Dimethyl Ketone Treatment of Cross-linked Poly(4-vinylphenol) Insulators for Pentacene Thin-film Transistors

Kwon, Jin-Hyuk; Bae, Jin‐Hyuk; Lee, Hyeonju; Park, Jaehoon

doi:10.3938/jkps.74.280

Cited by 4 publications

(1 citation statement)

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“…The pentacene thin films exhibited similar full width at half maximum (FWHM) values for the (001) peaks, approximately 0.191 ± 0.001 • . Since the XRD peak FWHM for organic films is associated with their crystallinity [24], the similar FWHM values suggest comparable crystallinity between the pentacene thin films. The pentacene thin films exhibited similar (001) interlayer spacing values, approximately 1.499 ± 0.001 nm, which were calculated by Bragg's Law (λ = 2d hkl sin(θ)) [25].…”

Section: Resultsmentioning

confidence: 90%

Hysteresis Reduction for Organic Thin Film Transistors with Multiple Stacked Functional Zirconia Polymeric Films

Kwon¹,

Choi²,

Bae³

et al. 2019

Crystals

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We show that transfer hysteresis for a pentacene thin film transistor (TFT) with a low-temperature solution-processed zirconia (ZrOx) gate insulator can be remarkably reduced by modifying the ZrOx surface with a thin layer of crosslinked poly(4-vinylphenol) (c-PVP). Pentacene TFTs with bare ZrOx and c-PVP stacked ZrOx gate insulators were fabricated, and their hysteresis behaviors compared. The different gate insulators exhibited no significant surface morphology or capacitance differences. The threshold voltage shift magnitude decreased by approximately 71% for the TFT with the c-PVP stacked ZrOx gate insulator compared with the bare ZrOx gate insulator, with 0.75 ± 0.05 and 0.22 ± 0.03 V threshold voltage shifts for the bare ZrOx and c-PVP stacked ZrOx gate insulators, respectively. The hysteresis reduction was attributed to effectively covering hysteresis-inducing charge trapping sites on ZrOx surfaces.

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Section: Resultsmentioning

confidence: 90%