Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

Jin, Niu; Chung, Sung-Yong; Rice, Anthony T.; Berger, Paul R.; Thompson, Phillip E.; Rivas, Cristian; Lake, Roger K.; Sudirgo, S.; Kempisty, J.J.; Curanovic, B.; Rommel, S.L.; Hirschman, K.D.; Kurinec, Santosh; Chi, P; Simons, David S.

doi:10.1109/ted.2003.815375

Cited by 44 publications

(4 citation statements)

References 39 publications

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“…A voltagecontrolled oscillator 4 requires high current for the generation of strong microwave signals. Past Si/ SiGe resonant interband tunnel diode ͑RITD͒ work has explored this broad current range by varying the tunneling spacer thickness [6][7][8][9][10][11][12] and the Ge percentage. 8 Increased Ge percentage in the RITD spacer manifests as an elevated current density commonly attributed to the lowering of the barrier from the reduced bandgap.…”

Section: Observation Of Strain In Pseudomorphic Si 1−x Ge X By Trackimentioning

confidence: 99%

“…27 The design of the tunneling structures for this experiment is based on the authors' past work developing Si/ SiGe-based tunnel diodes for circuit applications. [6][7][8][9][10][11][12] The peak-to-valley current ratio ͑PVCR͒ and peak current density ͑PCD͒ are two major figures of merit characterizing a tunnel diode's electrical performance. Both are determined by the tunneling process in the diode structure along with secondary effects.…”

Section: A Sample Design and Fabricationmentioning

confidence: 99%

“…9 The Ge-containing layers serve a vital role by surrounding the B ␦-doped spike acting as dopant diffusion barriers, thereby facilitating higher annealing temperatures for better point defect annihilation without B outdiffusion from the ␦-doped spike. 9 Principally, these point defects are vacancies created by the low substrate temperature during MBE growth, 28 which is needed to suppress Ge, P, and B segregation during growth and in situ diffusion. The reduced substrate temperature limits the ability of surface adatoms to move in a correlated manner to a step edge, creating vacancy-type defects.…”

Section: Ritdmentioning

confidence: 99%

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Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si∕SiGe resonant interband tunnel diodes via electron tunneling spectroscopy

Anisha

Jin

et al. 2009

Journal of Applied Physics

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High-sensitivity and low-noise electron tunneling spectroscopy was used to measure the phonon spectra via band-to-band tunneling in Si∕SiGe resonant interband tunneling diodes (RITD), tracking the effects of the weighted average Ge percentage in the central tunneling spacer. With a composite RITD tunneling barrier consisting of 4nm of intrinsic Si0.60Ge0.40 and n nm of intrinsic Si (n=4,6,8,10) all grown on Si substrates, the transverse acoustic (TA) phonon of Si0.60Ge0.40 was identified and the energy was measured to be 16±1meV. This is higher than the ∼14meV energy of the TA phonon in Si0.60Ge0.40 reported from measurements of Esaki tunnel diodes fabricated from bulk single crystals. The increase is attributed to the compressive strain in the Si0.60Ge0.40 layer grown on Si substrates. The observation of the upshift of phonon energy with strain by electron tunneling spectroscopy demonstrates the capability of electron tunneling spectroscopy to characterize residual strain.

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Section: Observation Of Strain In Pseudomorphic Si 1−x Ge X By Trackimentioning

confidence: 99%

Section: A Sample Design and Fabricationmentioning

confidence: 99%

Section: Ritdmentioning

confidence: 99%

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Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si∕SiGe resonant interband tunnel diodes via electron tunneling spectroscopy

Anisha

Jin

et al. 2009

Journal of Applied Physics

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“…SiGe cladding the boron d-doping also acts as a dopant diffusion barrier suppressing interstitial diffusion of the B. 15 Concurrently, Si surrounds the phosphorus d-doping layer to suppress vacancy mediated diffusion. Growth was initiated with a 100 nm p þ Si buffer layer deposited at 650 C under RP using silane (SiH 4 ) and intentionally doped at a nominal level of 5 Â 10 19 cm À3 using diborane (B 2 H 6 ).…”

mentioning

confidence: 99%

High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition

Anisha

Berger

Loo

2012

Applied Physics Letters

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Si/SiGe resonant interband tunnel diodes were fabricated using chemical vapor deposition (CVD) on 200-mm diameter p-doped silicon wafers. The resonant interband tunnel diode structure consists of a p+-i-n+ diode that incorporates vapor phase doped δ-doping to enhance quantum mechanical tunneling probability. The tunneling barrier thickness is varied from 2 nm to 8 nm, and a record peak-to-valley current ratio of 5.2 for a CVD process is reported for a 6 nm barrier thickness with a room temperature peak tunneling current of 20 A/cm2. The current density increases exponentially with spacer thickness reduction with a maximum value of 280 A/cm2 for a 2 nm barrier.

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Controllable Preparation of 2D Vertical van der Waals Heterostructures and Superlattices for Functional Applications

Liang

Yang

et al. 2022

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In general, 2D materials adopt a unique layered crystal structure, i.e., the neighboring layers are bonded together by weak van der Waals (vdW) interactions and the intralayer atoms and are bonded together through strong covalent or ionic bonds, which allows easy exfoliation of atomically thin nanosheets from their bulk counterpart. With a surface free of dangling bonds surface, 2D vdW materials can be integrated to produce next-generation vdW heterostructures (vdWHs) or vdW superlattices (vdWSLs), which provide a powerful material platform for exploring fundamentally new physics and exotic devices. For conventionally bonded heterostructures, the synthesis relies heavily on one-to-one chemical bonds, and the component materials must satisfy strict lattice matching and processing compatibility requirements. [3] It is difficult for the bonded heterostructures/superlattices between materials with mismatched lattices to maintain the intrinsic heterogeneous interface, resulting in various types of damage, such as strain, defects, atomic exchange, and distortion. [4,5] However, vdW integration can overcome the limits of bonded heterostructures, allowing unprecedented flexibility to combine materials with radically different chemical compositions, crystal structures, or electronic properties. [6][7][8] More importantly, the as-fabricated vdWHs possess atomically sharp and clean vdW interfaces along with well-defined moiré superlattices, enabling a series of unique electronic and photonic characteristics that cannot be realized in conventionally bonded heterostructures, such as ultrahigh on-current and mobility in 2D metal-semiconductor (M-S) vdWH-based field-effect transistors (FETs), [7,9] interlayer coupling and ultrafast charge transfer in transition-metal dichalcogenide (TMD) heterostructures, [10] Mott-like insulator and superconducting behavior in magic-angled graphene, [11,12] moiré excitons in twisted TMD heterobilayers, [13,14] and topological superconductivity in CrBr 3 /NbSe 2 ferromagnetic/superconductor vdWHs. [15] Therefore, developing reliable assembly methods for vdWHs or vdWSLs with atomically clean interfaces is an essential prerequisite for relevant physical exploration and practical applications.In general, the preparation methods for vdWHs or vdWSLs can be divided into top-down and bottom-up methods. To 2D van der Waals heterostructures (vdWHs) and superlattices (SLs) with exotic physical properties and applications for new devices have attracted immense interest. Compared to conventionally bonded heterostructures, the danglingbond-free surface of 2D layered materials allows for the feasible integration of various materials to produce vdWHs without the requirements of lattice matching and processing compatibility. The quality of interfaces in artificially stacked vdWHs/vdWSLs and scalability of production remain among the major challenges in the field of 2D materials. Fortunately, bottom-up methods exhibit relatively high controllability and flexibility. The growth parameters, such as the temperatur...

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Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

Cited by 44 publications

References 39 publications

Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si∕SiGe resonant interband tunnel diodes via electron tunneling spectroscopy

Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si∕SiGe resonant interband tunnel diodes via electron tunneling spectroscopy

High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition

Controllable Preparation of 2D Vertical van der Waals Heterostructures and Superlattices for Functional Applications

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