Diode Pumped Single Frequency Erbium Lasers at 1.55 μm and 1.64 μm

High-power single-mode 915-nm, InAlGaAs quantum-well lasers grown by MOCVD

“…From equation (1), the power per unit length of emission aperture (P MAX /W) is proportional to L z /Γ QW and P COD . From equation (2), the output power increases as the slope efficiency increases and the threshold current decrease. P max is a function of temperature since η s and I th are temperature dependent.…”

“…In designing a high-power laser, the temperature characteristics, slope efficiency, thermal dissipation and far-field pattern must be optimized. Fundamentally, the maximum output-power is expressed as, Optical confinement factor in QW Waveguide thickness (nm) Figure 1 The Schematic diagram of GRINSCH Structure Figure 2 The dependence of optical confinement Near-field distribution and doping profile factor in QW on waveguide thickness T T T I I T T T T I I T P j h th j h s th s η η (2) Where P COD is the power density at catastrophic optical-damage (COD). W, L z , and Γ QW are laser emitting aperture, thickness of the quantum well and optical-confinement factor in the quantum well.…”

“…High-power laser-diodes emitting at ~915 nm are of great interest as optical pumps for Yb-doped or Yb/Er-doped fiber lasers and amplifiers [1,2,3,4,5,6]. In general, a cladding-pump configuration involving multi-mode laser-diodes is used due to the lack of high-power, single spatial-mode, laser-diodes.…”