Diffusion-time-resolved ion-beam-induced charge collection from stripe-like test junctions induced by heavy-ion microbeams

Abstract

To design more radiation-tolerant Integrated Circuits (ICS), it is necessary to design and test accurate models of ionizing radiation induced charge collection dynamics with microcircuits.A new technique, Diffusion Time Resolved Ion Beam Induced Charge Collection (DTNBICC), is used to measure the average arrival time of the diffused charge, which can be related to the first moment (or the average time) of the arrival carrier density at the junction. Specially designed stripe-like test junctions are experimentally studied using a 12 MeV carbon microbeam with a spot size of-1 pm. The relative arrival time of ion-generated charge and the collected charge are measured using a multiple parameter data acquisition system. A 2-D device simulation code, MEDIC1, is used to calculate the charge collection dynamics on the stripe-like test junctions. The simulations compare very \vell with experimental microbeam measurements.The results show the importance of the diffused charge collection by junctions, which is 1

A review of ion beam induced charge microscopy

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Empirical approach to the description of spectral performance degradation of silicon photodiodes used as particle detectors

“…Somewhat similar to the Diffusion Time Resolved Ion Beam Induced Charge Collection (DTRIBICC) method [11], the distribution of the peaking time T p , the time between the onset and the maximum amplitude of the unipolar shaped pulses at the output of the linear amplifier, was measured. The delay, DT p , relative to an infinitely fast detector (or pulser) signal caused by nonzero charge collection time is the weighted sum of the drift and diffusion contributions, which -in linear approximation -can be expressed as the first moments of the corresponding current signals, i.e.…”

Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy

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