Diffusion length measurements in p-HgCdTe using laser beam induced current

Redfern, D.A.; Thomas, John A.; Musca, Charles; Dell, John; Faraone, Lorenzo

doi:10.1007/bf02665858

Cited by 27 publications

(10 citation statements)

References 14 publications

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“…This suggests minority-carrier-diffusion lengths at 300 K on the order of 20 μm (n-type with N D = 5 × 10 15 cm −3 ) and 100 μm (p-type with N A = 5 × 10 15 cm −3 ). These estimates are consistent with the reported SWIR HgCdTe diffusion lengths [16], [17]. As a result, even with low Shockley-Read-Hall (SRH) lifetimes on the order of τ SRH = 10 μs, DLPH HgCdTe arrays at 10-, 15-, and 20-μm pitch (center-to-center separation) with implant r 0 = 2 μm satisfy the dense array conditions.…”

Section: Device Architecture and Materials Modelsupporting

confidence: 87%

Negative Differential Resistance in Dense Short Wave Infrared HgCdTe Planar Photodiode Arrays

Wichman

Pinkie

Bellotti

2015

IEEE Trans. Electron Devices

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A novel room-temperature negative differential resistance (NDR) effect is proposed, theoretically analyzed, and quantitatively modeled for short-wave infrared (SWIR) HgCdTe photodiode detectors in dense double-layer planar heterostructure arrays with a 2.5 µm cutoff at 300 K. The predicted NDR results from nonequilibrium minority carrier suppression-with associated Auger suppression and negative luminescence-imposed by dense array geometry under uniform reverse bias. Using three-dimensional quantitative modeling, we evaluate representative dark current-voltage characteristics at different array pitch values. The predicted dark current and NDR resulting from structural variations in junction radius are consistent with the analytic dense array lateral diffusion current suppression model. The NDR effect and its relation to geometric parameters should be considered when attempting to minimize dark current in high-temperature SWIR HgCdTe photodiode arrays.

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Section: Device Architecture and Materials Modelsupporting

confidence: 87%

Negative Differential Resistance in Dense Short Wave Infrared HgCdTe Planar Photodiode Arrays

Wichman

Pinkie

Bellotti

2015

IEEE Trans. Electron Devices

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“…When published values for the carrier mobility [9] were used in Equations (19) and (17) to solve for the diffusion length, the resulting values did not match measured results [10].…”

Section: Dark Currentmentioning

confidence: 91%

Design and simulation of infrared energy harvesting devices

Parameshwaran

Olah

Dutta

et al. 2011

Energy Harvesting and Storage: Materials, Devices, and Applications II

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Despite a recent focus in developing energy harvesting technologies from a variety of sources, no work has been done in capturing blackbody radiation from the surrounding environment. This work aims to extend semiconductor-based solar energy harvesting into the infrared (IR) range of the electromagnetic spectrum so as to take advantage of this blackbody radiation. We have investigated the use of mercury cadmium telluride (HgCdTe) p-n junction devices in order to achieve this goal. A device simulation tool, named MCT-SIM, was developed in order to obtain the photovoltaic characteristics of P+/N-/N+ structures exposed to blackbody radiation and an applied voltage bias. An IR energy harvesting system was developed and evaluated with the use of this tool. When this system is exposed to blackbody radiation at a temperature of 300 K, it generates a series-limited photocurrent of 28.115 mA/cm 2 ; this value can be increased through further optimization. Subsequent analysis shows that performance limitations of this system are due to the presence of a large intrinsic carrier concentration and associated Auger effects within the absorbing layer of HgCdTe.

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“…These estimates are consistent with reported, albeit widely varying, SWIR HgCdTe diffusion lengths. 12,13 As a result, DLPH HgCdTe arrays at 10 lm, 15 lm, and 20 lm pitch (center-tocenter separation) with implant r 0 = 2 lm should satisfy the dense array conditions for intrinsically limited lifetimes. Table II summarizes various bulk material parameters used in the device model based on the foregoing analytic models, using a conservative |F 1 F 2 | = 0.20.…”

Section: Materials Modelmentioning

confidence: 98%

Dense Array Effects in SWIR HgCdTe Photodetecting Arrays

Wichman

Pinkie

Bellotti

2015

Journal of Elec Materi

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This paper presents results from three-dimensional quantitative modeling on dense, moderately doped [N D (N A ) = 5 9 10 15 cm À3 ] short-wave infrared (SWIR) p + n and n + p Hg 1Àx Cd x Te double planar heterostructure photodetecting arrays with absorber x = 0.451 and cap x = 0.55. At uniform reverse bias, the competition for minority carriers between closely spaced diodes preserves densities below equilibrium levels throughout the absorber. This carrier suppression has several consequences in addition to suppressing dark current by constraining the minority-carrier gradients at each diode junction. First, the dense arrays maintain volume-average negative net radiative recombination rates (negative luminescence) roughly an order of magnitude larger than comparably biased isolated diodes. Second, the negative excess minority-carrier densities suppress the volume-average net Auger recombination rate by roughly an order of magnitude in dense n-type HgCdTe arrays compared with a single diode. Third, the long minority electron diffusion lengths in the p-type HgCdTe absorber not only suppress lateral diffusion currents, but do so in a manner that provides negative differential resistance. By suppressing intrinsic recombination rates, or lateral diffusion currents, each effect can contribute to increasing R 0 A products in SWIR HgCdTe dense arrays. These effects should be considered when optimizing device structures for pitch, thickness, feature size, doping, and bias points.

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Diffusion length measurements in p-HgCdTe using laser beam induced current

Cited by 27 publications

References 14 publications

Negative Differential Resistance in Dense Short Wave Infrared HgCdTe Planar Photodiode Arrays

Negative Differential Resistance in Dense Short Wave Infrared HgCdTe Planar Photodiode Arrays

Design and simulation of infrared energy harvesting devices

Dense Array Effects in SWIR HgCdTe Photodetecting Arrays

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