Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN

Romanov, I. S.; Prudaev, I. А.; Brudnyi, V. N.

doi:10.1007/s11182-018-1383-9

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…[91] Nonradiative SRH recombination rate is temperaturedependent, and this results in an increase in SRH losses at high temperatures. [50] The rate of SRH recombination may also change when the devices are subject to degradation: the energy released by SRH recombination events may promote the generation of further defects in the device [57,92,93] or locally increase lattice temperature, in a positive-feedback loop.…”

Section: Thermally Activated Processesmentioning

confidence: 99%

Defects and Reliability of GaN‐Based LEDs: Review and Perspectives

Buffolo

Caria

Piva

et al. 2022

Physica Status Solidi (a)

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Herein, the main factors and mechanisms that limit the reliability of gallium nitride (GaN)-based light-emitting diodes (LEDs) are reviewed. An overview of the defects characterization techniques most relevant for wide-bandgap diodes is provided first. Then, by introducing a catalogue of traps and deep levels in GaN and computer-aided simulations, it is shown which types of defects are more detrimental for the radiative efficiency of the devices. Gradual degradation mechanisms are analyzed in terms of their specific driving force: a separate analysis of recombination-enhanced processes, driven by nonradiative recombination and/or temperature-assisted processes, such as defects or impurity diffusion, is presented. The most common lifetime estimation methods and standards adopted for solid-state luminaires are also reported on. Finally, the paper concludes by examining which are the typical degradation and failure mechanisms exhibited by LEDs submitted to electrical overstress.

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Section: Thermally Activated Processesmentioning

confidence: 99%

Defects and Reliability of GaN‐Based LEDs: Review and Perspectives

Buffolo

Caria

Piva

et al. 2022

Physica Status Solidi (a)

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Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process

Renso

Santi

Caria

et al. 2020

Journal of Applied Physics

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This paper provides insights into the degradation of InGaN-based LEDs by presenting a comprehensive analysis carried out on devices having two quantum wells (QWs) with different emission wavelengths (495 nm and 405 nm). Two different configurations are considered: one with the 495 nm QW closer to the p-side and one with the 495 nm QW closer to the n-side. The original results collected within this work indicate that (i) during stress, the devices show an increase in defect-related leakage both in reverse and low-forward voltage ranges: current increases with the square-root of stress time, indicating the presence of a diffusion process; (ii) stress induces a decrease in the luminescence signal emitted by both quantum wells: the drop in luminescence is stronger when measurements are carried out at low current levels, indicating that degradation is due to the generation of Shockley–Read–Hall recombination centers; (iii) remarkably, the degradation rate is linearly dependent on the luminescence signal emitted before stress by the well, indicating that carrier density impacts on degradation; and (iv) the optical degradation rate has a linear dependence on the stress current density. The results strongly suggest the existence of a recombination-driven degradation process: the possible role of Shockley–Read–Hall and Auger recombination is discussed. The properties of the defects involved in the degradation process are described through steady-state photocapacitance measurements.

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Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD

Hagar

Abdelhamid

Routh

et al. 2022

Applied Physics Letters

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Tunnel junctions (TJs) have recently been proposed as a solution for several III-nitride current problems and to enhance new structures. Reported III-nitride TJs grown by metalorganic chemical vapor deposition (MOCVD) resulted in backward diodes with rectifying behavior in forward bias, even with Mg and Si doping in 1020 cm−3. This behavior limits applications in several device structures. We report a TJ structure based on p+In0.15Ga0.85N/n+In0.05Ga0.95N, where the n-side of the junction is co-doped with Si and Mg and with electron and hole concentrations in the mid-1019 cm−3 for both the n and p dopants. Co-doping creates deep levels within the bandgap that enhances tunneling under forward biased conditions. The TJ structure was investigated on both GaN substrates and InGaN templates to study the impact of strain on the TJ I–V characteristics. The resulting TJ I–V and resistivities reported indicate the potential for this TJ approach in several device structures based on III-nitrides. We are not aware of any previous MOCVD grown TJs that show Ohmic performance in both forward and reverse biases.

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Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN

Cited by 3 publications

References 8 publications

Defects and Reliability of GaN‐Based LEDs: Review and Perspectives

Defects and Reliability of GaN‐Based LEDs: Review and Perspectives

Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process

Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD

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