Dilute nitrides and 1.3 μm GaInNAs quantum well lasers on GaAs

Wang, S. M.; Zhao, Hongliang; Adolfsson, Göran; Wei, Yang; Zhao, Qing; Gustavsson, Johan S.; Sadeghi, Mahdad; Larsson, Anders

doi:10.1016/j.mejo.2008.06.013

Cited by 7 publications

(5 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this case, a majority of N species was incorporated at the growth front, enhancing the In−N bonding. The amount of incorporated N atoms is controlled by N exposure time and the As beam flux; see details in [13,14]. All the samples were grown on the (1 0 0) GaAs substrate using the MBE system with a loadlock radio frequency Nplasma source.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Contactless electroreflectance, photoluminescence and time-resolved photoluminescence of GaInNAs quantum wells obtained by the MBE method with N-irradiation

Baranowski

Kudrawiec

Syperek

et al. 2011

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The optical properties of GaInNAs quantum wells (QW) grown by molecular beam epitaxy with and without N-irradiation (i.e. grown by the classical method) were investigated by the contactless electroreflectance (CER), temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL). From CER measurements it was concluded that one type of nitrogen nearest-neighbor environment (In-rich environment) is dominant for GaInNAs QWs grown with N-irradiation whereas various nitrogen environments are present for the reference GaInNAs QW (i.e. the sample obtained by the classical method). PL and TRPL measurements clearly show that the optical properties of GaInNAs QWs are affected mainly by the amount of the incorporated nitride atoms. It was observed that the PL decay time decreased from ∼200 to ∼40 ps when the nitrogen concentration is increased from 0.8 to 2.2%. In addition, the presence of As flux during N-irradiation reduces the amount of the incorporated nitrogen and simultaneously improves the optical quality of GaInNAs QWs (i.e. it weakens the carrier localization at low temperatures and improves the quantum efficiency of PL).

show abstract

Section: Methodsmentioning

confidence: 99%

“…The aim of this work is to investigate the optical properties of GaInNAs quantum wells (QWs) that were grown by molecular beam epitaxy (MBE) with N-irradiation [13,14]. This method uses the indium segregation effect to increase the number of In−N bonds.…”

Section: Introductionmentioning

confidence: 99%

Contactless electroreflectance, photoluminescence and time-resolved photoluminescence of GaInNAs quantum wells obtained by the MBE method with N-irradiation

Baranowski

Kudrawiec

Syperek

et al. 2011

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The PL wavelength can be easily extended from 1.2 to 1.55 µm with an intensity reduction by about 10 times. By using GaNAs as barriers, we have demonstrated 1.71 µm light emission at room temperature 35. To our knowledge, this is the longest PL wavelength from GaInNAs QWs on GaAs at room temperature.…”

Section: Growth Of Dilute Nitridesmentioning

confidence: 99%

Growth of dilute nitrides and 1.3 µm edge emitting lasers on GaAs by MBE

Wang

Adolfsson

Zhao

et al. 2011

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mm lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mm at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mm GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 8C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.

show abstract

“…Tremendous efforts have been made to investigate the physicals properties of MQWs structures. Indeed, Wang et al have fabricated 1.3 mm GaInNAs/GaAs MQWs (up to four QWs) lasers with high quality and threshold current density as low as 940 A/cm 2 [27]. Besides, the results of Ludewig et al [28] showed that the band gap reduction in GaAsBi MQWs grown by MOVPE with Bi contents up to 4.2% is in the order of 82 meV/% Bi.…”

Section: Introductionmentioning

confidence: 99%