1988
DOI: 10.1016/0022-3093(88)90185-8
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Diffusion behavior of implanted iron in fused silica glass

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Cited by 12 publications
(4 citation statements)
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“…Here, the RBS signal from the as-coated sample is shown in black and the signal from the annealed sample is shown in red. The diffusion coefficient for Ge was previously found to be ∼2 × 10 –16 cm 2 /s when Ge was ion-implanted into SiO 2 . Based on this value for solid-state diffusion, one would expect the diffusion tail of Ge into the SiO 2 wafer to have a breadth of . However, the concentration of GeO 2 in this experiment decreased to ∼15 mol % and extended ∼400 nm into the substrate as shown by the concentration profiles in the inset of Figure b.…”
Section: Resultsmentioning
confidence: 57%
“…Here, the RBS signal from the as-coated sample is shown in black and the signal from the annealed sample is shown in red. The diffusion coefficient for Ge was previously found to be ∼2 × 10 –16 cm 2 /s when Ge was ion-implanted into SiO 2 . Based on this value for solid-state diffusion, one would expect the diffusion tail of Ge into the SiO 2 wafer to have a breadth of . However, the concentration of GeO 2 in this experiment decreased to ∼15 mol % and extended ∼400 nm into the substrate as shown by the concentration profiles in the inset of Figure b.…”
Section: Resultsmentioning
confidence: 57%
“…This effect has been referred to as Ôout diffusionÕ. It has been suggested that the shift in the implantation peak is due to an interaction of the implanted ions with oxygen [20]. Both oxygen and electrons can diffuse through the silica matrix at rates which are comparable to the diffusion rates of germanium which are reported below, and these can be expected to influence the motion of the germanium ions.…”
Section: Out Diffusionmentioning
confidence: 91%
“…For example, it has been reported that the concentration peak of implanted ions of gallium [16], bismuth [17], arsenic [18,19], and iron [20,21] shifts toward the surface during annealing. This effect has been referred to as Ôout diffusionÕ.…”
Section: Out Diffusionmentioning
confidence: 98%
“…At the intense oxidation temperature, the oxidation rate increases dramatically. This is due to the considerable increase in the diffusion rate at higher temperatures [21][22][23][24], resulting in a sharp increase in the oxidation rate. After the FOT, the oxidation reaction stops rapidly.…”
Section: Methodsmentioning
confidence: 99%