Diffusion current and its effect on noise in submicron MOSFETs

Obrecht, M.S.; Abou-Allam, E.; Manku, T.

doi:10.1109/16.987126

Cited by 22 publications

(7 citation statements)

References 12 publications

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“…This suppression is due to the increased electron occupation probabilities in the transport states, which violates the shot noise condition. In the short-channel MOSFETs, similarly to our results, a significant drain shot noise component has been reported [19]. For the long-channel MOSFETs, however, the drain noise power remains at approximately two-third of the equilibrium noise power [20][21][22].…”

Section: Simulation Results and Discussionsupporting

confidence: 85%

Investigation of noise in silicon nanowire transistors through quantum simulations

Park

Min

et al. 2008

2008 International Conference on Simulation of Semiconductor Processes and Devices

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A theoretical analysis of the drain current and its fluctuation in silicon nanowire transistors is proposed. We also suggest a general approach to the electronic noise calculation in the presence of a continuous distribution of phase-breaking scattering. Through our approach, the drain current noise characteristics with and without electron-phonon interactions are obtained at various bias conditions, and their physical origins are investigated. The non-equilibrium Green's function formalism is employed within the effective-mass and Hartree approximations. In addition, the intravalley and intervalley electron-phonon scattering mechanisms are included using the deformation potential theory and the self-consistent Born approximation.

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Section: Simulation Results and Discussionsupporting

confidence: 85%

Investigation of noise in silicon nanowire transistors through quantum simulations

Park

Min

et al. 2008

2008 International Conference on Simulation of Semiconductor Processes and Devices

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“…Similar to our results, a significant shot-noise component in the drain current has been also reported in the shortchannel MOSFETs experimentally. 27 For the long-channel MOSFETs, however, the drain current noise power in the saturation regime is known to remain at approximately two third of the equilibrium noise power. 1, 3,28 When interested in the suppression of shot noise, it is convenient to define the Fano factor as the ratio of the drain current noise to the full shot-noise level ͑S D / 2eI D ͒.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Quantum approach to electronic noise calculations in the presence of electron-phonon interactions

Park

Klimeck

2010

Phys. Rev. B

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A quantum-mechanical approach to the calculation of electronic noise for nanoscale devices is presented. This method is based on the nonequilibrium Green's-function formalism with electron-phonon scattering mechanisms and takes the effects of the Pauli exclusion principle and the long-range Coulomb interactions into account. As examples the drain current noise characteristics of silicon nanowire transistors at room temperature are simulated. The drain current noise in the saturation regime is primarily shot-noise dominant but is suppressed for higher gate biases due to the electron-electron correlation in the channel region. The role of electron-phonon interactions on noise, the transition from thermal to shot noise, and the physical origin of the shot-noise phenomenon are also investigated.

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“…The other source of shot noise is drain current I D at p-n junction potential barrier. Obrecht et al calculated that the shot noise become dominant at short channel length L about L ~ 0.5μm [24][25]. In this paper, we extend the shot noise model of p-n diode to drain current of n-MOSFET in weak inversion.…”

Section: Introductionmentioning

confidence: 87%

“…When positive drain bias V D is applied to n-MOSFET, electrons flow from n + -source to p-substrate beyond junction potential barrier and then drop into n + -drain. Therefore ONLY source-bulk junction generates junction shot noise [24][25]. As shown in the inset of Fig.…”

Section: Shot Noise In Mosfet Drain Currentmentioning

confidence: 97%

Shot Noise Modeling in Metal-Oxide-Semiconductor Field Effect Transistors under Sub-Threshold Condition

Isobe¹,

Hara²,

Navarro³

et al. 2007

IEICE Transactions on Electronics

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We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). In our approach, shot noise in MOSFETs is calculated by employing the two dimensional device simulator MEDICI in conjunction with the shot noise model of p-n junction. The accuracy of the noise model has been demonstrated by comparing simulation results with measured noise data of p-n diodes. The intensity of shot noise in various n-MOSFET devices under various bias conditions was estimated beyond GHz operational frequency by using our simulation scheme. At DC or lowfrequency region, sub-threshold current dominates the intensity of shot noise. Therefore, shot noise is independent on frequency in this region and its intensity is exponentially depends on V G , proportional to L-1 , and almost independent on V D. At highfrequency region above GHz frequency, on the other hand, shot noise intensity is frequency dependent and is quite larger than that of low-frequency region. In particular, the intensity of the RF shot noise is almost independent on L, V D and V G. This suggests that high-frequency shot noise intensity is decided only by the conditions of source-bulk junction.

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Diffusion current and its effect on noise in submicron MOSFETs

Cited by 22 publications

References 12 publications

Investigation of noise in silicon nanowire transistors through quantum simulations

Investigation of noise in silicon nanowire transistors through quantum simulations

Quantum approach to electronic noise calculations in the presence of electron-phonon interactions

Shot Noise Modeling in Metal-Oxide-Semiconductor Field Effect Transistors under Sub-Threshold Condition

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