Direct Bonding

Takagi, Hideki

doi:10.1002/9783527823239.ch12

Cited by 3 publications

(8 citation statements)

References 32 publications

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“…We investigate a novel approach for assembling high-Z particle pixel detectors based on a low-temperature covalent wafer-wafer bonding process. Low temperature covalent wafer-wafer bonding is routinely utilized in the production of micro-electromechanical systems (MEMS) to encapsulate structures [4], as well as in the production of high efficiency solar cells [5]. This bonding process enables the fusion of semiconductor materials without any additional material at the interface.…”

Section: Jinst 17 C10015mentioning

confidence: 99%

On the depletion behaviour of low-temperature covalently bonded silicon sensor diodes

Wüthrich

Rubbia

2022

J. Inst.

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Low temperature covalent direct wafer-wafer bonding allows for the fusion of multiple semiconductor wafers without any additional material at the bonding interface. In the context of particle pixel detectors this might provide an alternative to bump-bonding for joining sensors to readout chips. Previous investigations have shown that the amorphous layer formed at the interface during bonding is detrimental to charge propagation. To investigate the influence of the bonding interface on signal collection we have fabricated custom test structures by bonding high-resistivity N to high-resistivity P-type silicon wafers thus forming P-N junctions. Scanning transmission electron microscopy shows indeed the formation of ca. 3 nm wide amorphous layer at the interface. Using a scanning transient current technique (TCT) setup we were able to record generated signals. Illuminating our sample with light of different wavelengths and from different sides, indicates that the P side of the bonded structures can be fully depleted, but not the N side. This indicates a strongly asymmetric depletion behaviour which we attribute to the presence of the bonding interface.

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Section: Jinst 17 C10015mentioning

confidence: 99%

On the depletion behaviour of low-temperature covalently bonded silicon sensor diodes

Wüthrich

Rubbia

2022

J. Inst.

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show abstract

“…We investigate a novel approach for assembling high-Z particle pixel detectors based on a lowtemperature covalent wafer-wafer bonding process. Low temperature covalent wafer-wafer bonding is routinely utilized in the production of micro-electromechanical systems (MEMS) to encapsulate structures [4], as well as in the production of high efficiency solar cells [5]. This bonding process enables the fusion of semiconductor materials without any additional material at the interface.…”

Section: Introductionmentioning

confidence: 99%

“…The covalent bonding process is based on the principle of spontaneous covalent bonding between two wafers with dangling bonds at their surface [6]. The bonding process involves the following steps, which are all carried out under ultra-high vacuum (𝑝 < 10 −8 mbar): both wafers are introduced into the vacuum and the surface of the first wafer is sputter-cleaned via either an argon beam or an argon plasma [4] [7]. The sputter-cleaning removes any contaminants at the surface of the wafer as well as the thin native oxide layer formed on top of the silicon crystal.…”

Section: Introductionmentioning

confidence: 99%

“…The activated surface of both wafers are then brought in contact. Given that the entire process is carried out in ultra-high vacuum, very While argon is the most commonly used gas for surface activated bonding, the use of different noble gases such as neon has also been explored [4]. little to no re-oxidation of the activated surfaces can occur.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore the activated bonds at the two surfaces spontaneously bond under moderate pressure. The resulting wafer-wafer bond is oxidefree and the mechanical bond strength approaches or equals the semiconductor bulk strength [4].…”

Section: Introductionmentioning

confidence: 99%

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On the depletion behaviour of low-temperature covalently bonded silicon sensor diodes

Wüthrich¹,

Rubbia²

2022

Preprint

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A: Low temperature covalent direct wafer-wafer bonding allows for the fusion of multiple semiconductor wafers without any additional material at the bonding interface. In the context of particle pixel detectors this might provide an alternative to bump-bonding for joining sensors to readout chips. Previous investigations have shown that the amorphous layer formed at the interface during bonding is detrimental to charge propagation. To investigate the influence of the bonding interface on signal collection we have fabricated custom test structures by bonding high-resistivity N to high-resistivity P-type silicon wafers thus forming P-N junctions. Scanning transmission electron microscopy shows indeed the formation of ca. 3nm wide amorphous layer at the interface. Using a scanning transient current technique (TCT) setup we were able to record generated signals.Illuminating our sample with light of different wavelengths and from different sides, indicates that the P side of the bonded structures can be fully depleted, but not the N side. This indicates a strongly asymmetric depletion behaviour which we attribute to the presence of the bonding interface.

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Investigation of Cu-Sn-Cu transient liquid phase bonding for microsystems packaging

Pawar

Harsha

Dixit

2022

Materials and Manufacturing Processes

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Direct Bonding

Cited by 3 publications

References 32 publications

On the depletion behaviour of low-temperature covalently bonded silicon sensor diodes

On the depletion behaviour of low-temperature covalently bonded silicon sensor diodes

On the depletion behaviour of low-temperature covalently bonded silicon sensor diodes

Investigation of Cu-Sn-Cu transient liquid phase bonding for microsystems packaging

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