Diffusion of<i>n</i>-type dopants in germanium

Chroneos, Alexander; Bracht, H.

doi:10.1063/1.4838215

Cited by 165 publications

(125 citation statements)

References 161 publications

(325 reference statements)

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“…In previous investigations it was shown that the introduction of large isovalent dopants such as Sn can impact dopant-defect interactions in Ge (and in Si) [12,19]. In the present study we have employed density functional theory (DFT) modeling to investigate the structure of the C i O i defect in Ge and its interaction with isovalent dopants such as Si or Sn.…”

Section: Introductionmentioning

confidence: 99%

“…For decades the characteristic dimensions of devices were reduced and this has constituted the importance of point defects and defect clusters increasingly important as they can impact materials properties. Examples include the need to reduce the concentration of vacancy-oxygen pairs (VO or A-centers) and/or the carbon-related defects (such as C i O i (Si I ) n , n = 1, 2,…) in Si [13][14][15][16][17][18][19] and the requirement to contain the fast n-type dopant diffusion in Ge [2,10,12].…”

Section: Introductionmentioning

confidence: 99%

“…Additionally, high concentrations have been incorporated as C has been used to reduce the n-type copant diffusion in Ge [12]. The oxygen dimer and the A-center are the main oxygen-related defects in Ge [1,14,22,23].…”

Section: Introductionmentioning

confidence: 99%

“…Although germanium (Ge) was implemented in the first transistor commencing the solid state electronics era silicon (Si) prevailed for applications in microelectronics, photovoltaics and sensors for many decades due to its high quality crystal growth technology and advantageous native oxide [1][2][3][4][5][6][7][8][9][10][11][12]. In the past few years materials with advantageous physical properties (e.g.…”

Section: Introductionmentioning

confidence: 99%

“…In the past few years materials with advantageous physical properties (e.g. higher carrier mobilities, low dopant activation temperatures and smaller band-gap) such as germanium (Ge) are becoming increasingly important [1][2][3][4][5][6][7][8][9][10][11][12]. The consideration of alternative substrates is mainly due to the high-k gate dielectric materials, which have effectively eliminated the requirement of a good quality native oxide in advanced nanoelectronic devices [1].…”

Section: Introductionmentioning

confidence: 99%

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Isovalent doping and the CiOi defect in germanium

Christopoulos

Sgourou

Вовк

et al. 2017

J Mater Sci: Mater Electron

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Oxygen-carbon defects have been studied for decades in silicon but are less well established in germanium. In the present study we employ density functional theory calculations to study the structure of the C i O i defect in germanium. Additionally, we investigate the interaction the C i O i defect with isovalent dopants such as silicon and tin. It is calculated that the C i O i defects will preferentially form near isovalent dopants in germanium. Interestingly the structure of the dopant-C i O i defects is different with the Sn residing next to the O i whereas the Si atom bonds with the C i . The differences in the structure of C i O i defects in the vicinity of isovalent dopants are discussed.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Isovalent doping and the CiOi defect in germanium

Christopoulos

Sgourou

Вовк

et al. 2017

J Mater Sci: Mater Electron

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Laser‐Assisted Wet‐Chemical Doping of Sintered Si and Ge Nanoparticle Films

Stoib

Greppmair

Petermann

et al. 2015

Adv Elect Materials

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Doped thin films of group‐IV semiconductors can be fabricated using the adsorption of dopant species from a liquid source to a precursor nanoparticle film, followed by laser‐sintering to incorporate and activate the dopants in the sintered thin film. A detailed study of the doping of germanium films with arsenic reveals diffusion of dopants into the film and their adsorption to the nanoparticle surface as kinetically governing steps, benefiting from the large internal surface area of the nanoparticle film. The resulting charge carrier concentration can be adjusted by the internal surface area via the nanoparticle diameter, by controlling the dopant concentration in the liquid, and by the immersion time and temperature. It is shown that the method can be successfully transferred to silicon and silicon–germanium alloy films using group‐III and ‐V elements, which lead to p‐ and n‐type conductivity, respectively. Atomic dopant concentrations above 1020 cm−3 can be realized by laser‐sintering, which are electrically active to a high extent and lead to effective conductivities well above 10 S cm–1 in the mesoporous films is investigated here. The method allows flexible printing of devices using inks for the nanoparticles and the dopant and avoids toxic substances for the doping of nanoparticles in the gas phase.

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Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures

Orejuela,

García‐Tabares,

Rey‐Stolle

et al. 2024

Adv Elect Materials

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Germanium is reemerging as a prominent material in the semiconductor field, particularly for electronic applications, photonics, photovoltaics, and thermophotovoltaics. Its combination with III‐V compound semiconductors through epitaxial growth by metal‐organic vapor phase epitaxy (MOVPE) is instrumental and thus, the comprehension of the sequential stages in such epitaxial processes is of great importance. During the deposition of GaAs on p‐type Ge, the formation of n/p junctions occurs when As diffuses into Ge. It is found that this formation begins in the so‐called AsH3 preexposure where Ge substrate is first exposed to AsH3. Also important is the fact that both free carrier profiles and As profiles indicate that prolonged AsH3 preexposure times lead to deeper diffusion depths for the same process time. This effect is concomitant with the degradation of the Ge surface morphology, characterized by higher roughness as the AsH3 preexposure duration is extended. Unlike ion‐implanted As in Ge, which shows a quadratic dependent diffusivity, this MOVPE investigation using AsH3 indicates a linear relationship, consistent with Takenaka et al.’s MOVPE study using TBAs. The analysis of As profiles alongside simulations, with and without subsequent GaAs epitaxy, suggests the generation of Ge vacancies during the process, contributing to deeper As diffusion.

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Diffusion ofn-type dopants in germanium

Cited by 165 publications

References 161 publications

Isovalent doping and the CiOi defect in germanium

Isovalent doping and the CiOi defect in germanium

Laser‐Assisted Wet‐Chemical Doping of Sintered Si and Ge Nanoparticle Films

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures

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