Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism

Kuang, Y. J.; Takabayashi, Ko; Sukrittanon, S.; Pan, Janet L.; Kamiya, Itaru; Tu, C. W.

doi:10.1063/1.4900960

Appl. Phys. Lett.

2014

DOI: 10.1063/1.4900960

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Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism

Y. J. Kuang

Ko Takabayashi

S. Sukrittanon

et al.

Abstract: Articles you may be interested inEnhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a "nucleation-augmented" method

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Cited by 3 publications

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Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs

Kuang

2015

Appl. Phys. A

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We have studied the Si doping efficiency in dilute nitride GaNAs by gas-source molecular beam epitaxy across a substrate temperature range from 460 to 570°C. Particularly, for samples grown at *480°C, the doping efficiency changes drastically from 100 to almost 0 % as the N compositions varies from 0 to 3.1 %. By comparing experimental data to Monte Carlo simulation of N adatom surface diffusion during growth, the change in doping efficiency is believed to be due to passivation of Si dopants by N during epitaxy.

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Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs

Kuang

2015

Appl. Phys. A

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Single crystalline nitrogen-doped InP nanowires for low-voltage field-effect transistors and photodetectors on rigid silicon and flexible mica substrates

et al. 2015

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Self-catalyzed Ga(N)AsP nanowires and GaAsP/GaNAsP core–shell nanowires grown on Si (111) by gas-source molecular beam epitaxy

La¹,

Pan

Bastiman

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors report epitaxial growth of dilute nitride GaNAsP nanowires (NWs) and GaAsP/GaNAsP core–shell nanowires on Si (111) by a self-catalyzed method. Different sizes of GaNAsP NWs were observed with various N content. Room-temperature photoluminescence (PL) is observed from the GaNAsP NWs. The spectral peak of the temperature-dependent PL shows an S-shape and indicates defect states in the bandgap. The room-temperature PL intensity increased after rapid thermal annealing. A growth model explains the observed diameters of GaAsP/GaNAsP core–shell.

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Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism

Abstract: Articles you may be interested inEnhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a "nucleation-augmented" method

Cited by 3 publications

References 24 publications

Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs

Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs

Single crystalline nitrogen-doped InP nanowires for low-voltage field-effect transistors and photodetectors on rigid silicon and flexible mica substrates

Self-catalyzed Ga(N)AsP nanowires and GaAsP/GaNAsP core–shell nanowires grown on Si (111) by gas-source molecular beam epitaxy

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