Diffusion of phosphorus and arsenic using ampoule-tube method on undoped ZnO thin films and electrical and optical properties of P-type ZnO thin films

So, Soon-Jin; Park, Choon-Bae

doi:10.1016/j.jcrysgro.2005.09.018

Cited by 26 publications

(10 citation statements)

References 8 publications

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“…[21][22][23][24] Compared with the PL spectrum of undoped ZnO in the photon energy range from 3.1 to 3.3 eV, the p-type P-doped ZnO shows an additional emission peak around 3.17 eV, which is more intense than the 3.26 eV emission peak. So and Park 25 investigated the thermal diffusion of P on ZnO in a vacuum ampoule tube and found a similar peak around 3.16 eV in P-doped ZnO films. Therefore, it can be deduced that this strong emission peak at 3.17 eV is a result of P doping, and hence it is likely that this peak indicates the existence of a P-related acceptor level.…”

Section: Ping Wumentioning

confidence: 88%

ZnO homojunctions grown by cosputtering ZnO and Zn3P2 targets

Gong

Chor

et al. 2006

Applied Physics Letters

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We have demonstrated the growth and control of the conductivity type (n or p) of ZnO doped with phosphorus (P). The success of p-type and n-type P-doped ZnO is confirmed by Hall effect measurements, Seebeck measurements, and the realization of p-n homojunctions. The room temperature carrier concentration, mobility, and resistivity of the as-deposited p-type P-doped ZnO are 2.8×1017cm−3, 0.341cm2∕Vs, and 65.4Ωcm, respectively. The P-doped ZnO p-n homojunctions have a turn-on voltage of about 3.4V. Photoluminescence spectra show that the P-doped films may have a shallow accepter energy level.

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Section: Ping Wumentioning

confidence: 88%

ZnO homojunctions grown by cosputtering ZnO and Zn3P2 targets

Gong

Chor

et al. 2006

Applied Physics Letters

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“…These properties of ZnO which is a II-VI compound have received considerable attention, and various n-ZnO based single heterojunction devices have been fabricated using different p-type materials [4]. There are several methods for producing ZnO films: chemical vapor deposition, ionized cluster-beam deposition, pulsed-laser deposition, dc sputtering, magnetron sputtering and spray pyrolysis [5,6]. Of these, the spray pyrolysis method has increased interest in the preparation of thin films in last years due to some advantages in comparison to the other methods.…”

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confidence: 99%

Electrical and optical properties of undoped and In‐doped ZnO thin films

Çağlar

Ilıcan

2007

Phys. Status Solidi (c)

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. Hk, 68.55.Jk, 72.80.Ey Transparent conducting undoped and indium-doped zinc oxide (ZnO) thin films have been deposited by the spray pyrolysis method at 350 °C substrate temperature. X-ray diffraction spectra of the films have shown that the films are polycrystalline and hexagonal wurtzite in structure. The average optical transmittance of 1% indium-doped ZnO thin films was over 84% in the visible range. The direct band gap value of the undoped ZnO film was calculated. Electrical conductivity measurement of Ag-ZnO:In-Ag structures have been carried out using the two-probe method in dark, in the range of temperature from 90 to 320 K. The conductivity of undoped and indium-doped ZnO films increases with increase in temperature. The incorporation of indium in the ZnO film enhanced the conductivity. The conductivity of 1 at.% In-doped film is higher than undoped ZnO at room temperature. The activation energies E a values in the range of 90-320 K temperatures were also determined. -3]. Among the TCO materials available, zinc oxide films doped with appropriate impurities, usually the group-III elements such as B, Al, Ga and In, present, due to their good electrical and optical properties, an attractive alternative for indium tin oxide (ITO), because they are nontoxic and less expensive. An outstanding characteristic of ZnO thin film is that its electrical properties can be changed from insulator through n-type semiconductor to metal by controlling the doping level. These properties of ZnO which is a II-VI compound have received considerable attention, and various n-ZnO based single heterojunction devices have been fabricated using different p-type materials [4]. There are several methods for producing ZnO films: chemical vapor deposition, ionized cluster-beam deposition, pulsed-laser deposition, dc sputtering, magnetron sputtering and spray pyrolysis [5,6]. Of these, the spray pyrolysis method has increased interest in the preparation of thin films in last years due to some advantages in comparison to the other methods. It is simple, non-expensive method initially developed for conductive oxide deposition on solar cells applications and flexible for process modifications that allows large area deposition. Zinc oxide, a direct bandgap (E g = 3.3 eV at 300 K) semiconductor with large exciton binding energy of 60 meV is a promising material for fabrication of high efficiency ultraviolet light-emitting devices [4].

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“…[2][3][4][5][6][7][8][9] In addition, rectifying I-V behavior was observed for diode employing phosphorus-doped p-type ZnO with n-type materials, further confirming the p-type conduction by phosphorus doping. [10][11][12][13][14] However, the reliability of phosphorus p-type doping is still problematic.…”

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confidence: 95%

“…4,6,7,[17][18][19][20][21][22][23][24] 1. Phosphorus-doped ZnO growth rate as a function of Zn cell temperature. Three regions were identified: Region I, oxygen-extremely-rich region ͑n type͒; region II, oxygen-rich region ͑p type͒; and region III, stoichiometric and Zn-rich region ͑n type͒.…”

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Donor and acceptor competitions in phosphorus-doped ZnO

Xiu

Zheng

Mandalapu

et al. 2006

Applied Physics Letters

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Phosphorus-doped ZnO films were grown by molecular-beam epitaxy with a GaP effusion cell as dopant source. Three growth regions were identified to obtain ZnO films with different conduction types. In the oxygen-extremely-rich region, phosphorus-doped ZnO films show n-type conduction with dominant donor-bound excitons (DX0) in the low-temperature photoluminescence (PL) spectra. In the oxygen-rich region, a growth window was found to generate p-type ZnO films. The PL spectra show evident competitions between DX0 and acceptor-bound excitons (AX0). In the stoichiometric and Zn-rich region, ZnO films are n-type with dominant DX0 emissions. Thus, phosphorus doping is amphoteric, having the tendency to form both donors and acceptors in ZnO.

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Diffusion of phosphorus and arsenic using ampoule-tube method on undoped ZnO thin films and electrical and optical properties of P-type ZnO thin films

Cited by 26 publications

References 8 publications

ZnO homojunctions grown by cosputtering ZnO and Zn3P2 targets

ZnO homojunctions grown by cosputtering ZnO and Zn3P2 targets

Electrical and optical properties of undoped and In‐doped ZnO thin films

Donor and acceptor competitions in phosphorus-doped ZnO

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