Diffusion Masking of Silicon Nitride and Silicon Oxynitride Films on Si

Heumann, F.K.; Brown, D.M.; Mets, E. J.

doi:10.1149/1.2411034

Cited by 26 publications

(8 citation statements)

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“…A shift of an absorption peak in silicon oxinitride was previously reported by Brown et at. (1,6). According to their data, this u n iform silicon nitride film, which only shows the absorption peak at 11.2 ~m, would have a composition of 85% nitride and 15% oxide on the average if the band shift could be used in composition calibration.…”

Section: Resultsmentioning

confidence: 99%

Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with Nitrogen

Ito

Hijiya

Nozaki

et al. 1978

J. Electrochem. Soc.

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Very thin uniform silicon nitride films less than IOOA have been obtained on silicon wafers by direct thermal reaction with nitrogen at temperatures ranging from 1200 ~ to 1300~ Small amounts of water or oxygen in reaction mixture caused vapor etching which gave rise to local crystallization. By eliminating both from the reaction ambient to less than 1 ppm, amorphous silicon nitride films can be del=osited. These films have been found to have properties similar to those of CVD Si3N4 by investigations of Auger electron spectroscopy, infrared spectroscopy, and ellipsometry. Remarkable masking effects of the films against oxidation and phosphorus diffusion have been found. * Electrochemical Society Active Member.

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Section: Resultsmentioning

confidence: 99%

Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with Nitrogen

Ito

Hijiya

Nozaki

et al. 1978

J. Electrochem. Soc.

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“…Anhydrous ammonia gas hardly provides any oxidant species to silicon substrates. 4(b) and calibration data taken from CVD oxynitride films (26,27). Some researchers have tried to heat oxidized silicon wafers in ammonia gas for other purposes (14,25), but the direct conversion of SiO2 to nitride was never pointed out in their reports.…”

Section: Discussionmentioning

confidence: 99%

Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia Gas

Ito

Nozaki

Ishikawa

1980

J. Electrochem. Soc.

121

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It has been found that SiO2 can be converted directly to silicon nitride or oxynitride at the surface of SiO2 films by heating oxidized silicon wafers in anhydrous ammonia gas. At temperatures above 9O0~ nitrided SiO2 films have graded composites with respect to their nitrogen fraction. This analysis was performed by AES, infrared transmittance spectroscopy, and etch-rate profiles. Nitrided surface regions on SiO2 films, in which the nitride fraction ranged from 10% to 50%, showed remarkable masking effects against subsequent oxidation at high temperatures. * Electrochemical Society Active Member.

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“…To prepare GraNR-based electrical devices, we used 100 nm Si 3 N 4 on silicon, which provided an expanded thermal window for GraNR growth without dielectric degradation 39 . The electrical performance of the GraNRs synthesized utilizing SGP was measured by fabricating three-terminal back-gated FETs (Fig.…”

Section: Tem Characterization Of Granr Structuresmentioning

confidence: 99%

Direct growth of aligned graphitic nanoribbons from a DNA template by chemical vapour deposition

et al. 2013

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Graphene, laterally confined within narrow ribbons, exhibits a bandgap and is envisioned as a next-generation material for high-performance electronics. To take advantage of this phenomenon, there is a critical need to develop methodologies that result in graphene ribbons o10 nm in width. Here we report the use of metal salts infused within stretched DNA as catalysts to grow nanoscopic graphitic nanoribbons. The nanoribbons are termed graphitic as they have been determined to consist of regions of sp 2 and sp 3 character. The nanoscopic graphitic nanoribbons are micrometres in length, o10 nm in width, and take on the shape of the DNA template. The DNA strand is converted to a graphitic nanoribbon by utilizing chemical vapour deposition conditions. Depending on the growth conditions, metallic or semiconducting graphitic nanoribbons are formed. Improvements in the growth method have potential to lead to bottom-up synthesis of pristine single-layer graphene nanoribbons.

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Diffusion Masking of Silicon Nitride and Silicon Oxynitride Films on Si

Cited by 26 publications

References 0 publications

Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with Nitrogen

Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with Nitrogen

Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia Gas

Direct growth of aligned graphitic nanoribbons from a DNA template by chemical vapour deposition

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