Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy

Abstract

e ion beam induced charge (IBIC) technique is a scanning microscopy technique which uses �nely focused MeV ion beams as probes to measure and image the transport properties of semiconductor materials and devices. Its success stems from the combination of three main factors: the �rst is strictly technical and lies in the availability of laboratories and expertise around the world to provide scanning MeV ion beams focused down to submicrometer spots. e second reason stems from the peculiarity of MeV ion interaction with matter, due to the ability to penetrate tens of micrometers with reduced scattering and to excite a high number of free carriers to produce a measurable charge pulse from each incident ion. Last, but not least, is the availability of a robust theoretical model able to extract from the measurements all the parameters for an exhaustive characterization of the semiconductor. is paper is focused on these two latter issues, which are examined by reviewing the current status of IBIC by a comprehensive survey of the theoretical model and remarkable examples of IBIC applications and of ancillary techniques to the study of advanced semiconductor materials and devices.

Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

“…Only samples with the lowest reverse current have been considered for our radiation hardness study. Additional care was taken during final sample selection by performing the scanning Ion Beam Induced Charge (IBIC) microscopy [23] in frontal mode (ion microbeam with a very low rate of up to 1000 cps is scanned perpendicular over a front metal contact) on each pre-selected sample to establish a good uniformity of charge collection efficiency (CCE) across the whole active SBD volume. Subsequent irradiation conditions meant to generate defects in 4H-SiC layer have been optimized for the direct single ion detection and on-line fluence monitoring by counting the number of pulses in each pixel of irradiated areas utilizing the IBIC technique.…”

Quantum Micro–Nano Devices Fabricated in Diamond by Femtosecond Laser and Ion Irradiation

“…This task can be performed either through the detection of secondary electrons produced by the impact of the impinging ions, or through the exploitation of the diamond substrate, equipped with suitable electrodes, as a solid‐state single‐ion detector . In this latter case, the detection relies on the measurement of the induced charge signal formed as a consequence of the motion of the electron–hole cloud generated by the ion energy loss in the material . Despite the large electron–hole pair energy creation of diamond (13.2 eV) in comparison to traditional detector materials, the approach has been successfully assessed for the room‐temperature single‐ion detection at energies as low as 200 keV .…”

“…[128,132] In this latter case, the detection relies on the measurement of the induced charge signal formed as a consequence of the motion of the electron-hole cloud generated by the ion energy loss in the material. [133] Despite the large electron-hole pair energy creation of diamond (13.2 eV) in comparison to traditional detector materials, the approach has been successfully assessed for the room-temperature single-ion detection at energies as low as 200 keV. [132] A further significant improvement in the sensitivity can be expected with the adoption of ion detection techniques at cryogenic temperatures and the development of high-sensitive, low-noise induced charge amplification chains.…”

Near-Surface Electrical Characterisation of Silicon Electronic Devices Using Focused keV Ions

“…The detector was subsequently placed inside the FIB, where a 12 keV 1 H + 2 beam was then scanned over a 25 × 25 µm 2 area inside the CS. Light ions are employed for the initial characterisation because they produce less sample damage and greater ionisation than heavier species for the same kinetic energy [30]. Each 1 H + 2 molecule ion dissociates quasi-instantaneously upon surface impact, due to the energy transfer exceeding the binding energy by several orders of magnitude [31].…”