaxy on an ammonothermal gallium nitride substrate. Post-implantation annealing was performed at different temperatures, between 1000°C and 1400°C, under high nitrogen pressure. Beryllium profiles were analyzed in the as-implanted and annealed samples by secondary ion mass spectrometry. It was shown that the diffusion of the dopant results from the combination of two mechanisms: rapid interstitial and slow interstitial-substitutional diffusion.The pre-exponential factor as well as activation energy for both diffusion paths were determined. Moreover, from the characteristic features of beryllium depth profiles, the formation energies of gallium vacancy and beryllium in interstitial position were calculated and compared to the theoretical values.

show abstract

Section: Resultssupporting

confidence: 82%

Diffusion of Mn in gallium nitride: Experiment and modelling

Jakieła

Gas

Sawicki

et al. 2019

Journal of Alloys and Compounds

View full text Add to dashboard Cite

show abstract

“…Such characteristic profiles appear in the case of various dopants in various crystal materials and indicate that the atom diffusion is determined by an additional factor reducing the atom mobility [59][60][61][62]. The influencing factors can be level of dopant trapping defects resulting from the Fermi level, the charge state of defects affecting they mobility, which may also result from the Fermi level or as in the case SiC, the dopant forming complexes with diffusing atoms.…”

Section: Hydrogen Properties In Sicmentioning

confidence: 99%

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

2019

Acta Phys. Pol. A

View full text Add to dashboard Cite

The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes limitations not only on the purity of the materials under processing but, also, on the detection and measurement of the content of these species. Specifically, a review of electrical and optical properties, based on the available literature, is presented for: hydrogen in GaN, ZnO and SiC, carbon in GaN and ZnO, nitrogen in ZnO and SiC and oxygen in GaN and SiC. Further, the refinements of the SIMS (Secondary Ions Mass Spectrometry) analytical technique, aiming to improve the sensitivity and detection limit of atmospheric elements, are described in detail. These include the choice of primary beam type and current, type of secondary single or cluster ions, geometry and vacuum conditions. Finally, the evaluated so-called RSF parameters (Relative Sensitivity Factors) are given for each atom-semiconductor pair, converting raw data to the absolute value of concentration.

show abstract

“…On certain occasions a good set of contacts could be produced but the reproducibility factor was poor. It has been found [14] that suitable contacts can be made to this type of material using indium/zinc alloys and a more sophisticated system of temperature control. Therefore, one can either use a better temperature programme or change to another system of contacting.…”

Section: Point Contactingmentioning

confidence: 99%

Hall Effect measurements on p-n-p InP structures

Sequeira

Santos

2008

Braz. J. Phys.

View full text Add to dashboard Cite

The electrical properties of p-type layers of indium phosphide (InP), formed by the diffusion of zinc into n-type material, are studied by Hall Effect measurements. A wide range of diffusion conditions are used and both homogeneously doped specimens and those containing a zinc atom concentration gradient are produced. A non-correspondence of atom and carrier concentrations is indicated, confirming previous four point resistivity studies. Carrier profiles are achieved by both serial sectioning and multiple specimen techniques. Contacting procedures are developed from which plots of carrier mobility versus carrier concentration, in the range 5 x 10 17 -5 x 10 19 cm −3 , are produced for p-n-p InP. In the main, present results showed good reproducibility and conformed to the "rules" of the Van der Pauw technique.

show abstract

Diffusion and activation of Zn implanted into InP:S

Cited by 10 publications

References 17 publications

Diffusion of Mn in gallium nitride: Experiment and modelling

Diffusion of Mn in gallium nitride: Experiment and modelling

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

Hall Effect measurements on p-n-p InP structures

Contact Info

Product

Resources

About