Diffusion of silicon in Pd2Si during silicide formation

Comrie, C.M.; Egan, J. M.

doi:10.1063/1.341880

Cited by 15 publications

(1 citation statement)

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“…Another system which shows a variation in diffusing species during growth is that of Pd 2 Si formation, where the initial stage of Pd 2 Si formation is dominated by Pd diffusion but the subsequent growth is entirely due to Si [27]. Isothermal annealing at various temperatures ranging from 275 to 375°C all showed the same behaviour [28] suggesting that the variation observed during the early stage is unlikely to arise from any variation in the specific temperature at which the growth took place.…”

Section: Discussionmentioning

confidence: 64%

Determination of the dominant diffusing species during nickel and palladium germanide formation

et al. 2012

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Section: Discussionmentioning

confidence: 64%

Determination of the dominant diffusing species during nickel and palladium germanide formation

et al. 2012

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Exploration of High‐Pressure Annealing and Microwave Annealing in Palladium Germano‐Silicide Formation for Si_0.8Ge_0.2‐Based Complementary Metal‐Oxide–Semiconductor Transistors

Kuo,

Current

2024

Adv Eng Mater

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In this study, forming palladium germano‐silicide on Si0.8Ge0.2‐based complementary metal‐oxide semiconductor (CMOS) transistors by high‐pressure annealing compared to microwave annealing is investigated. Boron‐doped Si0.8Ge0.2 layers are epitaxially grown on n‐type Si wafers, achieving an initial boron concentration of 5 × 1015 cm−3, which increase to ≈6 × 1020 cm−3 after microwave annealing, reducing sheet resistance. Palladium is deposited using electron beam evaporation to form a 15 nm layer on Si0.8Ge0.2 (200 nm)/Si (100) substrates. High‐pressure annealing is conducted from 300 to 500 °C in N2 ambiance at 5 kg cm−3, while microwave annealing is performed at 5.8 GHz and 1800–3000 W for 100 s. X‐ray diffractometer confirms high‐intensity Pd2Si phase formation, but scanning electron microscope and atomic force microscope reveal increased surface roughness and clustering after annealing. Sheet resistance increases from 10.35 Ω sq−1 (unannealed) to 131.8 Ω sq−1 (high‐pressure annealing at 300 °C) and 85.8 Ω sq−1 (microwave annealing at 1800 W). In these results, the trade‐offs between annealing methods and metal choices for achieving low contact resistance and Schottky barrier heights in p‐type Si0.8Ge0.2 CMOS circuits are highlighted.

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Pt2Al3 formation on evaporated and large-grained Al substrates

Nicolet

1988

Phys. Stat. Sol. (a)

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The growth of Pt,AI, during thermally induced Pt-A1 reaction is studied with two types of samples: bilayered thin films (Pt/AI) and Pt thin film on large-grained A1 substrate (Pt/((Al))). The same behavior upon vacuum furnace annealing is observed for both types of sample configurations : Pt,AI, forms as the initial growing phase in a laterally uniform fashion, following a diffusionlimited process. A parabolic growth law of the form z2 = kt is obtained in the temperature range 200 t o 300 "C, where x is the thickness of the growing Pt,AI, layer, t is the annealing duration, and the growth constant k is given by k = 1.02 x lo-, (cmz/s) exp ((-1.15 0.1) eV/kBT). The morphological rearrangements in the Al thin film during reaction is observed and discussed. The common Pt,AI, growth kinetics on the two types of Al substrates suggests that neither the microstructure of nor the morphological rearrangements in the A1 layer affect the Pt,AI, growth significantly.Das Wachstum von Pt,AI, wahrend der thermisch induzierten Reaktion von Pt-A1 wird a n zwei Probenarten untersucht. Doppelschichten von dunnen Filmen (Pt/Al) und diinne Pt-Filme auf einer grofikornigen Al-Unterlage (Ptj((A1))). Beide Probenarten zeigen dasselbe Verhalten: Pt,AI, erscheint als erste Phase, die in lateral gleichformiger Weise nach einem diffusionsbeschrankten Vorgang wachst. Das Wachstum folgt dem Gesetz x2 = kt im Temperaturbereich von 200 bis 300 O C , wo z die Dicke der wachsenden Pt,Al,-Schicht ist, t die Dauer der Erwarmung, und die Wachstumskonstante k den Wert l,02 x LO-* (cmz/s) exp ((-1,15 f 0 , l ) eVjkgT) hat. Die morphologischen Umwandlungen im Al-Film wahrend der Reaktion werden diskutiert. Die gemeinsame Wachstumskinetik fur beide Al-Unterlagen weist darauf hin, dalJ weder die Mikrostruktur noch die morphologischen Veranderungen des A l das Wachstum von Pt,AI, wesentlich beeinflussen.

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Diffusion of silicon in Pd2Si during silicide formation

Cited by 15 publications

References 10 publications

Determination of the dominant diffusing species during nickel and palladium germanide formation

Determination of the dominant diffusing species during nickel and palladium germanide formation

Exploration of High‐Pressure Annealing and Microwave Annealing in Palladium Germano‐Silicide Formation for Si_0.8Ge_0.2‐Based Complementary Metal‐Oxide–Semiconductor Transistors

Pt2Al3 formation on evaporated and large-grained Al substrates

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Diffusion of silicon in Pd2Si during silicide formation

Cited by 15 publications

References 10 publications

Determination of the dominant diffusing species during nickel and palladium germanide formation

Determination of the dominant diffusing species during nickel and palladium germanide formation

Exploration of High‐Pressure Annealing and Microwave Annealing in Palladium Germano‐Silicide Formation for Si0.8Ge0.2‐Based Complementary Metal‐Oxide–Semiconductor Transistors

Pt2Al3 formation on evaporated and large-grained Al substrates

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Exploration of High‐Pressure Annealing and Microwave Annealing in Palladium Germano‐Silicide Formation for Si_0.8Ge_0.2‐Based Complementary Metal‐Oxide–Semiconductor Transistors