Diffusion process for efficiency improvement with high sheet resistance on traditional production lines of solar cell

Jia, HeShun; Luo, Lei; Jiang, YanSen; Xu, Zhenhua; Xian-Kun, Ren; Chun-yan, Zhang

doi:10.1007/s11431-014-5520-6

Cited by 6 publications

(2 citation statements)

References 9 publications

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“…A compromise between cost reduction and efficiency improvement must be reached by using all semiconductor technology opportunities. This aim gives to the PV industry a better significance and competitiveness [8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Optimization of Phosphorus Emitter Formation from POCl3 Diffusion for p-Type Silicon Solar Cells Processing

Ghembaza

Zerga

Saïm

et al. 2016

Silicon

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International audienceThe main purpose of this work is to demonstrate the possibility of diffusion process perfection during silicon solar cells manufacturing by CFD simulation. Presently, the major community of PV industries uses a p-type silicon solar cell as the starting material. In this work too, boron doped silicon wafers are considered to form solar cells. Likewise, phosphorus oxy-chloride (POCl3) is used as a precursor for phosphorus diffusion. To do this, we evaluate the throughput of an industrial low-pressure diffusion tube furnace in order to realize uniform emitters. The low-pressure tube furnace is designed to obtain emitter standard sheet resistances of about 60 Ω/sq and wafer uniformity less than 3 %. An up-to-date control model using for the first time a CFD numerical code has been derived from some previous work, to achieve better wafer to wafer temperature distribution. Moreover, a numerical process was built using an Atlas-Silvaco® TCAD Simulation Package where we can demonstrate that the short circuit current density (Isc) increases from 4.97 to 6.53 mA/cm2 compared to the conventional photovoltaic process. This (Isc) enhancement can be attributed to the strong temperature effect on furnace atmosphere. Our result proves that we can target electrical properties of an emitter only by the manipulation and optimization of the doping profile. This process refinement is expected to contribute in the development of high efficiency conventional crystalline silicon solar cells considered for mass production

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Section: Introductionmentioning

confidence: 99%

Optimization of Phosphorus Emitter Formation from POCl3 Diffusion for p-Type Silicon Solar Cells Processing

Ghembaza

Zerga

Saïm

et al. 2016

Silicon

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“…By exploiting all the possibilities of semiconductor technology, it is necessary to find a compromise between cost reduction and efficiency increase. This goal increases the importance and competitiveness of the Photovoltaic (PV) industry [5][6][7]. Currently, the PV industry is constantly paying attention to new solar cell designs.…”

Section: Introductionmentioning

confidence: 99%

A Study on the Impact of PN-Junction Doping Concentration on the Efficiency of Monocrystalline Silicon Solar Cells

Elfiky,

Eliwa,

Zahran

et al. 2023

Sohag Engineering Journal

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The process of 𝑝𝑛 junction formation is one of the fundamental steps in the manufacturing process of solar cells. It is the most important factor influencing the efficiency of solar cells. The aim of this research is to investigate the effect of different 𝑝-type (different boron concentrations) and 𝑛 − type (different phosphorus concentrations) resistivity on the efficiency of monocrystalline silicon solar cells. The solar cells were fabricated using p-type silicon doped in boron at concentrations ranging from 6.61 × 10 15 to 3.03 × 10 16 cm −3 and 𝑛 − type silicon doped in phosphorous at concentrations ranging from 5 × 10 19 to 10 21 cm −3 . Then, the effect of boron and phosphorus concentration on solar cell efficiency was investigated. It is found that an increase in the concentration of boron or phosphorus results in an increase in the recombination rate and thus a decrease in the efficiency of the solar cell by reducing the short-circuit current (𝐼 𝑠𝑐 ). The best efficiency of 18.59 % was obtained by using boron doped silicon with a resistivity of 2.16 Ω. cm , corresponding to 6.61 × 10 15 cm −3 boron concentration and 𝑛 − type sheet resistance 43.5 Ω/□ , corresponding to 10 20 cm −3 phosphorus concentration. As the study was carried out on a range of resistivities values (0.54 Ω. cm 𝑡𝑜 2.16 Ω. cm) , a range of sheet resistance (10 Ω/□ to 77 Ω/□).

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Systematic optimization of phosphorous diffusion for solar cell application

Kermaniha

Kolahdouz

Manavizadeh

et al. 2016

J Mater Sci: Mater Electron

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Diffusion process for efficiency improvement with high sheet resistance on traditional production lines of solar cell

Cited by 6 publications

References 9 publications

Optimization of Phosphorus Emitter Formation from POCl3 Diffusion for p-Type Silicon Solar Cells Processing

Optimization of Phosphorus Emitter Formation from POCl3 Diffusion for p-Type Silicon Solar Cells Processing

A Study on the Impact of PN-Junction Doping Concentration on the Efficiency of Monocrystalline Silicon Solar Cells

Systematic optimization of phosphorous diffusion for solar cell application

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