Diffusion and evolution of hydrogen in hydrogenated amorphous and microcrystalline silicon

Beyer, W.

doi:10.1016/s0927-0248(02)00438-5

Cited by 125 publications

(144 citation statements)

References 103 publications

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“…Therefore, a diffusion coefficient of D eff ¼ 6 Â 10 À17 cm 2 /s is inferred. This value is consistent with the reported result of plasma in-diffusion in a-Si:H. 16 Figure 4 shows the hydrogen and tritium profiles of c-Si tritiated in tritium gas of 250 C and 100 bar for 132 h. The tritiated sample had been stored for three months when the SIMS was performed. A tritium concentration of 8 at.…”

Section: Figsupporting

confidence: 89%

“…16,[21][22][23] In the D diffusion and plasma/monoatomic hydrogen treatment, hydrogen solubility of 1-3% has been observed. 22,24 At such low concentration levels, the weak Si-Si bonds and dangling bonds seem to provide sites for H incorporation without dilation of the silicon network; the solubility depends on the microstructure which, in turn, depends on the deposition conditions for the film.…”

Section: A Tritium Solubilitymentioning

confidence: 99%

“…This is generally in agreement with the literature data. 16 Here, the mass difference between hydrogen and tritium is neglected. The range of energies suggests variation in the Si-T bonding environment.…”

Section: B Free Energy Of Desorptionmentioning

confidence: 99%

“…Electronic mail: kchen@engr.pitt.edu. contrast to the relatively large quantity of literature on the effect of post-hydrogenation and post-deuteration, 16 almost no study has involved post-tritiation of amorphous and crystalline silicon. These studies aim to clarify the post-tritiation mechanism between tritium gas and silicon materials.…”

Section: Introductionmentioning

confidence: 99%

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Self-irradiation enhanced tritium solubility in hydrogenated amorphous and crystalline silicon

Liu¹,

Chen²,

Kherani³

et al. 2011

Journal of Applied Physics

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Experimental results on tritium effusion, along with the tritium depth profiles, from hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) tritiated in tritium (T2) gas at various temperatures and pressures are presented. The results indicate that tritium incorporation is a function of the material microstructure of the as-grown films, rather than the tritium exposure condition. The highest tritium concentration obtained is for a-Si:H deposited at a substrate temperature of 200°C. The tritium content is about 20 at. % on average with a penetration depth of about 50 nm. In contrast, tritium occluded in the c-Si is about 4 at. % with penetration depth of about 10 nm. The tritium concentration observed in a-Si:H and c-Si is much higher than the reported results for the post-hydrogenation process. β irradiation appears to catalyze the tritiation process and enhance tritium dissolution in the silicon matrix. The combination of tritium decay and β-induced ionizations results in formation of reactive species of tritium (tritium atoms, radicals, and ions) that readily adsorb on silicon. The electron bombardment of the silicon surface and subsurface renders it chemically active thereby promoting surface adsorption and subsurface diffusion of tritium, thus leading to tritium occlusion in the silicon matrix. Gaussian deconvolution of tritium effusion spectra yields two peaks for a-Si:H films tritiated at high temperature (250°C), one low temperature (LT) peak which is attributed to tritiated clusters and higher order tritides, and another high temperature peak which is attributed to monotritides. Activation energy of 2.6–4.0 eV for the LT peak was found.

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Section: Figsupporting

confidence: 89%

Section: A Tritium Solubilitymentioning

confidence: 99%

Section: B Free Energy Of Desorptionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Self-irradiation enhanced tritium solubility in hydrogenated amorphous and crystalline silicon

Liu¹,

Chen²,

Kherani³

et al. 2011

Journal of Applied Physics

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“…However, the deposited coating includes hydrogen as well. The hydrogen content of the deposited silicon film was measured by the effusion method [24]. An H content of 11.8 % and 16 % was measured with and without substrate bias, respectively.…”

Section: Monte-carlo Code For Analyzing Ion-solid Interactionsmentioning

confidence: 99%

Mechanisms of layer growth in microwave-PECVD silan plasmas – Experiment and simulation

Ramisch

Mutzke

Schneider

et al. 2013

Nuclear Instruments and Methods in Physics Research Section B:

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For the specific manipulation of barrier-layer properties, a detailed analysis of the layer-growth mechanisms in microwave-PECVD was carried out for Si-wafers with a trench structure as "model cavities" in the µm range. The deposition of a-Si:H (hydrogenated amorphous silicon) layers in pure monosilane plasmas was used as model system to compare experimental results and simulations using the 2D binary collision code SDTrimSP-2D, which showed very good agreement with the experiment. Without bias the layer tends to close above the cavities from both sides, but cracks remain at the closure positions. By biasing the substrate a smoothing of the layer edges above the cavities occurred. Thus, the cavities remained open for a longer time and a more homogeneous coating of the notches is obtained.

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Diffusion in Ceramics

Borchardt

Gömann

Kilo

et al. 2008

Ceramics Science and Technology

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Diffusion and evolution of hydrogen in hydrogenated amorphous and microcrystalline silicon

Cited by 125 publications

References 103 publications

Self-irradiation enhanced tritium solubility in hydrogenated amorphous and crystalline silicon

Self-irradiation enhanced tritium solubility in hydrogenated amorphous and crystalline silicon

Mechanisms of layer growth in microwave-PECVD silan plasmas – Experiment and simulation

Diffusion in Ceramics

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