2010
DOI: 10.1016/j.jmmm.2010.02.011
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Direct and inverse measurement of thin films magnetostriction

Abstract: Two techniques of measurements of thin film magnetostriction are compared: direct, when changes of the substrate curvature caused by the film magnetization are controlled, and inverse ("indirect"), when the modification of the magnetic anisotropy induced by the substrate deformation (usually bending) is measured. We demonstrate how both the elastic strength of the substrate and the effective magneto-mechanical coupling between the substrate deformation and magnetic anisotropy of the film depend on different co… Show more

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Cited by 16 publications
(10 citation statements)
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“…In the case of a single-crystal oriented such as [110] x In thin films, magnetostriction deformations are hindered by the much thicker substrate. In our experiment we measure the bending angle θ(H) of the cantilever tip when magnetic field is cycled from H max to −H max and back to H max with H max > H sat where H sat is the saturation field when magnetization reaches its saturation value 26 . The bending angles θ(H) are converted to stress using the well-known formula 41 :…”
Section: Magnetostrictionmentioning
confidence: 99%
“…In the case of a single-crystal oriented such as [110] x In thin films, magnetostriction deformations are hindered by the much thicker substrate. In our experiment we measure the bending angle θ(H) of the cantilever tip when magnetic field is cycled from H max to −H max and back to H max with H max > H sat where H sat is the saturation field when magnetization reaches its saturation value 26 . The bending angles θ(H) are converted to stress using the well-known formula 41 :…”
Section: Magnetostrictionmentioning
confidence: 99%
“…Magnetostriction is one of the most important magnetoelastic characteristics of soft magnetic materials, strongly related with the domain structure and the magnetization process. In the case of thin films, accurate measuring of saturation magnetostriction value is very difficult due to the elastic interaction between the film and the substrate [9]. One of the most common methods for measuring λ s in magnetostrictive thin films is the cantilever deflection method [10].…”
Section: Introductionmentioning
confidence: 99%
“…where Y s , ν s , and t s are the Young modulus, Poisson ratio, and thickness of the substrate and t f is the film thickness [24][25][26]. Young's modulus and Poisson's ratio in silicon are dependent on the orientation of the stress relative to the crystal axes of the sample.…”
Section: Methodsmentioning
confidence: 99%