Diffusion Behavior of Cumulative He Doped in Cu/W Multilayer Nanofilms at Room Temperature

Abstract

Cu/W multilayer nanofilms are prepared in pure Ar and He/Ar mixing atmosphere by the rf magnetron sputtering method. The cross-sectional morphology and the defect distribution of the Cu/W multilayer nanofilms are characterized by scanning electron microscopy and Doppler broadening positron annihilation spectroscopy. The results show that plenty of point defects can be produced by introducing He during the growth of the multilayer nanofilms. With the increasing natural storage time, He located in the near surface of the Cu/W multilayer nanofilm at room temperature could be released gradually and induce the segregation of He-related defects due to the diffusion of He and defects. However, more He in the deep region spread along the interface of the Cu/W multilayer nanofilm. Meanwhile, the layer interfaces can still maintain their stability.

Exothermic Supercooled Liquid—Liquid Transition in Amorphous Sulfur

“…There are numerous examples of oxide and organic glasses where the supercooled liquid-to-liquid transition is continuous and endothermic without the intervention of crystallization in the supercooled regime. [11] We speculate that the abnormal exothermic supercooled liquid-to-liquid transition in a-S is related to sulfur clusters. Sulfur is one of the most characteristic examples of inorganic polymerization.…”

Asymmetric interaction of point defects and heterophase interfaces in ZrN/TaN multilayered nanofilms

“…Since the He bubble is a He-vacancy cluster with self-interstitials at its periphery31, the density of the He bubbles can, to a large extent, reflect the density of vacancy-like defects in the multilayered nanofilms32. As reported previously, the interfaces serving as an effective sink to the point defects could assist the vacancy-interstitial recombination near the interfaces1621.…”

Theoretics-directed effect of copper or aluminum content on the ductility characteristics of Al-based (Al 3 Ti, AlTi, AlCu, AlTiCu 2 ) intermetallic compounds

“…For the complex monoclinic structure, the following restrictions are the basic evaluation standard: [35] ) +C 55 > 0, (16) Elastic constants are shown in Table 2. For Al 3 Ti, AlTi, AlCu, AlTiCu 2 , these stability are fulfilled with Eqs.…”

“…As we all know, Cu-based ICs have showcased for a new talent in biomechanical applications, aerospace and connectors with their perfect mechanical and physical ductile properties. [16][17][18][19] Especially, their brittleness is mainly due to the strong directional metallic-covalent bonds, which is based on the bonding mechanism by Osman et al [20] In view of the present situation, an original plan is revised that the added element could decrease the content of Al percent, and increase the ductile character of Al-Ti alloy with the content of Cu. Of course, there are some corroborated experiments and theory evidences to support this initial hypothesis.…”