We demonstrate the 1.58μm emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250×50μm2 broad area laser, a minimum threshold current density of 490A∕cm2 was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55μm GaAs-based lasers.

In this paper, we present an optimized analysis algorithm for non-dispersive infrared (NDIR) to in situ monitor stack emissions. The proposed algorithm simultaneously compensates for nonlinear absorption and cross interference among different gases. We present a mathematical derivation for the measurement error caused by variations in interference coefficients when nonlinear absorption occurs. The proposed algorithm is derived from a classical one and uses interference functions to quantify cross interference. The interference functions vary proportionally with the nonlinear absorption. Thus, interference coefficients among different gases can be modeled by the interference functions whether gases are characterized by linear or nonlinear absorption. In this study, the simultaneous analysis of two components (CO₂ and CO) serves as an example for the validation of the proposed algorithm. The interference functions in this case can be obtained by least-squares fitting with third-order polynomials. Experiments show that the results of cross interference correction are improved significantly by utilizing the fitted interference functions when nonlinear absorptions occur. The dynamic measurement ranges of CO₂ and CO are improved by about a factor of 1.8 and 3.5, respectively. A commercial analyzer with high accuracy was used to validate the CO and CO₂ measurements derived from the NDIR analyzer prototype in which the new algorithm was embedded. The comparison of the two analyzers show that the prototype works well both within the linear and nonlinear ranges

A three-dimensional (3D) topological insulator (TI) is a unique quantum phase of matter with exotic physical properties and promising spintronic applications. However, surface spin current in a common 3D TI remains difficult to control and the out-of-plane spin texture is largely unexplored. Here, by means of surface spin photocurrent in Bi2Te3 TI devices driven by circular polarized light, we identify the subtle effect of the spin texture of the topological surface state including the hexagonal warping term on the surface current. By exploring the out-of-plane spin texture, we demonstrate spin injection from GaAs to TI and its significant contribution to the surface current, which can be manipulated by an external magnetic field. These discoveries pave the way to not only intriguing new physics but also enriched spin functionalities by integrating TI with conventional semiconductors, such that spin-enabled optoelectronic devices may be fabricated in such hybrid structures.