Diode-pumped actively Q-switched Tm, Ho:GdVO_4/BaWO_4intracavity Raman laser at 2533 nm

Zhao, Jiupeng; Zhang, Xinlu; Guo, Xu Wei; Bao, Xiujuan; Li, Li; Cui, Jinhui

doi:10.1364/ol.38.001206

Cited by 30 publications

(11 citation statements)

References 25 publications

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“…The reasons for blue and green PL emissions of BaWO 4 are discussed in many different aspects ranging from defect centers by interstitial oxygen atoms to structural disorder in the crystal lattice [8][9][10][11]. BaWO 4 also serves as a potential material for designing all solid-state lasers, especially that it has been considered as a unique Raman crystal for a wide variety of pump pulse durations in Raman laser pulses [12][13][14][15][16][17]. Its other applications include nuclear spin optical hole burning hosts [6], radiation detection [1], scintillating devices [4], and other electro-optic applications [1].…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Characterization, and Low Temperature Sintering of Nanostructured BaWO₄for Optical and LTCC Applications

Vidya¹,

Solomon²,

Thomas³

2013

Advances in Condensed Matter Physics

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Synthesis of nano-BaWO4by a modified combustion technique and its suitability for various applications are reported. The structure and phase purity of the sample analyzed by X-ray diffraction, Fourier transform Raman, and infrared spectroscopy show that the sample is phase pure with tetragonal structure. The particle size from the transmission electron microscopy is 22 nm. The basic optical properties and optical constants of the nano BaWO4are studied using UV-visible absorption spectroscopy which showed that the material is a wide band gap semiconductor with band gap of 4.1 eV. The sample shows poor transmittance in ultraviolet region while maximum in visible-near infrared regions. The photoluminescence spectra show intense emission in blue region. The sample is sintered at low temperature of 810°C, without any sintering aid. Surface morphology of the sample is analyzed by scanning electron microscopy. The dielectric constant and loss factor measured at 5 MHz are 9 and1.56×10-3. The temperature coefficient of dielectric constant is −22 ppm/°C. The experimental results obtained in the present work claim the potential use of nano BaWO4as UV filters, transparent films for window layers on solar cells, antireflection coatings, scintillators, detectors, and for LTCC applications.

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Section: Introductionmentioning

confidence: 99%

Synthesis, Characterization, and Low Temperature Sintering of Nanostructured BaWO₄for Optical and LTCC Applications

Vidya¹,

Solomon²,

Thomas³

2013

Advances in Condensed Matter Physics

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“…information about the obtained output energy. Since 2013, several studies have demonstrated crystalline Raman lasers in the 2 to 4 μm region: A BaWO 4 crystal pumped by a Tm:YAP laser emitting at 2360 nm achieved 0.31 mJ of output energy [19], a YVO 4 crystal pumped by a Tm:YAP laser emitting at 2418 nm yielded 0.27 mJ of output energy [20], a BaWO 4 crystal pumped by a Tm,Ho:GdVO 4 laser emitting at 2533 nm obtained 0.31 mJ of output energy [21,22], a BaWO 4 crystal pumped by a Ho:YAG laser emitting at 2602 nm yielded 0.27 mJ of output energy [23], and a diamond crystal pumped by a tunable OPO around 2.4 µm, emitting from 3.38 to 3.80 μm attained up to 0.12 mJ of output energy [24]. The highest conversion efficiency of these lasers was 13.9% (6.8% efficiency from pump diode, for intracavity lasers).…”

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confidence: 99%

Two-wavelength Tm:YLF/KGW external-cavity Raman laser at 2197 nm and 2263 nm

Sheintop¹,

Sebbag²,

Komm³

et al. 2019

Opt. Express

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This paper presents a KGW Raman laser with an external-cavity configuration at the 2 µm region. The Raman laser is pumped by an actively Q-switched Tm:YLF laser, especially designed for this purpose emitting at 1880 nm. Due to the KGW bi-axial properties, the Raman laser is able to lase separately at two different output lines, 2197 nm and 2263 nm. The output energies and pulse durations that were achieved for these two lines are 0.15 mJ/pulse at 21 ns and 0.4 mJ/pulse at 5.4 ns, respectively. To the best of our knowledge, this is the first time that the KGW crystal, which is well known for its wide use in shorter wavelengths, is demonstrated in a Raman laser in the 2 µm region. According to the achieved results and due to the KGW properties, it appears to be a suitable crystal for energy scaling and efficient Raman conversion in this spectral range. An estimation of the Raman gain coefficient for this wavelength is provided as well. IntroductionIn the past few years, there has been a growing demand for high-power lasers emitting at wavelength beyond 2 μm. Lasers at these "retina-safe" wavelengths have several potential applications, including LIDAR, biomedicine [1], polymer material processing [2], defense applications, and gas sensing [3]. Therefore, 2 µm (SWIR) coherent sources have drawn much attention, as is evident from the recent efforts to develop high power lasers that cover this spectral range [3][4][5].Within this context, solid-state Raman lasers lend themselves to an interesting approach. They are efficient and useful high-brightness sources that extend the spectral span of existing lasers and fill the spectral gaps between them [6-9]. Compared to OPO, Raman lasers have advantages such as narrow linewidth, avoid of phase matching constraints, pulse length shortening and beam quality improvement through Raman beam cleanup [10]. However, solid-state Raman lasers are mostly implemented in the visible and ~1 µm regions and only rarely in the SWIR region. The reasons for this are two fold, first because the stimulated-Raman-scattering (SRS) gain coefficient drops theoretically approximately according to inverse wavelength, resulting in lower efficiency compared to NIR Raman lasers [6]. The second reason is the lack of suitable high power pump lasers that have sufficient gain over the Raman stimulated threshold. Recent developments in high-power pulsed Tm-doped and Hodoped solid-state lasers in the 2 µm region [5,[11][12][13][14] expands the availability of pump sources that can be used for efficient Raman laser conversion in this spectral range. Those lasers can be designed to have high peak power, linear polarization and narrow bandwidth, characteristics which are often required to match the Raman gain properties [6,8,15,16].The first demonstrations of SRS conversion in 2 µm using Tm:KY(WO 4 ) 2 and BaWO 4 crystals were reported more than a decade ago [17,18]. However, these reports lack

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“…Most molecular-ion crystals and silicate fibres traditionally used in the visible and near-infrared have strong absorption beyond 3 μm. Barium tungstate is one of the more promising molecular-ion crystals with SRS reported out to 3.7 μm [3] and an intracavity Raman laser demonstrated at 2.55 μm [4]. For low peak power applications optical fibres drawn from chalcogenide glasses instead of silica show promise for long wavelength generation, as shown by the recent demonstration of a 3.77 μm Raman fibre laser [5].…”

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confidence: 99%

Diamond Raman laser with continuously tunable output from 338 to 380 μm

2014

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We report a pulsed mid-infrared diamond Raman laser with output tuned from 3.38 to 3.80 μm through varying the optical parametric oscillator (OPO) pump wavelength. To our knowledge this is the longest reported wavelength from a solid-state Raman laser. We generated up to 80 μJ with good beam quality and 22% quantum conversion efficiency. Whilst the conversion process itself is efficient, approximately 40% of the generated Stokes light is lost to multiphonon absorption. By introducing a secondary pump beam at the anti-Stokes wavelength to initiate a seed at the Stokes wavelength through Raman resonant four-wave mixing, the laser threshold was reduced by approximately half, and the maximum output increased by 44% to 115 μJ.

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Diode-pumped actively Q-switched Tm, Ho:GdVO_4/BaWO_4intracavity Raman laser at 2533 nm

Cited by 30 publications

References 25 publications

Synthesis, Characterization, and Low Temperature Sintering of Nanostructured BaWO₄for Optical and LTCC Applications

Synthesis, Characterization, and Low Temperature Sintering of Nanostructured BaWO₄for Optical and LTCC Applications

Two-wavelength Tm:YLF/KGW external-cavity Raman laser at 2197 nm and 2263 nm

Diamond Raman laser with continuously tunable output from 338 to 380 μm

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Diode-pumped actively Q-switched Tm, Ho:GdVO_4/BaWO_4intracavity Raman laser at 2533 nm

Cited by 30 publications

References 25 publications

Synthesis, Characterization, and Low Temperature Sintering of Nanostructured BaWO4for Optical and LTCC Applications

Synthesis, Characterization, and Low Temperature Sintering of Nanostructured BaWO4for Optical and LTCC Applications

Two-wavelength Tm:YLF/KGW external-cavity Raman laser at 2197 nm and 2263 nm

Diamond Raman laser with continuously tunable output from 338 to 380 μm

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Product

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Synthesis, Characterization, and Low Temperature Sintering of Nanostructured BaWO₄for Optical and LTCC Applications

Synthesis, Characterization, and Low Temperature Sintering of Nanostructured BaWO₄for Optical and LTCC Applications