Silicon is an attractive anode material for all-solid-state
batteries
(ASSBs) because it has a high energy density and is safer than metallic
lithium. Conventional silicon powder composite electrodes have significant
internal voids and detrimental interfaces that suppress the lithium
transport and lifetime. Here, we demonstrate that surface-treated
thin silicon wafers could serve as monolithic additive-free, electrolyte-free,
and void-free electrodes that can achieve high areal capacity at room
temperature (∼25 °C). A dense solid electrolyte interface
could effectively suppress the cracks and pulverization found in the
liquid electrolyte. We demonstrated that the grooved <110> wafer
exhibited reversible (de)lithiation owing to fast lithium distribution
along the <110> thickness direction. The surface groove could
effectively
penetrate the electrolyte layer, yielding a stable interfacial resistance
and homogeneous alloying/dealloying processes during cycling. Our
silicon wafer electrode achieved an areal capacity of 10 mAh cm–2 at room temperature, which can be improved by further
optimization.