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Ashkinadze, B. M.; Linder, E.; Umansky, V.

doi:10.1103/physrevb.62.10310

Cited by 21 publications

(18 citation statements)

References 34 publications

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“…The proposed effect of the built-in electric field may explain the origin of the excitonic photoluminescence in Al x Ga 1−x As/GaAs heterostructures with quasi--triangular quantum wells at the heterointerface [4,31]. Similar conditions can be found in the investigated nitride heterostructure, and the excitonic luminescence can be discussed from the same point of view.…”

Section: Resultssupporting

confidence: 57%

Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

et al. 2011

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A study of the photoluminescence properties of AlInN/GaN in comparison with the spectrum of the GaN active layer of the same heterostructure is presented. The strong intensity lines of the observed photoluminescence spectra are associated with the formation, enhancement and narrowing of the excitonic lines in the flat band region of the active GaN layer. The phenomena in the presence of electric field near the heterostructure interface with the two-dimensional electron system are associated with nonlinear behaviour of recombination processes.

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Section: Resultssupporting

confidence: 57%

Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

et al. 2011

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“…Calculations indicate that the δ-doped structures induce electric field. For example, the effect of built-in electric field was used to explain the origin of the excitonic photoluminescence in selectively doped Al x Ga 1−x As/GaAs heterojunctions [10,11].…”

Section: Resultsmentioning

confidence: 99%

Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures

et al. 2011

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We present investigation of photoluminescence properties of Si δ-doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the δ-doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures.

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“…This can help explain the enhancement of excitonic line intensity in the n + /i-GaAs homojunction [19]. The effect of a built--in electric field has previously been proposed to explain the origin of excitonic photoluminescence in modulation--doped GaAs/Al x Ga 1−x As heterojunctions [20,21].…”

Section: A čErškus Et Almentioning

confidence: 99%

Enhancement of the Excitonic Photoluminescence in n⁺/i-GaAs by Controlling the Thickness and Impurity Concentration of the n⁺Layer

et al. 2011

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This communication presents the photoluminescence spectra of molecular beam epitaxially grown GaAs structures made from a 500 nm thick layer of intrinsic conductivity capped with a silicon doped layer with a film thickness ranging from 10 to 100 nm. Two different doping concentrations of the cap layer, NSi = 10 17 cmand NSi = 10 18 cm −3 , was considered. The results showed the excitonic line of i-GaAs layer enhancement. The intensity of excitonic line was about 160 times higher for the homojunction compared to the intrinsic conductivity epitaxial layer at liquid helium temperature. Possible mechanisms of the observed intensity enhancement in the n + /i-GaAs homojunction are discussed.

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Dimensional magnetoplasma resonance detected by free-exciton photoluminescence in modulation-dopedGaAs/AlxGa1−x<

Cited by 21 publications

References 34 publications

Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures

Enhancement of the Excitonic Photoluminescence in n⁺/i-GaAs by Controlling the Thickness and Impurity Concentration of the n⁺Layer

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Dimensional magnetoplasma resonance detected by free-exciton photoluminescence in modulation-dopedGaAs/AlxGa1−x<

Cited by 21 publications

References 34 publications

Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures

Enhancement of the Excitonic Photoluminescence in n+/i-GaAs by Controlling the Thickness and Impurity Concentration of the n+Layer

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Enhancement of the Excitonic Photoluminescence in n⁺/i-GaAs by Controlling the Thickness and Impurity Concentration of the n⁺Layer