We have developed a new selective-growth process of InP on exactly (100)-oriented Si substrate in a conventional low-pressure metal-organic vapor-phase-epitaxy system. In this process, the InP epitaxial layer was deposited on a photolithographically patterned InP-buffer film without an additional dielectric mask during the growth. Under our experimental conditions, the InP growth has a very high selectivity and the InP epitaxial layer is antiphase-domain free. Experimental results show that the undesirable sidewall-growth interaction in conventional dielectric mask selective-growth processes is effectively suppressed. Spatially resolved photoluminescence displayed very high optical quality of patterned InP layers compared to those grown on blanket substrates.

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