2018
DOI: 10.1016/j.jtice.2018.09.003
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Dip-coating synthesis of P-doped BiVO4 photoanodes with enhanced photoelectrochemical performance

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Cited by 36 publications
(19 citation statements)
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“…The magnified patterns of ( 121) and (040) peaks in Figure 2(b) exhibited much more obvious shifts toward lower angles for BVP-1 and Ag/BVP (2%). This phonomenon may due to the change in the local crystal structures caused by P-doping, which as well as indicated that some amount of V 5+ has been well substituted by P 5+ without formation of any segregated impurities in the host BVO lattice [19,32,47,53]. The diffraction peaks of Ag in The morphologies of BVO and Ag/BVP (2%) were observed by SEM in Figure 3 (a, b), respectively.…”
Section: Morphology and Microstructure Of Ag/bvp Sheetsmentioning
confidence: 98%
See 1 more Smart Citation
“…The magnified patterns of ( 121) and (040) peaks in Figure 2(b) exhibited much more obvious shifts toward lower angles for BVP-1 and Ag/BVP (2%). This phonomenon may due to the change in the local crystal structures caused by P-doping, which as well as indicated that some amount of V 5+ has been well substituted by P 5+ without formation of any segregated impurities in the host BVO lattice [19,32,47,53]. The diffraction peaks of Ag in The morphologies of BVO and Ag/BVP (2%) were observed by SEM in Figure 3 (a, b), respectively.…”
Section: Morphology and Microstructure Of Ag/bvp Sheetsmentioning
confidence: 98%
“…In detail, some computational studies revealed that P doping could stabilize O vacancy structures by forming a defect complex, leading to higher concentrations of O vacancy. Subsequently, more O vacancies improved reducibility of the photocatalyst, which, in turn, increased the amount of charge carriers and increased the electronic conductivity, which could lead to superior photocatalytic activity [19,30,32,47]. Other reports argued about the locations of O vancancy determining their functions [10,29,31] In order to to illustrate the effect of Ag, the MB degradation rate of Ag/BVP (2%) was futher tested under two different wavelenghths of LED lamps (600 and 480 nm, respectively).…”
Section: Photocatalytic Performance and Mechanismmentioning
confidence: 99%
“…Element doping is an important strategy for enhancing the PEC efficiency of BiVO 4 photoanode. [5][6][7][8] Among many doping elements, tungsten (W) belongs to VIA element, and its outer orbit is more inclined to 5d 4 6s 2 , while the d orbit can be considered as unfilled state. Therefore, it can be speculated that the conductivity of BiVO 4 may be improved after W-doping, which further benefits for the carriers' mobility and separation.…”
Section: Introductionmentioning
confidence: 99%
“…BiVO 4 takes many advantages, such as narrow band gap, visible light responding ability, and so forth, but its no‐negligible limitation causes the low mobility and separation of photogenerated carries. Element doping is an important strategy for enhancing the PEC efficiency of BiVO 4 photoanode 5‐8 . Among many doping elements, tungsten (W) belongs to VIA element, and its outer orbit is more inclined to 5d 4 6s 2 , while the d orbit can be considered as unfilled state.…”
Section: Introductionmentioning
confidence: 99%
“…4a) correspond to Bi 4f 7/2 and Bi 4f 5/2 , respectively. 34 The primary peaks of V 2p at 516.5 and 524.1 eV are typically assigned to the V 2p 3/2 and V 2p 5/2 of V 5+ (Fig. 4b).…”
mentioning
confidence: 98%