Digital SiPM channel integrated in CMOS 65 nm with 17.5 ps FWHM single photon timing resolution

Nolet, F.; Dubois, Frédérik; Roy, N.; Parent, Samuel; Lemaire, William; Massie-Godon, Alexandre; Charlebois, Serge A.; Fontaine, R.; Pratte, J.‐F.

doi:10.1016/j.nima.2017.10.022

Cited by 25 publications

(19 citation statements)

References 7 publications

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“…The 1st tier contains SPAD arrays with TSVs for each microcell, the 2nd tier contains the quenching circuit arrays and the 3rd tier contains the advanced signal processing and readout functionalities. First results show a very promising time resolution of this concept integrated in 65 nm CMOS with measured SPTR values of 17.5 ps FWHM (Nolet et al 2018).…”

Section: The Digital Sipmmentioning

confidence: 90%

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The silicon photomultiplier: fundamentals and applications of a modern solid-state photon detector

2020

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The silicon photomultiplier (SiPM) is an established device of choice for a variety of applications, e.g. in time of flight positron emission tomography (TOF-PET), lifetime fluorescence spectroscopy, distance measurements in LIDAR applications, astrophysics, quantum-cryptography and related applications as well as in high energy physics (HEP).To fully utilize the exceptional performances of the SiPM, in particular its sensitivity down to single photon detection, the dynamic range and its intrinsically fast timing properties, a qualitative description and understanding of the main SiPM parameters and properties is necessary. These analyses consider the structure and the electrical model of a single photon avalanche diode (SPAD) and the integration in an array of SPADs, i.e. the SiPM. The discussion will include the front-end readout and the comparison between analog-SiPMs, where the array of SPADs is connected in parallel, and the digital SiPM, where each SPAD is read out and digitized by its own electronic channel.For several applications a further complete phenomenological view on SiPMs is necessary, defining several SiPM intrinsic parameters, i.e. gain fluctuation, afterpulsing, excess noise, dark count rate, prompt and delayed optical crosstalk, single photon time resolution (SPTR), photon detection effieciency (PDE) etc. These qualities of SiPMs influence directly and indirectly the time and energy resolution, for example in PET and HEP. This complete overview of all parameters allows one to draw solid conclusions on how best performances can be achieved for the various needs of the different applications.

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Section: The Digital Sipmmentioning

confidence: 90%

“…Therefore newer research on the digital SiPM is moving in the direction of 3D assembling of the detector (Bérubé et al 2015, Nolet et al 2018, Nolet et al 2020. In figure 17(b) an example of a 3D integration is shown, that the group from Sherbrooke is currently working on Bérubé et al (2015).…”

Section: The Digital Sipmmentioning

confidence: 99%

The silicon photomultiplier: fundamentals and applications of a modern solid-state photon detector

2020

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“…To conclude, high-frequency readout is one way to reach the limits in timing performance given by modern analog SiPMs, but most likely not the only way. On the other hand, the fully digital SiPM does not struggle with these limitations and will presumably be the best option to achieve the intrinsic timing limits in TOF-PET, given by photostatistics and the photodetector itself, if the detector can be successfully integrated in a scalable 3D design (Nolet et al 2018). .…”

Section: Discussing the Sipm Readoutmentioning

confidence: 99%

High-frequency SiPM readout advances measured coincidence time resolution limits in TOF-PET

et al. 2019

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Scintillator based radiation detectors readout by SiPMs successively break records in their reached time resolution. Nevertheless, new challenges in time of flight positron emission tomography (TOF-PET) and high energy physics are setting unmatched goals in the 10 ps range. Recently it was shown that high frequency (HF) readout of SiPMs significantly improves the measured single photon time resolution (SPTR), allowing to evaluate the intrinsic performance of large area devices; e.g. FBK NUV-HD SiPMs of 4 × 4 mm 2 area and 40 µm single photon avalanche diode (SPAD) size achieve 90 ps FWHM. In TOF-PET such readout allows to lower the leading edge detection threshold, so that the fastest photons produced in the crystal can be utilized. This is of utmost importance if a high SPTR and prompt Cherenkov light generated by the hot-recoil electron upon 511 keV photoabsorption should improve timing. This paper shows that high-frequency bipolar transistor readout of state-of-the-art SiPMs coupled to high-performance scintillators can substantially improve the best achievable coincidence time resolution (CTR) in TOF-PET. In this context a CTR of 158 ± 3 ps FWHM with 2 × 2 × 3 mm 3 BGO crystals coupled to FBK SiPMs is achieved. This faint Cherenkov signal is as well present in standard LSO scintillators, which together with low SPTR values (<90 ps FWHM) improves the CTR of 2 × 2 × 3 mm 3 LSO:Ce:Ca coupled to FBK NUV-HD 4 × 4 mm 2 with 25 µm SPAD size to 61 ± 2 ps FWHM using HF-electronics, as compared to 73 ± 2 ps when readout by the NINO front-end ASIC. When coupling the LSO:Ce:Ca crystals to FBK NUV-HD SiPMs of 4 × 4 mm 2 and 40 µm SPAD size, using HF-electronics, a CTR of even 58 ± 3 ps for 2 × 2 × 3 mm 3 and 98 ± 3 ps for 2 × 2 × 20 mm 3 is achieved. This new experimental data will allow to further discuss the timing limits in scintillator-based detectors.

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“…Since the pixel size is in the order of 50 × 50 µm 2 range and performance under 10 ps is mandatory for some of the aforementioned applications, every individual contribution in timing and size must be optimized. The TDC developed to be integrated in the pixel has a timing jitter of 6.9 ps rms [33] and the first results of a 2D pixel in CMOS 65 nm has a 17.5 ps FWHM SPTR [34]. To obtain a SPAD array with a 10 ps SPTR, the first step is to achieve a single SPAD and quenching circuit that can reach a SPTR of 10 ps.…”

Section: Introductionmentioning

confidence: 99%

Quenching Circuit and SPAD Integrated in CMOS 65 nm with 7.8 ps FWHM Single Photon Timing Resolution

et al. 2018

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This paper presents a new quenching circuit (QC) and single photon avalanche diode (SPAD) implemented in TSMC CMOS 65 nm technology. The QC was optimized for single photon timing resolution (SPTR) with a view to an implementation in a 3D digital SiPM. The presented QC has a timing jitter of 4 ps full width at half maximum (FWHM) and the SPAD and QC has a 7.8 ps FWHM SPTR. The QC adjustable threshold allows timing resolution optimization as well as SPAD excess voltage and rise time characterization. The adjustable threshold, hold-off and recharge are essential to optimize the performances of each SPAD. This paper also provides a better understanding of the different contributions to the SPTR. A study of the contribution of the SPAD excess voltage variation combined to the QC time propagation delay variation is presented. The proposed SPAD and QC eliminates the SPAD excess voltage contribution to the SPTR for excess voltage higher than 1 V due to its fixed time propagation delay.

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Digital SiPM channel integrated in CMOS 65 nm with 17.5 ps FWHM single photon timing resolution

Cited by 25 publications

References 7 publications

The silicon photomultiplier: fundamentals and applications of a modern solid-state photon detector

The silicon photomultiplier: fundamentals and applications of a modern solid-state photon detector

High-frequency SiPM readout advances measured coincidence time resolution limits in TOF-PET

Quenching Circuit and SPAD Integrated in CMOS 65 nm with 7.8 ps FWHM Single Photon Timing Resolution

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