Diffusion of Zn acceptors during MOVPE of InP

Glade, M.; Hergeth, J.; Grützmacher, Detlev; Masseli, K.; Balk, P.

doi:10.1016/0022-0248(91)90221-p

Cited by 34 publications

(8 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In InP, Zn is extensively used for forming optoelectronic devices such as semiconductor lasers and heterojunction bipolar transistors. The diffusion coefficient of Zn is small for unintentional diffusion during epitaxial growth, [1][2][3][4] in contrast to intentional diffusion performed with the sealed ampoule 5 or the open tube technique. 6 However, Zn diffuses still faster than an n-type dopant.…”

Section: Introductionmentioning

confidence: 97%

Control of double diffusion front unintentionally penetrated from a Zn doped InP layer during metalorganic vapor phase epitaxy

Otsuka

Kito

Ishino

et al. 1998

Journal of Applied Physics

View full text Add to dashboard Cite

Metalorganic vapor phase diffusion using DMZn Part II: Determination of the interstitial zinc charge state from secondary ion mass spectroscopy measurements using the Boltzmann-Matano technique J. Vac. Sci. Technol. A 22, 916 (2004); 10.1116/1.1640392 Diffusion during metalorganic vapor-phase epitaxy on V-groove patterned substrates Unintentional Zn diffusion during metalorganic vapor phase epitaxy causes serious damages in semiconductor devices. In this work, profiles of unintentionally diffused Zn atoms from a p-InP layer to the adjoining InP substrate during growth of the p-InP layer are measured by secondary ion mass spectrometry. Zn diffusion profiles with a double diffusion front, which is composed of a shallow front with high Zn concentration and a deep front with low Zn concentration, are investigated as an approach to controlling unintentional diffusion. Diffusion depth of each front is controlled in proportion to Zn dosage, which is proposed as a value calculated as Zn concentration without regard to saturation limit. The diffusion depth for the growth time of 60 min increases in proportion to the Zn dosage as the slope of 0.16 m/10 18 cm Ϫ3 for the shallow front and that of 0.32 m/10 18 cm Ϫ3 for the deep front at a growth temperature of 600°C. The deep front expands two times faster than the shallow front, which is normally observed as a p-n junction. Zn concentration at which unintentional Zn diffusion occurs is determined to be more than 2 ϫ10 17 cm Ϫ3 . Therefore, the penetration of Zn atoms into the active region of semiconductor devices should be observed when unintentional diffusion takes place. Furthermore, even at low Zn concentration, the introduction of a kick-out mechanism is proposed to explain the diffusion coefficient of the unintentional diffusion.

show abstract

Section: Introductionmentioning

confidence: 97%

Control of double diffusion front unintentionally penetrated from a Zn doped InP layer during metalorganic vapor phase epitaxy

Otsuka

Kito

Ishino

et al. 1998

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Therefore, we use the value of (⌬x) 2 /t as a diffusion coefficient to compare our results with those of other authors. 42 We propose a reason why the diffusion coefficient (⌬x) 2 /t of Zn in MD-MQW is much lower than reported values. Diffusion coefficients have been reported to be almost in proportion to the square of Zn concentration C Zn in the doped region as shown by the equation in Fig.…”

Section: A Diffusion Coefficient Of Zn In Md-mqw Structurementioning

confidence: 54%

“…The small (⌬x) 2 /t value obtained in this study is one thousand times smaller than that of the previous reported value of 6.5ϫ10 Ϫ14 cm 2 /s for an InP layer in MOVPE growth. 42 Although the peak concentration of Zn is 4.2ϫ10 17 cm Ϫ3 , as shown in Fig. 2, the total amount of Zn of 3.5ϫ10 11 cm Ϫ2 in a period, which is calculated by accumulating the concentration between one bottom of a peak to the next in the profile, indicates that it is equivalent to Zn concentration of 1.2ϫ10 18 cm Ϫ3 in the doped region with a thickness of 3 nm.…”

Section: A Zn Profile In Md-mqw Structurementioning

confidence: 99%

“…The regrowth condition with low phosphorus pressure in LPE may introduce vacancies of group V atoms, which have been reported to enhance the diffusion of Zn. 32,42 Therefore, regrowth by MOVPE is employed to check the effect of phosphorus partial pressure on Zn diffusion because sufficient phosphorus partial pressure, as with the case of epitaxial growth, is supplied in the MOVPE regrowth. In a type C sample, a p-InP layer ͑dϭ2.4 m, C Zn ϭ1ϫ10 18 cm Ϫ3 ͒ is regrown on the MD-MQW structure by MOVPE for 90 min.…”

Section: B Dependence Of Regrowth On Md-mqw Structurementioning

confidence: 99%

“…[22][23][24][25] Furthermore, a small Zn diffusion coefficient of 6.5ϫ10 Ϫ14 cm 2 /s has been reported in the case of unin-tentional diffusion. 42 Therefore, it is important to clarify the conditions that are favorable for fabricating modulationdoping structures without degradation.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations