Dimensional Crossover in the Carrier Mobility of Two-Dimensional Semiconductors: The Case of InSe

Li, Wenbin; Poncé, Samuel; Giustino, Feliciano

doi:10.1021/acs.nanolett.8b04799

Cited by 90 publications

(95 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is due to the polar nature of monolayer InSe that causes a very strong long-range Fröhlich interaction, as discussed in Refs. [32] and [44].…”

Section: Scattering Ratesmentioning

confidence: 99%

“…This is due to the polar nature of monolayer InSe that causes a very strong long-range Fröhlich interaction, as discussed in Refs. [32,44]. In Figure 4, we show the calculated electron-phonon matrix elements at low-energy as a function of the angle between the initial and final wavevector around the Γ symmetry point for various phonon branches.…”

Section: Scattering Ratesmentioning

confidence: 99%

“…Recently, contradictory results have been presented on the calculated mobility in few-layer InSe. Li et al [32] have calculated the intrinsic electron mobility in monolayer, bilayer, and bulk β-InSe, reporting a mobility of 120 cm 2 V −1 s −1 in monolayers. The electron-phonon matrix elements were calculated using density functional theory (DFT) and the Boltzmann transport equation (BTE) and solved in the self-energy relaxation time approximation (SERTA) obtaining an electron mobility similar to the results we shall present below.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Monte Carlo Study of Electronic Transport in Monolayer InSe

et al. 2019

View full text Add to dashboard Cite

The absence of a band gap in graphene makes it of minor interest for field-effect transistors. Layered metal chalcogenides have shown great potential in device applications thanks to their wide bandgap and high carrier mobility. Interestingly, in the ever-growing library of two-dimensional (2D) materials, monolayer InSe appears as one of the new promising candidates, although still in the initial stage of theoretical studies. Here, we present a theoretical study of this material using density functional theory (DFT) to determine the electronic band structure as well as the phonon spectrum and electron-phonon matrix elements. The electron-phonon scattering rates are obtained using Fermi’s Golden Rule and are used in a full-band Monte Carlo computer program to solve the Boltzmann transport equation (BTE) to evaluate the intrinsic low-field mobility and velocity-field characteristic. The electron-phonon matrix elements, accounting for both long- and short-range interactions, are considered to study the contributions of different scattering mechanisms. Since monolayer InSe is a polar piezoelectric material, scattering with optical phonons is dominated by the long-range interaction with longitudinal optical (LO) phonons while scattering with acoustic phonons is dominated by piezoelectric scattering with the longitudinal (LA) branch at room temperature (T = 300 K) due to a lack of a center of inversion symmetry in monolayer InSe. The low-field electron mobility, calculated considering all electron-phonon interactions, is found to be 110 cm2V−1s−1, whereas values of 188 cm2V−1s−1 and 365 cm2V−1s−1 are obtained considering the long-range and short-range interactions separately. Therefore, the calculated electron mobility of monolayer InSe seems to be competitive with other previously studied 2D materials and the piezoelectric properties of monolayer InSe make it a suitable material for a wide range of applications in next generation nanoelectronics.

show abstract

“…This is due to the polar nature of monolayer InSe that causes a very strong long-range Fröhlich interaction, as discussed in Refs. [32] and [44].…”

Section: Scattering Ratesmentioning

confidence: 99%

Section: Scattering Ratesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Monte Carlo Study of Electronic Transport in Monolayer InSe

et al. 2019

View full text Add to dashboard Cite

show abstract

“…The linear I ds – V ds characteristics of InSe nanowire FET ( Figure a) suggest the formation of Ohmic contact. Schottky contact can be realized in thin InSe nanowire devices (Figure S6, Supporting Information), which may arise from the increased bandgap in the thinner nanowires . Furthermore, the transfer curves of InSe nanowire FET indicates that as‐synthesized InSe nanowires are typical n‐type semiconductors, similar to InSe flakes .…”

Section: Resultsmentioning

confidence: 99%

Edge‐Epitaxial Growth of InSe Nanowires toward High‐Performance Photodetectors

Hao

Yan

Wang

et al. 2019

Small

View full text Add to dashboard Cite

Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their unique geometries and physical properties. However, it is challenging to synthesize semiconducting nanowires directly on a SiO2/Si substrate due to lattice mismatch. Here, a catalysis‐free approach is developed to achieve direct synthesis of long and straight InSe nanowires on SiO2/Si substrates through edge‐homoepitaxial growth. Parallel InSe nanowires are achieved further on SiO2/Si substrates through controlling growth conditions. The underlying growth mechanism is attributed to a selenium self‐driven vapor–liquid–solid process, which is distinct from the conventional metal‐catalytic vapor–liquid–solid method widely used for growing Si and III–V nanowires. Furthermore, it is demonstrated that the as‐grown InSe nanowire‐based visible light photodetector simultaneously possesses an extraordinary photoresponsivity of 271 A W−1, ultrahigh detectivity of 1.57 × 1014 Jones, and a fast response speed of microsecond scale. The excellent performance of the photodetector indicates that as‐grown InSe nanowires are promising in future optoelectronic applications. More importantly, the proposed edge‐homoepitaxial approach may open up a novel avenue for direct synthesis of semiconducting nanowire arrays on SiO2/Si substrates.

show abstract

“…Therefore, the question of how the dimensionality influences the Fröhlich interaction in InSe has great significance and importance for both fundamental understanding and device application. Very recently, Ma et al 7 and Li et al 10 laid the theoretical ground for understanding the 2D model of Fröhlich potential and layer-dependent Fröhlich interaction in InSe by means of intrinsic carrier mobility. To the best of our knowledge, no experimental investigation of layer-dependent Fröhlich interaction in 2D semiconductors, in particular for InSe, has been reported until now.…”

Section: Introductionmentioning

confidence: 99%

Plasmonic Hot Electron Induced Layer Dependent Anomalous Fröhlich Interaction in InSe

Rahaman

Aslam

et al. 2021

Preprint

View full text Add to dashboard Cite

InSe is one of the most promising two-dimensional (2D) materials for electronic and optoelectronic applications because of its favourable bandgap and superior electron mobility compared to other layered semiconductors. However, due to the polar nature of InSe, Fröhlich interaction plays an important role in electrical transport, which becomes more significant in reduced dimensionality. Until now, it is not yet known how the dimensionality influences the strength and nature of the Fröhlich polaronic effect in InSe. Here, we report on layer dependent anomalous Fröhlich interaction in InSe from bulk to monolayer with the aid of plasmonic hot electron doping. When excited near the localized surface plasmon resonance, plasmonic nanostructures produce highly energetic electrons (known as hot electrons), which can be captured by a semiconductor such as InSe at the interface. These electrons then couple to the polar optical phonons via the Fröhlich interaction in InSe. With the aid of the strong plasmonic field, the Fröhlich interaction enabling us to monitor the polar phonons in conventional Raman measurements. We prepared nanostructures with three different metals (Ag, Au, and Al) using nanosphere lithography on InSe to study the hot electron doping effect by means of Raman spectroscopy. A finite element method simulation was used to understand the coupling between the plasmonic nanostructures and InSe. We observed that the intensity of polar LO phonon modes initially increases gradually with decreasing layer number and then drops drastically from 7L to 6L, i.e. at the thickness where the transition from quasi-direct to indirect bandgap occurs at room temperature. Additionally, a gradual decrease of intensity of the polar modes with decreasing layer thickness below this transition point is observed, which is due to the increasing indirect bandgap nature of InSe suggesting reduced Fröhlich coupling. Our results shed light on fundamental understanding of Fröhlich interaction in InSe, which is crucial for electronic and optoelectronic applications of this promising 2D material.

show abstract

Dimensional Crossover in the Carrier Mobility of Two-Dimensional Semiconductors: The Case of InSe

Cited by 90 publications

References 39 publications

Monte Carlo Study of Electronic Transport in Monolayer InSe

Monte Carlo Study of Electronic Transport in Monolayer InSe

Edge‐Epitaxial Growth of InSe Nanowires toward High‐Performance Photodetectors

Plasmonic Hot Electron Induced Layer Dependent Anomalous Fröhlich Interaction in InSe

Contact Info

Product

Resources

About