2013
DOI: 10.1111/jace.12211
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Diffusion Properties of Tm3+ in Congruent LiNbO3 Crystal

Abstract: profiles, characteristic diffusion parameters such as diffusivity, diffusion constant, activation energy, solubility, solubility constant, and heat of solution were obtained and discussed in comparison with the case of Er 3+ diffusion. In comparison with Er 3+ diffusion, the Tm 3+ diffusion shows similar anisotropy and temperature dependence of solubility. In the aspect of diffusivity, under lower temperature the Tm 3+ has a lower diffusivity than the Er 3+ , and their diffusivity difference reduces with the i… Show more

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Cited by 9 publications
(20 citation statements)
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“…In parallel, our previous work has revealed that both n o and n e do not change with the bulk‐doped Er 3+ concentration (0–3.0 mol% in crystal) within the experiment error 1 × 10 −3 . Moreover, an independent study on Er 3+ diffusion‐doping into LN shows that the contribution is <1 × 10 −3 for n o and <1.7 × 10 −3 for n e for the considered Er 3+ concentration up to 1.4 mol%, and similar result was also obtained in the case of Tm 3+ diffusion‐doping . One may thus conclude in combination with the present result of Sc 3+ doping that the rare‐earth dopant has little contribution to the substrate index regardless of diffusion‐doping or crystal‐growth incorporation method.…”
Section: Resultssupporting
confidence: 79%
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“…In parallel, our previous work has revealed that both n o and n e do not change with the bulk‐doped Er 3+ concentration (0–3.0 mol% in crystal) within the experiment error 1 × 10 −3 . Moreover, an independent study on Er 3+ diffusion‐doping into LN shows that the contribution is <1 × 10 −3 for n o and <1.7 × 10 −3 for n e for the considered Er 3+ concentration up to 1.4 mol%, and similar result was also obtained in the case of Tm 3+ diffusion‐doping . One may thus conclude in combination with the present result of Sc 3+ doping that the rare‐earth dopant has little contribution to the substrate index regardless of diffusion‐doping or crystal‐growth incorporation method.…”
Section: Resultssupporting
confidence: 79%
“…Similar little contribution to the LN substrate index was also observed for other rare‐earth dopants such as Er 3+ , Yb 3+ , Tm 3+ , whether the ion is incorporated by homogeneous growth‐doping or inhomogeneous diffusion‐doping method. For the homogeneous growth‐doping case, Fedorov et al .…”
Section: Resultssupporting
confidence: 62%
“…By taking into account that a longer duration was adopted for a lower temperature while a shorter duration was adopted for a higher temperature (see Table 1), one may conclude that the higher the diffusion temperature, the more serious the Li 2 O out-diffusion, and Li 2 O out-diffusion depends on more the temperature than the duration. Similar result was also obtained for Er 3+ or Tm 3+ diffusion in LN [19,24].…”
Section: Er 3+ Doping Effect On Surface LI 2 O Contentsupporting
confidence: 87%
“…One can see that the Ti 4+ -induced index increment in LT is much larger than the contribution of Er 3+ dopant. Therefore, the Er 3+ doping contribution to the index increment in the Ti-diffused LT waveguide is minor in comparison with the Ti 4+ doping contribution and can be ignored (this is also the case for LN [19]). Similar small contribution of rare-earth doping to the substrate index was also observed for Er 3+ -or Tm 3+ -doped LN regardless of the incorporation method by either crystal growth [24,25] or diffusion [19,26].…”
Section: Contribution Of Er 3+ Dopant To Lt Refractive Indexmentioning
confidence: 99%
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