Diffusion of zinc in gallium arsenide

Cunnell, F A; Gooch, C.

doi:10.1016/0022-3697(60)90109-8

Cited by 127 publications

(20 citation statements)

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“…1. The diffusion coefficient for the migration of the minimum in the concentration profile was approximated by D = x~/t [ 1 ] where x is the position of the minimum relative to the initial surface, and t is the time of the diffusion anneal in seconds. A value of Dmin : 4 x 10 -11 cm~/sec was obtained.…”

Section: Resultsmentioning

confidence: 99%

The Diffusion of Nickel and Chlorine into P-Type Lead Telluride at 700°C

George¹,

Wagner²

1968

J. Electrochem. Soc.

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Section: Resultsmentioning

confidence: 99%

The Diffusion of Nickel and Chlorine into P-Type Lead Telluride at 700°C

George¹,

Wagner²

1968

J. Electrochem. Soc.

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“…Boltaks et al [ll] used a method very similar to that of Cunnell and Gooch [3], the only point of difference apparently being that Boltaks et al filled their diffusion ampoules with argon (at an unspecified pressure), instead of using an evacuated ampoule.…”

Section: The Effect Of Diffusion Timementioning

confidence: 99%

“…Cunnell and Gooch [3] found from p-n junction depth measurements that the junction depth was proportional t o t1I2 for a given surface concentration and diffusion temperature wherc t was the diffusion time. This means that the Zn concentration c(x, t ) a t distance x from the crystal surface after time t is solely a function of the parameter %/@ for a given diffusion temperature and surface concentration (see Section 3.1.3).…”

Section: The Effect Of Diffusion Timementioning

confidence: 99%

The Chemical and Isoconcentration Diffusion of Zn in AlSb

Showan

Shaw

1969

Physica Status Solidi (b)

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The chemical diffusion of Zn in AlSb has been investigated as a function of temperature in the range 650 to 933 "C and as a function of Zn surface concentration. The diffusion coefficient is found to be concentration-dependent and shows a behaviour similar to that observed in GaAs, Gap, and InP. Isoconcentration diffusion of Zn a t 933 "C in AlSb is found to be strongly concentration-dependent. Quenching of Zn-diffused samples shows that the substitutional Zn is a single-level acceptor which is completely ionized a t the diffusion temperature. It is concluded that the Longini model provides a satisfactory interpretation of the diffusion processes. Substitutional Zn in AlSb is also found to show retrograde solubility.Die chemische Diffusion von Zn in AlSb wurde als Funktion der Temperatur im Bereich 650 bis 933 O C und der Oberfllichenkonzentration von Zn untersucht. Es wird gefunden, daS der Diffusionskoeffizient konzentrationsabhangig ist und ein Verhalten zeigt, das dem fur GaAs, GaP und I n P beobachteten ahnlich ist. Isokonzentrationsdiffusion von Zn bei 933 O C in AlSb ist stark konzentrationsabhangig. Tempern von Proben mit Zn-Diffusion zeigt, daD Zn auf Gitterplatz ein einfacher Akzeptor ist, der bei der Diffusionstemperatur vollstandig ionisiert ist. Es wird angenommen, daS das Model1 von Longini die Diffusionsprozesse befriedigend beschreiben kann. Fur Zn auf Gitterplatz in AlSb wird ebenfalls eine riicklaufige Loslichkeit gefunden.

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“…7 The intensity of the gamma-ray field was 1543 GABRYSH, KENNEDY, EYRING, AND JOHNSON 8 The white sapphire specimens were exposed for 1 h; the ruby had three successive 30-min exposures on the same day. Both the sapphire and ruby specimens remained in a clear-plastic box container during a period of 27 months.…”

Section: Samplesmentioning

confidence: 99%

Effects of High Pressure on the Thermoluminescence ofγ-Irradiatedα-Al2
Gabrysh
¹
,
Kennedy
²
,
Eyring
³

et al. 1963
Phys. Rev.
19
0
0
0
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Thermoluminescent properties are reported here on 7-irradiated a-^Oz and ruby single crystals, before and after the specimens were subjected to hydrostatic pressures of 24 kbar for 255 min at 773°K and at 30 and 40 kbar for 30-min periods at room temperature. Glow-curve changes and peak resolutions occur for white sapphire in the temperature range of 340 to 623 °K. The graphs show regularity with regard to glowpeak temperatures and their sensitivity to higher annealing temperatures after pressure. A single pressuresensitive peak at ^503 °K appears in ruby after applying pressure or after 7 irradiation. Activation energies for several peaks as calculated from the results are also given.

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Diffusion of zinc in gallium arsenide

Cited by 127 publications

References 1 publication

The Diffusion of Nickel and Chlorine into P-Type Lead Telluride at 700°C

The Diffusion of Nickel and Chlorine into P-Type Lead Telluride at 700°C

The Chemical and Isoconcentration Diffusion of Zn in AlSb

Effects of High Pressure on the Thermoluminescence ofγ-Irradiatedα-Al2
Gabrysh
¹
,
Kennedy
²
,
Eyring
³

et al. 1963
Phys. Rev.
19
0
0
0
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Diffusion of zinc in gallium arsenide

Cited by 127 publications

References 1 publication

The Diffusion of Nickel and Chlorine into P-Type Lead Telluride at 700°C

The Diffusion of Nickel and Chlorine into P-Type Lead Telluride at 700°C

The Chemical and Isoconcentration Diffusion of Zn in AlSb

Effects of High Pressure on the Thermoluminescence ofγ-Irradiatedα-Al2Gabrysh1, Kennedy2, Eyring3 et al. 1963Phys. Rev.19000View full textAdd to dashboardCite

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Effects of High Pressure on the Thermoluminescence ofγ-Irradiatedα-Al2
Gabrysh
¹
,
Kennedy
²
,
Eyring
³

et al. 1963
Phys. Rev.
19
0
0
0
View full text Add to dashboard Cite