Diffusion bonding at the interface of Bi2Te3 thermoelectric modules

Nguyen, Yen Ngoc; Son, Injoon

doi:10.1016/j.matchemphys.2022.126813

Cited by 13 publications

(4 citation statements)

References 46 publications

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“…In addition, the electrode materials and manufacturing process are crucial factors for the stability and stretchability of flexible devices. Some FTEGs use solid metals to connect the thermoelectric columns in flexible substrates, such as silver [ 24 , 25 ] and copper [ 26 , 27 ]. Stress concentration during repeated bending can cause the rigid electrodes to fracture, making them unsuitable for wearable applications [ 28 , 29 ].…”

Section: Introductionmentioning

confidence: 99%

A Novel PDMS-Based Flexible Thermoelectric Generator Fabricated by Ag2Se and PEDOT:PSS/Multi-Walled Carbon Nanotubes with High Output Performance Optimized by Embedded Eutectic Gallium–Indium Electrodes

Guo,

Shi,

Guo

et al. 2024

Nanomaterials

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Flexible thermoelectric generators (FTEGs), which can overcome the energy supply limitations of wearable devices, have received considerable attention. However, the use of toxic Te-based materials and fracture-prone electrodes constrains the application of FTEGs. In this study, a novel Ag2Se and Poly (3,4-ethylene dioxythiophene): poly (styrene sulfonate) (PEDOT:PSS)/multi-walled carbon nanotube (MWCNT) FTEG with a high output performance and good flexibility is developed. The thermoelectric columns formulated in the work are environmentally friendly and reliable. The key enabler of this work is the use of embedded EGaIn electrodes, which increase the temperature difference collected by the thermoelectric column, thereby improving the FTEG output performance. Additionally, the embedded EGaIn electrodes could be directly printed on polydimethylsiloxane (PDMS) molds without wax paper, which simplifies the preparation process of FTEGs and enhances the fabrication efficiency. The FTEG with embedded electrodes exhibits the highest output power density of 25.83 μW/cm2 and the highest output power of 10.95 μW at ΔT = 15 K. The latter is 31.6% higher than that of silver-based FTEGs and 2.5% higher than that of covered EGaIn-based FTEGs. Moreover, the prepared FTEG has an excellent flexibility (>1500 bends) and output power stability (>30 days). At high humidity and high temperature, the prepared FTEG maintains good performance. These results demonstrate that the prepared FTEGs can be used as a stable and environmentally friendly energy supply for wearable devices.

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Section: Introductionmentioning

confidence: 99%

A Novel PDMS-Based Flexible Thermoelectric Generator Fabricated by Ag2Se and PEDOT:PSS/Multi-Walled Carbon Nanotubes with High Output Performance Optimized by Embedded Eutectic Gallium–Indium Electrodes

Guo,

Shi,

Guo

et al. 2024

Nanomaterials

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“…Bi 2 Te 3 (BT)-based alloys are the most widely used TE materials with great potential for commercial applications. − The most commonly used n-type and p-type Bi 2 Te 3 -based alloys are Bi 2 Te 2.7 Se 0.3 (BTS) and Bi 0.5 Sb 1.5 Te 3 (BST), respectively, both of which are designed by controlling the carrier type and concentration through doping. ,− Due to good matching with BT-based alloys, low resistance, and good service stability, Ni metal and alloys serve as ideal electrode materials for both BST and BTS TE materials. ,,, Ni can interact with BST and BTS to form intermetallics, and the reaction is mainly controlled by Ni diffusion into the TE material matrix. , However, the interfacial reaction mechanism is still obscure as both BST and BTS have complicated chemical compositions, resulting in preferential reaction and phase separation at the atomic scale. Moreover, BT-based alloys with an anisotropic van der Waals (vdW) layered structure have demonstrated strong anisotropic electron and phonon transport properties. − BT/Ni interface structural evolution and diffusion behavior also critically depend on the interface orientation.…”

Section: Introductionmentioning

confidence: 99%

“…4,24−30 Due to good matching with BT-based alloys, low resistance, and good service stability, Ni metal and alloys serve as ideal electrode materials for both BST and BTS TE materials. 17,26,31,32 Ni can interact with BST and BTS to form intermetallics, and the reaction is mainly controlled by Ni diffusion into the TE material matrix. 33,34 However, the interfacial reaction mechanism is still obscure as both BST and BTS have complicated chemical compositions, resulting in preferential reaction and phase separation at the atomic scale.…”

Section: ■ Introductionmentioning

confidence: 99%

Atomic-Resolution Interfacial Reaction Mechanism between Bi₂Te₃-Based Alloys and Ni Electrodes

Xue,

Lu,

Cui

et al. 2024

ACS Appl. Mater. Interfaces

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Interdiffusion and solid–solid phase reaction at the interface between thermoelectric (TE) materials and the electrode critically influence interfacial transport properties and the overall energy conversion efficiency during service. Here, the microstructural evolution and diffusion mechanisms at the interfaces between the most widely used Bi2Te3-based TE materials, n-type Bi2Te2.7Se0.3 (BTS) and p-type Bi0.5Sb1.5Te3 (BST), and Ni electrodes were investigated at atomic resolution using spherical aberration-corrected scanning transmission electron microscopy (STEM). The BTS(0001)/Ni and BST(0001)/Ni interfaces were constructed by depositing Ni nanoparticles on mechanically exfoliated BTS and BST bulk materials and subsequent annealing. The interfacial reaction is initially dominated by Ni diffusion into the TE matrix to form NiAs-type NiM intermetallics, while Ni trans-quintuple-layer diffusion only occurs in Sb-rich BST. The Bi-rich BTS is more influenced by the Ni–Te preferential reaction, resulting in NiM abnormal grain growth and the formation of tilted and rotated interfaces. Bi diffusion into the BTS matrix forms a Bi double layer at the interface or Bi2[Bi2(Te,Se)3] as the annealing temperature increases, while Bi diffusion into the Ni thin film greatly accelerates the interfacial reaction rate, as elucidated by in situ heating STEM. The results provide essential structural details to understand and prevent the degradation of TE device performance.

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“…To prevent the interfacial reactions between solder and TE materials, a thin diffusion barrier, such as electrodeposited Ni, is introduced onto the soldering plane of TE materials. In recent years, extensive investigations have been conducted on the correlated interfacial reactions of lead-free solders/diffusion barriers/TE materials [9][10][11][12][13][14][15]. Electroless nickel/immersion gold (ENIG) and electroless nickel/electroless palladium/immersion gold (ENEPIG) are commonly used surface finishing processes for the diffusion barrier.…”

Section: Introductionmentioning

confidence: 99%

Interfacial Reactions between Sn-Based Solders and n-Type Bi2(Te,Se)3 Thermoelectric Material

Wang,

Chiu,

2024

Materials

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This study investigated the interfacial reactions between n-type Bi2(Te,Se)3 thermoelectric material, characterized by a highly-oriented (110) plane, and pure Sn and Sn-3.0Ag-0.5Cu (wt.%) solders, respectively. At 250 °C, the liquid-state Sn/Bi2(Te,Se)3 reactions resulted in the formation of both SnTe and BiTe phases, with Bi-rich particles dispersed within the SnTe phase. The growth of the SnTe phase exhibited diffusion-controlled parabolic behavior over time. In contrast, the growth rate was considerably slower compared to that observed with p-type (Bi,Sb)2Te3. Solid-state Sn/Bi2(Te,Se)3 reactions conducted between 160 °C and 200 °C exhibited similar interfacial microstructures. The SnTe phase remained the primary reaction product, embedded with tiny Bi-rich particles, revealing a diffusion-controlled growth. However, the BiTe layer had no significant growth. Further investigation into growth kinetics of intermetallic compounds and microstructural evolution was conducted to elucidate the reaction mechanism. The slower growth rates in Bi2(Te,Se)3, compared to the reactions with (Bi,Sb)2Te3, could be attributed to the strong suppression effect of Se on SnTe growth. Additionally, the interfacial reactions of Bi2(Te,Se)3 with Sn-3.0Ag-0.5Cu were also examined, showing similar growth behavior to those observed with Sn solder. Notably, compared with Ag, Cu tends to diffuse towards the interfacial reaction phases, resulting in a high Cu solubility within the SnTe phase.

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Diffusion bonding at the interface of Bi2Te3 thermoelectric modules

Cited by 13 publications

References 46 publications

A Novel PDMS-Based Flexible Thermoelectric Generator Fabricated by Ag2Se and PEDOT:PSS/Multi-Walled Carbon Nanotubes with High Output Performance Optimized by Embedded Eutectic Gallium–Indium Electrodes

A Novel PDMS-Based Flexible Thermoelectric Generator Fabricated by Ag2Se and PEDOT:PSS/Multi-Walled Carbon Nanotubes with High Output Performance Optimized by Embedded Eutectic Gallium–Indium Electrodes

Atomic-Resolution Interfacial Reaction Mechanism between Bi₂Te₃-Based Alloys and Ni Electrodes

Interfacial Reactions between Sn-Based Solders and n-Type Bi2(Te,Se)3 Thermoelectric Material

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Diffusion bonding at the interface of Bi2Te3 thermoelectric modules

Cited by 13 publications

References 46 publications

A Novel PDMS-Based Flexible Thermoelectric Generator Fabricated by Ag2Se and PEDOT:PSS/Multi-Walled Carbon Nanotubes with High Output Performance Optimized by Embedded Eutectic Gallium–Indium Electrodes

A Novel PDMS-Based Flexible Thermoelectric Generator Fabricated by Ag2Se and PEDOT:PSS/Multi-Walled Carbon Nanotubes with High Output Performance Optimized by Embedded Eutectic Gallium–Indium Electrodes

Atomic-Resolution Interfacial Reaction Mechanism between Bi2Te3-Based Alloys and Ni Electrodes

Interfacial Reactions between Sn-Based Solders and n-Type Bi2(Te,Se)3 Thermoelectric Material

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Atomic-Resolution Interfacial Reaction Mechanism between Bi₂Te₃-Based Alloys and Ni Electrodes