Diffusion in Copper-rich Copper-Silicon Alloys

Iijima, Yoshiaki; Wakabayashi, Yoshihiro; Itoga, Toshihiko; Hirano, Ken‐ichi

doi:10.2320/matertrans1989.32.457

Cited by 9 publications

(13 citation statements)

References 16 publications

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“…The results show that the impurity diffusion coefficients of both Ga and Si are higher than the Cu tracer diffusion coefficients [25]. A similar trend was reported by both Iijima et al [15] and Minamino et al [12]. To further understand the atomic mechanism of the diffusing species, it is essential to compute the tracer diffusion coefficients because they eliminate the effect of the chemical driving force on the elements.…”

Section: (C) X-ray Diffraction Measurementssupporting

confidence: 56%

“…In the Cu-Ga system, the size misfit is larger than that in the Cu-Si system, but still in [35], the vacancy binding energy is reported to be larger in Cu-Si than in the Cu-Ga system. With respect to this, the tracer diffusion studies carried out in [15], as discussed in §1, on the other hand, indicated that there is only a weak interaction between a vacancy and an Si atom in the Cu matrix.…”

Section: (E) Impurity Vacancy Binding Energymentioning

confidence: 99%

“…However, the faster diffusion of Cu in Cu(Si) may, in addition, be related to a preferable interaction between Cu and the vacancies. This point was considered theoretically by Iijima et al [15] using the impurity and the tracer diffusion coefficient knowledge. The basic conclusion in [15] was that there is, in fact, a preferable interaction between Cu and vacancies.…”

Section: (F) Variation Of Elastic Modulus With Compositionmentioning

confidence: 99%

“…This point was considered theoretically by Iijima et al [15] using the impurity and the tracer diffusion coefficient knowledge. The basic conclusion in [15] was that there is, in fact, a preferable interaction between Cu and vacancies. Following the above discussion on the Cu(Si) case, there could be a preferable interaction between Ga atoms and the vacancies also in the Cu-Ga case.…”

Section: (F) Variation Of Elastic Modulus With Compositionmentioning

confidence: 99%

“…However, the intrinsic diffusion coefficients were not estimated. An extensive diffusion study was conducted by Iijima et al [15] at T = 627-877 • C using the Kirkendall markers that report Cu to be the faster diffusing species at all the compositions at 857 • C. The tracer diffusion coefficient of 67 Cu in pure Cu and alloys up to 1.8 at.% Si at 877 • C was measured by applying the radiotracer serial sectioning method. These were compared with the intrinsic diffusivity values of Cu and Si calculated from bulk diffusion experiments, suggesting a weak interaction between a vacancy and an Si atom in the Cu matrix.…”

Section: Introductionmentioning

confidence: 99%

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Role of different factors affecting interdiffusion in Cu(Ga) and Cu(Si) solid solutions

et al. 2014

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A detailed diffusion study was carried out on Cu(Ga) and Cu(Si) solid solutions in order to assess the role of different factors in the behaviour of the diffusing components. The faster diffusing species in the two systems, interdiffusion, intrinsic and impurity diffusion coefficients, are determined to facilitate the discussion. It was found that Cu was more mobile in the Cu-Si system, whereas Ga was the faster diffusing species in the Cu-Ga system. In both systems, the interdiffusion coefficients increased with increasing amount of solute (e.g. Si or Ga) in the matrix (Cu). Impurity diffusion coefficients for Si and Ga in Cu, found out by extrapolating interdiffusion coefficient data to zero composition of the solute, were both higher than the Cu tracer diffusion coefficient. These observed trends in diffusion behaviour could be rationalized by considering: (i) formation energies and concentration of vacancies, (ii) elastic moduli (indicating bond strengths) of the elements and (iii) the interaction parameters and the related thermodynamic factors. In summary, we have shown here that all the factors introduced in this paper should be considered simultaneously to understand interdiffusion in solid solutions.

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Section: (C) X-ray Diffraction Measurementssupporting

confidence: 56%

Section: (E) Impurity Vacancy Binding Energymentioning

confidence: 99%

Section: (F) Variation Of Elastic Modulus With Compositionmentioning

confidence: 99%

Section: (F) Variation Of Elastic Modulus With Compositionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Role of different factors affecting interdiffusion in Cu(Ga) and Cu(Si) solid solutions

et al. 2014

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Effects of Co/Si Atomic Ratio on Hardness and Electrical Conductivity of Cu–Co–Si Alloys

Zhang

Lei

et al. 2022

Adv Eng Mater

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Cu–Co–Si alloys are being intensively studied as alternative candidates for Cu–Ni–Si alloys for integrated circuit lead frames. However, the effects of different precipitate types on the comprehensive properties of Cu–Co–Si alloys are not clear. Herein, several Cu–Co–Si alloys with various precipitates (CoSi, Co2Si, and Co) are designed based on phase diagrams calculation. The designed alloys are melted, cold‐rolled, and aged to test the corresponding hardness and electrical conductivity (EC). X‐ray diffraction and transmission electron microscopy are utilized to analyze the precipitates generated in those alloys. In the alloys with Co/Si ≤ 1, the excess Si atoms are not easy to precipitate from the copper lattice after CoSi precipitation, which seriously damages the EC. Co‐precipitation in alloys with Co/Si > 2 is beneficial to improve EC without sacrificing hardness. According to thermodynamic calculation, precipitates in Cu‐1.62Co‐0.35Si (wt%) alloy with total elements between 1.5 and 2.0 wt% are all Co2Si and have the highest mass fraction in the equilibrium state. The different precipitates are highly dependent on the Co/Si atomic ratio and essential to Cu–Co–Si alloys’ mechanical and electrical performances.

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Size and Valence Effects on the Free Energy of Binding between a Vacancy and a Solute Atom in Cu, Ag, and Au

Iijima

1991

Physica Status Solidi (b)

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Diffusion in Copper-rich Copper-Silicon Alloys

Cited by 9 publications

References 16 publications

Role of different factors affecting interdiffusion in Cu(Ga) and Cu(Si) solid solutions

Role of different factors affecting interdiffusion in Cu(Ga) and Cu(Si) solid solutions

Effects of Co/Si Atomic Ratio on Hardness and Electrical Conductivity of Cu–Co–Si Alloys

Size and Valence Effects on the Free Energy of Binding between a Vacancy and a Solute Atom in Cu, Ag, and Au

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