Dilute Al-Mn Alloys for Low-Temperature Device Applications

Ruggiero, S. T.; Williams, A. J.; Rippard, William H.; Clark, Alan F.; Deiker, S.; Vale, Leila R.; Ullom, Joel N.

doi:10.1023/b:jolt.0000013212.61515.56

Cited by 19 publications

(14 citation statements)

References 26 publications

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“…10 Instead, we have developed a TES using Al doped with Mn. As we have previously reported, 11 Mn can drive the T c of Al to below 50 mK. This occurs for Mn concentrations in the ϳ3000 ppm regime, suggesting that AG pair breaking is not the principal agent, and rather that T c suppression in Al-Mn alloys is due to pair scattering from resonant impurity sites in the context of the FriedelAnderson model, 12 as quantified by the Kaiser theory.…”

supporting

confidence: 52%

Superconducting transition edge sensor using dilute AlMn alloys

Deiker

Doriese

Hilton

et al. 2004

Applied Physics Letters

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We have fabricated a bolometer using a transition-edge sensor (TES) made of Al doped with Mn to suppress the superconducting critical temperature (Tc) of Al from ∼1Kto∼100mK. The resulting detector exhibits low-frequency noise consistent with theory, with a noise-equivalent power of 7.5×10−18W∕√Hz. The addition of Mn impurities did not significantly increase the heat capacity of the TES. In addition, the detector is surprisingly insensitive to applied magnetic fields. The use of AlMn alloy films in arrays of TES detectors has advantages in simplicity of fabrication when compared to traditional bilayer fabrication techniques.

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supporting

confidence: 52%

Superconducting transition edge sensor using dilute AlMn alloys

Deiker

Doriese

Hilton

et al. 2004

Applied Physics Letters

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“…Clearly then, resonant scattering dominates the phenomenology. The rate of suppression of with Mn concentration is also consistent with resonant-scattering suppression as previously noted by our group [14], [15], and earlier studies [24].…”

Section: Discussionsupporting

confidence: 91%

“…As previously reported [14], [15] Al-Mn films were prepared by sputter deposition. The relative sputter rates from targets of pure Al and targets of either 3000 ppm or 5000 ppm Mn-doped Al were adjusted to achieve a final alloy of intermediate Mn concentration.…”

Section: Film Preparationmentioning

confidence: 99%

Dilute Al-Mn Alloys for Superconductor Tunneling and Other Devices

Ruggiero

Arnold

Williams

et al. 2005

IEEE Trans. Appl. Supercond.

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The authors present tunneling results for junctions comprising Mn doped Al films produced by sputter deposition, with Mn concentrations in the range of 0-5000 ppm. Our results for S I S , S I S, and N/I/S junctions demonstrate that Al-Mn alloys can serve both as superconductors with critical temperatures reduced from that of Al and as normal metals. The authors find Al-Mn in this doping range to be otherwise identical to pure Al in terms of its BCS-like tunnel characteristics (for superconductors) and its ability to produce high-quality tunnel barriers.

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“…2 Here, we present results on the effects of vacuum annealing on NIS junctions, concentrating on manganese-doped aluminum (Al:Mn) as the normal metal material of the NIS junctions. [33][34][35][36] We find that vacuum annealing at 400 • C improves the stability of the junctions, increases the tunneling resistance, and has no negative effects on the sub-gap current. The 1 / f resistance noise decreases in most cases, but, this effect is sensitive to the pre-annealing junction quality.…”

Section: Introductionmentioning

confidence: 65%

Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions

et al. 2016

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In this paper we report a study of the effect of vacuum annealing at 400°C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing treatment improves the stability of the junctions, increases their tunneling resistance and does not have a negative impact on the low-temperature current-voltage characteristics. The measured 1/f resistance noise of the junctions also changes after annealing, in the best case decreasing by over an order of magnitude. All these observations show that annealing is a viable route to improve NIS junction devices after the sample has been fabricated.

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Dilute Al-Mn Alloys for Low-Temperature Device Applications

Cited by 19 publications

References 26 publications

Superconducting transition edge sensor using dilute AlMn alloys

Superconducting transition edge sensor using dilute AlMn alloys

Dilute Al-Mn Alloys for Superconductor Tunneling and Other Devices

Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions

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