Digital Alloy InAlAs Avalanche Photodiodes

Zheng, Jiyuan; Yuan, Yuan; Tan, Yaohua; Peng, Yiwei; Rockwell, Ann K.; Bank, Seth R.; Ghosh, Avik W.; Campbell, Joe C.

doi:10.1109/jlt.2018.2844114

Cited by 38 publications

(23 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To investigate the origin of lower k-value in a SL APD, AlAs/InAs SL (compositionally the same as Al 0.48 In 0.52 As RA) APDs were grown on an InP substrate. They achieved a lower k-value (k = 0.03) than an Al 0.48 In 0.52 As RA (k = 0.24) 18 . The origin was investigated in terms of electronic band structures of the SL and RA APDs.…”

mentioning

confidence: 79%

Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate

Lee

Winslow

Grein

et al. 2020

Sci Rep

View full text Add to dashboard Cite

We report on engineering impact ionization characteristics of In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes (InGaAs/AlInAs SL APDs) on InP substrate to design and demonstrate an APD with low k-value. We design InGaAs/AlInAs SL APDs with three different SL periods (4 ML, 6 ML, and 8 ML) to achieve the same composition as Al0.4Ga0.07In0.53As quaternary random alloy (RA). The simulated results of an RA and the three SLs predict that the SLs have lower k-values than the RA because the electrons can readily reach their threshold energy for impact ionization while the holes experience the multiple valence minibands scattering. The shorter period of SL shows the lower k-value. To support the theoretical prediction, the designed 6 ML and 8 ML SLs are experimentally demonstrated. The 8 ML SL shows k-value of 0.22, which is lower than the k-value of the RA. The 6 ML SL exhibits even lower k-value than the 8 ML SL, indicating that the shorter period of the SL, the lower k-value as predicted. This work is a theoretical modeling and experimental demonstration of engineering avalanche characteristics in InGaAs/AlInAs SLs and would assist one to design the SLs with improved performance for various SWIR APD application.

show abstract

mentioning

confidence: 79%

Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate

Lee

Winslow

Grein

et al. 2020

Sci Rep

View full text Add to dashboard Cite

show abstract

“…is the shot noise driven by the current, F is the excess noise factor of the photodetector, M is the gain [14], and i n = P N η det q/hω up is the current driven by the optical noise. Note, the noise photon is assumed to have the same angular frequency as the unconverted signal.…”

Section: B Noise Equivalent Power (Nep)mentioning

confidence: 99%

Characterization of the NEP of Mid-Infrared Upconversion Detectors

Pedersen

Høgstedt²,

Barh

et al. 2019

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

We present a scheme to estimate the noise equivalent power (NEP) of the frequency upconversion detectors (UCDs), detecting mid-infrared (MIR) light. The NEP of UCD is a combined contribution of NEPs from the upconversion process and from the photodetector, used for detecting the upconverted signal. The 2 − 5 µm MIR range is particularly investigated in this letter using a bulk periodically poled lithium niobate based CW-intracavity UCD. We measured the NEP of UCD as 20 fW/ √ Hz at MIR wavelength of 3.39 µm. We showed that the limiting factor here is not the noise from the upconversion process (estimated NEP is 2.3 fW/ √ Hz at 3.39 µm), but from the electrical noise in the photodetector itself. We also compared the performance of our UCD with previously published results and with market available direct MIR detectors. Additionally, we measured the optical noise of the UCD over its working spectral range (2.9 − 3.6 µm) and compared with numerical simulation.

show abstract

“…The carrier is considered to be in free flight between scattering events. The 3D based deformation scattering rate

P_{ν ν^{'}, η}^{def} ((),, k, {normalΩ}_{k \pm q})

from a point k in band v to a region

Ω_{{bold-italick}^{'}}

, in band v′ centered around k ′ can be derived from the Fermi Golden Rule and expressed as 9,10

P_{ν ν^{'}, η}^{def} ((),, k, {normalΩ}_{k \pm q}) = \frac{π}{ρ ω_{ηq}} {|{normalΔ}^{η} (ν^{'}, k, q, ν)|}^{2} {|I (ν, ν^{'}; k, k \pm q)|}^{2} D_{ν^{'}} ((),, E^{'}, {normalΩ}_{k^{'}}) ((), N_{ηq} + \frac{1}{2} \mp \frac{1}{2})

where ρ is the lattice density, q is the phonon wave vector of mode η , and Δ η ( ν ′ , k , q , ν ) is the deformation potential, which is taken to be 0.73 eV/Å in the conduction band and 0.21 eV/Å in the valence band for this calculation 13,14 . It should be noticed that the deformation potential value was taken from the value of InAlAs digital alloy as an approximation.…”

Section: Introductionmentioning

confidence: 99%

“…In our previous study, minigap in InAlAs digital alloy has been found to play an important role in influencing the ionization coefficient of holes. 13,14,19 The accelerating path of holes is blocked by minigap and hole energy is not enough to trigger ionizations. Thereafter, an extremely low k value has been realized in InAlAs digital alloy.…”

Section: Introductionmentioning

confidence: 99%

Full band Monte Carlo simulation of AlInAsSb digital alloys

Zheng

Ahmed

Yuan

et al. 2020

InfoMat

Self Cite

View full text Add to dashboard Cite

Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this article, we investigate the band structure‐related mechanisms that influence impact ionization. Band‐structures calculated using an empirical tight‐binding method and Monte Carlo simulations reveal that the mini‐gaps in the conduction band do not inhibit electron impact ionization. Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated.

show abstract

Digital Alloy InAlAs Avalanche Photodiodes

Cited by 38 publications

References 43 publications

Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate

Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate

Characterization of the NEP of Mid-Infrared Upconversion Detectors

Full band Monte Carlo simulation of AlInAsSb digital alloys

Contact Info

Product

Resources

About